A careful engineering of the central metal coordination spheres provides adducts with excellent properties for application as precursors in vapor phase and solution processes. The family of precursors under study concerns the fluorinated metal-organic β-diketonates of alkaline, alkaline-earth and rare-earth metals adducted with a polyether, with general formula M(hfa)n·L (M = Ca, Na, Y, Yb, Er, Tm; Hhfa = 1,1,1,5,5,5 hexafluoroacetylacetone, L = diglyme or tetraglyme). Mass transport properties, such as volatility and thermal stability, of these adducts have been deeply analyzed through thermogravimetric analysis and differential scanning calorimetric measurements. These properties are rationalized in relation to the metal coordination sphere in the precursors and their applications. In particular, the precursors under focus have been applied to metal organic chemical vapor deposition and a combined sol–gel/spin-coating approach. Both methods allow us to obtain selectively and reproducibly CaF2 and NaYF4 phases with several combinations of lanthanide doping ions, using a proper mixture of fluorinated precursors. A careful optimization of both synthetic strategies is the key point for the production of different lanthanide-doped binary and multicomponent fluoride films, i.e., CaF2:Yb3+,Er3+; CaF2:Yb3+,Tm3+; CaF2:Yb3+,Er3+,Tm3+ and NaYF4:Yb3+,Er3+; NaYF4:Yb3+,Tm3+, with suitable morphologies, compositions and crystalline structures. The films show very promising upconversion properties, thus pointing to their appealing applications in photovoltaic systems and white light emission devices.

Zinc oxide (ZnO) layers and nanowires were grown by chemical vapor deposition (CVD) using methane (CH4) as reducing agent. Compared to conventional CVD processes, which commonly use graphite powder to reduce the ZnO powder source material, this low-cost method allows an improved controllability of the growth processes. Specifically, the consumption of the source material–a commercially available ZnO powder–can be controlled in a very precise way by varying the flow of the reducing CH4 or the re-oxidizing O2. Using this parameter, the growth can be switched between ZnO layers and nanostructures. High-quality ZnO layers have been grown on gallium nitride (GaN) substrates and on c-plane sapphire with an intermediate aluminum nitride (AlN) nucleation layer. By adjusting the growth conditions accordingly, ZnO nanowires were also grown with this method catalyst-free using a- and c-plane sapphire with ZnO nucleation layer as a substrate. The optical properties of the nanowires were investigated by low-temperature photoluminescence (PL) and compared to samples grown by conventional carbo-thermal CVD.

Layered molybdenum disulfide (MoS2) has attracted great attention owing to its unique properties. However, synthesizing large area thin film with high crystal quality and uniformity remains a challenge. The present study explores large scale MoS2 growth methods, i.e., two-step method of sputtering-chemical vapor deposition and direct sputtering method, and applies them to fabricate field effect transistors and supercapacitors, respectively. The thickness modulated MoS2 films by two-step method exhibited high field effect mobility [∼12.24 cm2/(V s)] and current on/off ratio (∼106). The direct sputtering of MoS2 demonstrated excellent electrochemical performance with a high capacitance (∼30 mF/cm2) and cyclic stability upto 5000 cycles. Our growth methods reported here for the large scale MoS2 with high uniformity can trigger the development of several important technologies in two-dimensional materials.

Metamorphic epitaxy offers the possibility of growing devices on wafers composed of different materials that might be larger than the native bulk substrates for a potential cost-reduction of III–V components; this is especially important when native substrates with desired lattice constants are not available. This article reviews the concepts of metamorphic epitaxy of III–V compound semiconductor materials and examines how they have been applied to the development of advanced transistor devices. These metamorphic devices are expected to be a key enabler of future heterogeneous integrated circuits in which Si and III–V devices are monolithically integrated on a wafer scale using complementary metal oxide semiconductor-like process flows.

Layered transition metal dichalcogenides which are part of the two dimensional materials family are experiencing rapidly growing interest owing to their diverse physical and optoelectronic properties. Large area controllable synthesis of these materials is required for transition from lab scale research to practical applications. In this work, we present a single step chemical vapor deposition process for large area monolayer growth of molybdenum selenide (MoSe2). We also demonstrate controllable thermal conversion from molybdenum selenide to molybdenum sulfide.

2D materials play a special role in the race to make smaller and smaller devices. Their unique and strong in-plane bonding makes them impervious to diffusion into other layers and provides excellent thickness control. Their van der Waal's bonding with other monolayers or substrates allows for heterostructures unattainable by any other technique. This is reflected by the abundant popularity of research into graphene and other 2D materials. In this review article, we will describe the out-of-plane properties of graphene and functionalized graphene. We will use three specific examples to illustrate how these out-of-plane properties can be used in spintronic devices, in section “Graphene as a Tunnel Barrier” we will describe a magnetic tunnel junction (MTJ) based on graphene. Section “Graphene Based MTJs” will describe the spin injecting properties of a graphene tunnel barrier on silicon. Section “Graphene in Semiconductor Spintronic Devices” describes how you can use functionalized graphene to make a homoepitaxial graphene device. The second part of this article reviews monolayer transition-metal dichalcogenides (TMDs). First, we will show how TMDs are grown and specifically how we can grow large-area TMDs by chemical vapor deposition. Secondly, we will describe the optical properties of several TMDs and compare the results from several authors. Finally, we choose a chemical sensor as a specific example to show how TMDs can be used in a device.

