Research Article
Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
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- 13 June 2014, pp. 305-309
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Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
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- 13 June 2014, pp. 310-315
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Effects of Susceptor Geometry on Gan Growth on Si(111) with a New MOCVD Reactor
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- 13 June 2014, pp. 316-321
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Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy
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- 13 June 2014, pp. 322-326
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Influence of Doping on the Lattice Dynamics of Gallium Nitride
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- 13 June 2014, pp. 327-332
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Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
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- 13 June 2014, pp. 333-338
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Properties of Epitaxial Zno Thin Films for Gan and Related Applications
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- 13 June 2014, pp. 339-343
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Comparative Growth of AlN on Singular and Off-Axis 6H and 4H-SiC by MOCVD
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- 13 June 2014, pp. 344-350
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Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source
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- 13 June 2014, pp. 351-356
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Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
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- 13 June 2014, pp. 357-362
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Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
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- 13 June 2014, pp. 363-368
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GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
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- 13 June 2014, pp. 369-374
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Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
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- 13 June 2014, pp. 375-380
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Enhanced GaN Decomposition at MOVPE Pressures
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- 13 June 2014, pp. 381-387
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Defect States in SiC/GaN- and SiC/AlGaN/GaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
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- 13 June 2014, pp. 388-396
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Microstructure of GaN Grown on (111) Si by MOCVD
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- 13 June 2014, pp. 397-402
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Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
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- 13 June 2014, pp. 403-404
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Optical Properties of Si-DOPED AlxGa1−xN/AlyGa1−yN (x=0.24−0.53, y=0.11) Multi-Quantum-Well Structures
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- 13 June 2014, pp. 405-410
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Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
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- 13 June 2014, pp. 411-416
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Effect of Buffer Layer and III/V Ratio on the Surface Morphology of Gan Grown by MBE
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- 13 June 2014, pp. 417-422
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