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Doping and interface of homoepitaxial diamond for electronic applications

Published online by Cambridge University Press:  12 June 2014

Satoshi Yamasaki ,
Etienne Gheeraert  and
Yasuo Koide
Satoshi Yamasaki
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan; [email protected]
Etienne Gheeraert
Affiliation:
University of Grenoble Alpes, Institut NEEL, France; [email protected]
Yasuo Koide
Affiliation:
National Institute for Materials Science, Japan; [email protected]
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Abstract

Diamond has been attracting the attention of many researchers because of its potential for new applications such as in quantum devices and power electronics. These applications are enabled by the progress made in improving the quality of undoped, boron-doped, and phosphorus-doped diamond films grown by chemical vapor deposition techniques. Recent progress in diamond film growth and heterostructures of diamond and other compound semiconductors to realize these electronics applications are reported.

Keywords

diamonddopantelectronic materialchemical vapor deposition (CVD)
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 6: CVD Diamond—Research, Applications, and Challenges , June 2014 , pp. 499 - 503
Copyright
Copyright © Materials Research Society 2014 

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References

Gruber, A., Dräbenstedt, A., Tietz, C., Fleury, L., Wrachtrup, J., von Borczyskowski, C., Science 276, 2012 (1997).Google Scholar
Mizuochi, N., Makino, T., Kato, H., Takeuchi, D., Ogura, M., Okushi, H., Nothaft, M., Neumann, P., Gali, A., Jelezko, F., Wrachtrup, J., Yamasaki, S., Nat. Photonics 6, 299 (2012).Google Scholar
Koizumi, S., Ono, T., Sakai, T., Japan New Diamond Forum 262 (2006).Google Scholar
Takeuchi, D., Makino, T., Kato, H., Okushi, H., Yamasaki, S., Phys. Status Solidi A 208, 2073 (2011).Google Scholar
Koizumi, S., Watanabe, K., Hasegawa, M., Kanda, H., Science 292, 1899 (2001).Google Scholar
Makino, T., Kato, H., Ogura, M., Watanabe, H., Ri, S.G., Yamasaki, S., Okushi, H., Jpn. J. Appl. Phys. 44, L1190 (2005).Google Scholar
Kato, H., Umezawa, H., Tokuda, N., Takeuchi, D., Okushi, H., Yamasaki, S., Appl. Phys. Lett. 93, 202103 (2008).Google Scholar
Oyama, K., Ri, S.-G., Kato, H., Ogura, M., Makino, T., Takeuchi, D., Tokuda, N., Okushi, H., Yamasaki, S., Appl. Phys. Lett. 94, 152109 (2009).Google Scholar
Yamanaka, S., Watanabe, H., Masai, S., Takeuchi, D., Okushi, H., Kjimura, K., Jpn. J. Appl. Phys. 37, L1129 (1998).CrossRefGoogle Scholar
Chen, Y.G., Ogura, M., Okushi, H., Appl. Phys. Lett. 82, 4367 (2003).CrossRefGoogle Scholar
Teraji, T., Phys. Status Solidi A 203, 3324 (2006).Google Scholar
Kato, H., Futako, W., Yamasaki, S., Okushi, H., Diam. Relat. Mater. 13, 2117 (2004).CrossRefGoogle Scholar
Nesladek, M., Semicond. Sci. Technol. 20, R19 (2005).Google Scholar
Tajani, A., Gheeraert, E., Casanova, N., Bustarret, E., Garrido, J.A., Rumen, G., Nebel, C.E., Newton, M.E., Evans, D., Phys. Status Solidi A 193, 541 (2002).3.0.CO;2-T>CrossRefGoogle Scholar
Kociniewski, T., Barjon, J., Pinault, M.A., Jomard, F., Lusson, A., Ballutaud, D., Gorochov, O., Laroche, J.M., Rzepka, E., Chevallier, J., Saguy, C., Phys. Status Solidi A 203, 3136 (2006).Google Scholar
Isberg, J., Hammersberg, J., Johansson, E., Wikström, T., Twitchen, D.J., Whitehead, A.J., Coe, S.E., Scarsbook, G.A., Science 297, 1670 (2002).Google Scholar
Koizumi, S., Kamo, M., Sato, Y., Ozaki, H., Inuzuka, T., Appl. Phys. Lett. 71, 1065 (1997).CrossRefGoogle Scholar
Katagiri, M., Isoya, J., Koizumi, S., Kanda, H., Appl. Phys. Lett. 85, 6365 (2004).Google Scholar
Kato, H., Yamasaki, S., Okushi, H., Appl. Phys. Lett. 86, 222111 (2005).Google Scholar
Kato, H., Makino, T., Yamasaki, S., Okushi, H., J. Phys. D: Appl. Phys. 40, 6189 (2007).Google Scholar
