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Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

Published online by Cambridge University Press:  03 March 2011

L.V. Saraf ,
M.H. Engelhard ,
C.M. Wang ,
A.S. Lea ,
D.E. McCready ,
V. Shutthanandan ,
D.R. Baer  and
S.A. Chambers
L.V. Saraf*
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
M.H. Engelhard
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
C.M. Wang
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
A.S. Lea
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
D.E. McCready
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
V. Shutthanandan
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
D.R. Baer
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
S.A. Chambers
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD)2] is a relatively uninvestigated precursor that was used in this work to grow highly c-axis-oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicated that surface carbon on several samples was reduced from as much as 34 at.% to much less than 1 at.% within the first 5 nm, indicating very clean Zn(TMHD)2 precursor decomposition. Microstructural and compositional analysis revealed columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atomic percent ratio indicative of stoichometric ZnO.

Keywords

CChemical vapor deposition (CVD)X-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1230 - 1234
Copyright
Copyright © Materials Research Society 2007

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