Research Article
Electrical and Photoelectrical Characterization of Deep Defects In Cubic GaN on GaAs
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 185-190
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Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
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- 13 June 2014, pp. 191-196
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Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
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- 13 June 2014, pp. 197-202
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Characterization of Be-Implanted GaN Annealed at High Temperatures
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- 13 June 2014, pp. 203-208
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Thermal Residual Stress Modeling in AlN and GaN Multi Layer Samples
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- 13 June 2014, pp. 209-214
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Strong piezoelectric effects in unstrained GaN quantum wells
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- 13 June 2014, pp. 215-220
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
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- 13 June 2014, pp. 221-226
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Growth of Oriented Thick Films of Gallium Nitride from the Melt
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- 13 June 2014, pp. 227-232
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P- and N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
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- 13 June 2014, pp. 233-238
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Cubic InGaN Grown by MOCVD
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- 13 June 2014, pp. 239-243
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Optical Investigations of AlGaN on GaN Epitaxial Films
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- 13 June 2014, pp. 244-249
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Extended Defects in GaN: a Theoretical Study
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- 13 June 2014, pp. 250-256
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Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
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- 13 June 2014, pp. 257-262
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Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
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- 13 June 2014, pp. 263-268
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Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of Gan Films Via the Technique of Pendeo-Epitaxy
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- 13 June 2014, pp. 269-274
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Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures
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- 13 June 2014, pp. 275-280
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Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
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- 13 June 2014, pp. 281-286
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High Quality Hydrothermal ZnO Crystals
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 287-292
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Disordering of InGaN/GaN Superlattices after High-Pressure Annealing
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- 13 June 2014, pp. 293-298
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Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
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- 13 June 2014, pp. 299-304
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