We have developed a new synthesis method that includes a chemical vapor deposition process in a chamber settled in organic liquid, and applied its nonequilibrium reaction field to the development of novel carbon nanomaterials. In the synthesis at 1110–1120 K, using graphene oxide as a catalyst support, iron acetate and cobalt acetate as catalyst precursors, and 2-propanol as a carbon source as well as the organic liquid, we succeeded to create carbon nanofiber composed of novel pot-shaped units, named carbon nanopot. A carbon nanopot has a complex and regular nanostructure consisting of several parts made of different layer numbers of graphene and a deep hollow space. Dense graphene edges, hydroxylated presumably, are localized around its closed end. The typical size of a carbon nanopot was 20–40 nm in outer diameter, 5–30 nm in inner diameter, and 100–200 nm in length. A growth model of carbon nanopot and its applications are proposed.

Efficient structural design and thermal management for aerospace structures demand next-generation lightweight thermally conductive and mechanically robust materials to withstand high-velocity impacts and distribute localized heat fluxes from spacecraft components. Notwithstanding the excellent mechanical, electrical, and thermal properties of individual carbon nanotubes (CNTs), bulk CNT-based composites suffer from CNT anisotropy and high interjunction resistance. We provide a brief overview of scalable methods that can tune electrical and thermal connectivity in bulk CNT composites by tuning CNT shape, intertubular bonding, and packing density. These scalable production methods are posited to open new avenues for incorporating CNTs into thermal interface materials, structural reinforcement, and auxiliary power units in the form of energy-storage devices, especially for use in aerospace applications.

We are reporting on stress engineering utilizing AlN/GaN superlattices (SLs) for epitaxy of GaN layers on 200 mm silicon substrates carried out in Veeco's Propel™ rotating disk, single wafer metal organic chemical vapor deposition (MOCVD) reactor. The Turbodisc® reactor is designed to have homogeneous alkyl/hydride flow distribution and uniform temperature profile, which translate into excellent uniformity and concentric symmetry in epilayer thickness and alloy composition. This feature results in uniform and controllable stress in epilayers across large-size substrates. Crack-free 2 μm GaN layers were grown on 200 mm Si using uniformly strained AlN/GaN SLs with periods of 3–5 and 10–30 nm, respectively. Compressive and tensile stress can be precisely adjusted by changing the thickness of the AlN and GaN layers in the SLs, resulting in controllable wafer curvature/bow after cool down. For a fixed period thickness structure, the effects of growth conditions, such as growth rate of GaN, AlN V/III ratio, and growth temperature, on wafer stress were investigated.

This contribution presents a critical review about some materials used in dosimetry and the interest that has emerged on topaz recently. In addition, results about the feasibility for synthesizing topaz by the HYSY-CVD route using Na2SiF6 and Al2O3 are shown. Synthesis tests in nitrogen atmosphere were conducted varying temperature (700 and 750°C) and time (60 and 90 min) while maintaining constant the amounts of Al2O3 and Na2SiF6. The microstructural characterization by XRD, SEM and EDS revealed the succesful formation of topaz and aluminium fluoride.

Nitrogen-doped multiwalled carbon nanotube (CNT) bundles exhibiting pine-tree-like morphologies were synthesized on silicon–silicon oxide (Si/SiO2) substrates using a pressure-controlled chemical vapor deposition process. Electron field emission (FE) measurements showed a notable emission improvement at low turn-on voltages for the CNT pine-like morphologies (e.g., 0.59 V/µm) in comparison with standard aligned N-doped CNTs (>1.5 V/µm). We envisage that these pine-tree-like structures could be potentially useful in the fabrication of efficient FE and photonic devices.

Boron-doped diamond electrodes have attracted increasing interest from researchers due to their outstanding properties for electroanalysis and other electrochemical applications. Material quality and availability have come a long way since the initial reports on the basic electrochemical properties back in the late 1980s and early 1990s. In this review, we highlight how diamond electrochemistry has diversified and matured in recent years in terms of the understanding of structure-property relationships and the development of new applications of materials in electroanalytical chemistry.

Diamond is a unique material that often exhibits extreme properties compared to other materials. Discovered about 30 years ago, the use of hydrogen in plasma-enhanced chemical vapor deposition (CVD) has enabled the growth and coating of diamond in film form on various substrate materials. CVD diamond research has been actively continued subsequently to develop new understanding and approaches for the growth and processing of this fascinating material. Currently, the study and development of diamond films has enabled a wide range of applications based on the combination of unique and extreme properties of diamond and the variety of film properties obtainable through tuning the microstructure, morphology, impurities, and surfaces. This issue of MRS Bulletin introduces the latest research, recent applications, and the challenges ahead for CVD diamond films.