Collins, A.T., Williams, W.S., J. Phys. C: Solid State Phys. 4, 1789 (1971).CrossRefGoogle Scholar
Chrenko, R.M., Phys. Rev. B: Condens. Matter 7, 4560 (1973).Google Scholar
Gheeraert, E., Koizumi, S., Teraji, T., Kanda, H., Nesladek, M., Phys. Status Solidi A 174, 39 (1999).Google Scholar
Fujimori, N., Imai, T., Doi, A., Vacuum 36, 99 (1986).Google Scholar
Chen, C.F., Chen, S.H., Hong, T.M., Wang, T.C., Diam. Relat. Mater. 3, 632 (1994).Google Scholar
Cifre, J., Puigdollers, J., Polo, M.C., Esteve, J., Diam. Relat. Mater. 3, 658 (1994).Google Scholar
Haubner, R., Bohr, S., Lux, B., Diam. Relat. Mater. 8, 171 (1999).Google Scholar
Borst, T.H., Weis, O., Diam. Relat. Mater. 4, 948 (1995).CrossRefGoogle Scholar
Show, Y., Matsukawa, T., Ito, H., Iwase, M., Izumi, T., Diam. Relat. Mater. 9, 337 (2000).Google Scholar
Volpe, P.-N., Muret, P., Pernot, J., Omnès, F., Teraji, T., Koide, Y., Jomard, F., Planson, D., Brosselard, P., Dheilly, N., Vergne, B., Scharnholz, S., Appl. Phys. Lett. 97, 223501 (2010).Google Scholar
Bustarret, E., Achatz, P., Sacepe, B., Chapelier, C., Marcenat, C., Ortega, L., Klein, T., Philos. Trans. R. Soc. London, Ser. A 366, 267 (2008).Google Scholar
Takano, Y., Nagao, M., Takenouchi, T., Umezawa, H., Sakaguchi, I., Tachiki, M., Kawarada, H., Diam. Relat. Mater. 14, 1936 (2005).CrossRefGoogle Scholar
Fontaine, F., Uzan-Saguy, C., Philosoph, B., Kalish, R., Appl. Phys. Lett. 68, 2264 (1996).Google Scholar
Klein, T., Achatz, P., Kacmarcik, J., Marcenat, C., Gustafsson, F., Marcus, J., Bustarret, E., Pernot, J., Omnes, F., Sernelius, B.E., Persson, C., Ferreira da Silva, A., Cytermann, C., Phys. Rev. B: Condens. Matter 75, 165313 (2007).Google Scholar
Pernot, J., Volpe, P.N., Omnes, F., Muret, P., Mortet, V., Haenen, K., Teraji, T., Phys. Rev. B: Condens. Matter 81, 205203 (2010).Google Scholar
Teraji, T., Wada, H., Yamamoto, M., Arima, K., Ito, T., Diam. Relat. Mater. 15, 602 (2006).Google Scholar
Mortet, V., Daenen, M., Teraji, T., Lazea, A., Vorlicek, V., D’Haen, J., Haenen, K., D’Olieslaeger, M., Diam. Relat. Mater. 17, 1330 (2008).Google Scholar
Kawarada, H., Jpn. J. Appl. Phys. 51, 090111 (2012).Google Scholar
Chicot, G., Tran Thi, T.N., Fiori, A., Jomard, F., Gheeraert, E., Bustarret, E., Pernot, J., Appl. Phys. Lett. 102, 162101 (2012).Google Scholar
Chicot, G., Marechal, A., Motte, R., Muret, P., Gheeraert, E., Pernot, J., Appl. Phys. Lett. 102, 242108 (2013).Google Scholar
Kawarada, H., Aoki, M., Ito, M., Appl. Phys. Lett. 65, 1563 (1994).Google Scholar
Aleksov, A., Vescan, A., Kunze, M., Gluche, P., Ebert, W., Kohn, E., Bergmaier, A., Dollinger, G., Diam. Relat. Mater. 8, 941 (1999).Google Scholar
Miskys, C., Garrido, J., Nebel, C., Hermann, M., Ambacher, O., Stutzmann, M., Appl. Phys. Lett. 82, 290 (2003).Google Scholar
Kueck, D., Scharpf, J., Ebert, W., Fikry, M., Scholz, F., Kohn, E., Phys. Status Solidi A 207, 2035 (2010).Google Scholar
Imura, M., Hayakawa, R., Watanabe, E., Liao, M.Y., Koide, Y., Amano, H., Phys. Status Solidi RRL 5, 125 (2011).Google Scholar
Mönch, W., J. Appl. Phys. 80, 5076 (1996).CrossRefGoogle Scholar
Robertson, J., J. Vac. Sci. Technol. 18, 1785 (2000).Google Scholar
Saito, T., Park, K.H., Hirama, K., Umezawa, H., Satoh, M., Kawarada, H., Liu, Z.Q., Mitsuishi, K., Furuya, K., Okushi, H., J. Electron. Mater. 40, 247 (2011).Google Scholar
Hirama, K., Sato, H., Harada, Y., Yamamoto, H., Kasu, M., Jpn. J. Appl. Phys. 51, 090112 (2012).CrossRefGoogle Scholar
Otsuka, Y., Suzuki, S., Shikama, S., Maki, T., Kobayashi, T., Jpn. J. Appl. Phys. 34, L551 (1995).Google Scholar
Cheng, S.H., Sang, L.W., Liao, M.Y., Liu, J.W., Imura, M., Li, H.D., Koide, Y., Appl. Phys. Lett. 101, 232907 (2012).Google Scholar
Liu, J.W., Liao, M.Y., Imura, M., Koide, Y., Appl. Phys. Lett. 103, 092905 (2013).Google Scholar
Liu, J.W., Liao, M.Y., Imura, M., Oosato, H., Watanabe, E., Tanaka, A., Iwai, H., Koide, Y., J. Appl. Phys. 114, 084108 (2013).Google Scholar