Diamond has been attracting the attention of many researchers because of its potential for new applications such as in quantum devices and power electronics. These applications are enabled by the progress made in improving the quality of undoped, boron-doped, and phosphorus-doped diamond films grown by chemical vapor deposition techniques. Recent progress in diamond film growth and heterostructures of diamond and other compound semiconductors to realize these electronics applications are reported.

Ultrathin SiC buffer layers have been grown on Si (100) substrates by atmospheric pressure chemical vapor deposition. The evolution of buffer layer morphological properties as a function of carbonization parameters is investigated by atomic force microscopy. Based on the quantitative analysis of the dependences of void density, void depth, void width, and surface roughness on carbonization parameters, a buffer layer growth model is proposed, and the effects of carbonization parameters on buffer layer morphology are clarified. The void density is related to the carbonization temperature, temperature ramp-up rate, and C3H8 concentration by affecting the initial SiC nuclei density. The void size is evolved with processing time and mainly dependent on the carbonization temperature but slightly affected by C3H8 and H2. The buffer layer morphology is deteriorated with increasing H2 flow rate when the C3H8 concentration is fixed.

In this paper, an experimental study aimed at achieving better control of the deposition patterns of carbon nanotubes (CNTs) is presented. CNTs were grown on a long of reactor by the catalytic chemical vapor deposition (CVD) of a benzene/ferrocene solution at 1073 K. The deposition patterns on the substrate were controlled for process times and carrier gas flow rates. In order to investigate the reaction mechanism and production rate for the growth of CNTs in catalyst CVD, computational fluid dynamics (CFD) model was developed in this study. Then the computational model was integrated with the dynamic model to optimize the process parameters formulating a correlation between turbulence, deposition rate for the growth of carbon nanotubes and parameters as process time and carrier gas flow rate. Scanning electron microscopes (SEM) are used to characterize carbon nanotubes products.

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD)2] is a relatively uninvestigated precursor that was used in this work to grow highly c-axis-oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicated that surface carbon on several samples was reduced from as much as 34 at.% to much less than 1 at.% within the first 5 nm, indicating very clean Zn(TMHD)2 precursor decomposition. Microstructural and compositional analysis revealed columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atomic percent ratio indicative of stoichometric ZnO.

Residual stresses in diamond films grown on WC–Co substrates have been investigated by Raman spectroscopy, x-ray diffraction (XRD), and curvature methods. Microcrystalline diamond films were deposited at 650–700 °C in a conventional hydrogen–methane environment by the microwave plasma-enhanced chemical vapor deposition technique. The film thickness, measured from cross-sectional micrographs taken by scanning electron microscopy, changed from 1.5 to 16.5 μm as the growth time increased from 1 to 12 h. The type and the magnitude of the total residual stress obtained from curvature and XRD measurements agreed very well in all of the samples and changed from tensile to compressive as film thickness increased. However, Raman spectroscopy results showed that all films exhibited compressive stress due to the domain size effect. Different methane fractions, varying from 1% to 3%, have been utilized for diamond growth, and the total residual stress increased as more methane was included.

We report on the selective area heteroepitaxy and facet evolution of AlGaN nanostructures on GaN/sapphire substrate using various mask materials. We also report on the challenges associated with selection of an appropriate mask material for selective area heteroepitaxy of AlGaN with varying Al composition. The shape and the growth rate of the nanostructures are observed to be greatly affected by the mask material. The evolution of the AlGaN nanostructures and Al incorporation were studied exhaustively as a function of growth parameters including temperature, pressure, NH3 flow, total alkyl flow, and TMAl/(TMAl+TMGa) ratio. The growth rate of nanostructures was reduced drastically when higher Al percentage AlGaN nanostructures were grown. The growth rates were increased for higher Al percentage AlGaN using a surfactant, which resulted in a high-quality pyramidal structure. As indicated by high-resolution x-ray diffraction and cathodoluminescence spectroscopy, the composition of Al in the AlGaN nanostructure is significantly different from that of a thin film grown under the same growth conditions.

Hafnium silicon oxynitride (HfSiON) films were deposited on 200-mm silicon substrates by low-pressure chemical vapor deposition (LPCVD) from a combination of trisilylamine (TSA) and tetrakis(diethylamido)hafnium(IV) (TDEAH) in the temperature range 450 to 575 °C. A highly volatile and carbon-free silicon precursor TSA was used to deposit HfSiON films for the first time. HfSiON films were deposited in a single step with no need of a post-treatment process for nitrogen incorporation. The film composition was tuned in a wide compositional range, and high growth rates were achieved. NH3 was found to have profound effects on film growth rate, metal ratio (Si% or Hf%), nitrogen incorporation, and carbon residue in the films.