GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2 × 10−13 cm2. s−1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.

Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1 m gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n+ GaN is discussed. The etching is diffusion-limited (Ea < 6kCal·mol−1) under all conditions and is significantly faster with bias applied to the sample during light exposure. No etching of InN was observed, due to the very high n-type background doping (> 1020cm−3) in the material.

Static induction transistors (SITs) are short channel FET structures which are suitable for high power, high frequency and high temperature applications. GaN has particularly favorable properties for SIT operation. However, such a device has not yet been fabricated. In this paper we report simulation studies on GaN static induction transistors over a range of device structures and operating conditions. The transistor was modeled with coupled drift-diffusion and heat-flow equations. We found that the performance of the device depends sensitively on the thermal boundary conditions, as self-heating effects limit the maximum voltage swing.

We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 Å/40 Å) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500 °C yield the lowest specific contact resistance rc ( 0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for ∼ 88% of the total series resistance of the LED.

We have studied crystal structure and associated defects in GaN films grown on sapphire under nitrogen-deficient conditions by metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). The structural quality of the PLD films grown at 750 °C was comparable with those grown by MOCVD at 1050 °C having threading dislocations density of about 1010 cm−2 at a film thickness 150-200 nm. Microstructure of the PLD films grown at temperatures above 780°C was found to be similar to that of nitrogen-deficient MOCVD films indicating the loss of nitrogen due to thermal decomposition of the nitride layers. Nitrogen-deficient MOCVD and PLD films exhibit polycrystalline structure with a mixture of cubic zinc-blende and wurtzite hexagonal GaN grains retaining tetragonal bonding across the boundaries and hence the epitaxial orientations and polarity. Renucleation of the wurtzite phase at different {111} planes of cubic GaN results in a rough and faceted surface of the film. Most of the stoichiometric films displayed (0001) Ga-face polarity, but the renucleated inclined wurtzite grains grew in the opposite N-face polarity. The major defects related to the cubic structural metastability are stacking faults and microtwins which being nuclei of the metastable cubic phase have an extremely low energy. We elucidate that the cubic phase is more stable under the nitrogen deficiency and, therefore, can exist without decomposition at higher nitrogen vacancy concentrations in the material.

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0.1-μm-thick Al0.07Ga0.93N capping layer. The Si doping level in the GaN barriers was varied from 1 × 1017 to 3 × 1019 cm−3. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease with increasing Si doping concentration (n), from ∼ 30 ns (for n < 1 × 1017 cm−3) to ∼ 4 ns (for n = 3 × 1019 cm−3). To elucidate whether non-radiative recombination processes affect the measured lifetime, the temperature-dependence of the measured lifetime was investigated. The reduced Stokes shift, the decrease in radiative recombination lifetime, and the increase in structural and interface quality with increasing Si doping indicate that the incorporation of Si in the GaN barriers results in a decrease in carrier localization at potential fluctuations in the InGaN active regions and the interfaces.

We present a theoretical analysis of the gain characteristics of InGaN/AlGaN quantum dot (QD) lasers. We calculate the elastic strain distribution caused by the lattice mismatch between the QD and the barrier using an original method which takes into account the hexagonal symmetry of the structure’s elastic properties. The method is based on an analytical derivation of the Fourier transform of the strain tensor. The proposed approach is combined with a plane-wave expansion method to calculate the carrier spectrum and wave functions. The many-body gain of a laser containing a periodic array of QDs is calculated using the Padé approximation. We show that band gap reduction and the Coulomb enhancement of the interband transition probability can significantly modify the gain spectrum in InGaN/AlGaN QD lasers.

Thin films of GaN grown by MOCVD on (0001) sapphire were studied by transmission electron microscopy in order to correlate the observed extended defects with crystal polarity of the films. We propose relatively simple and unambiguous method of polarity determination for wurtzite group III nitrides based on the dependence of the intensity of diffracted beams upon thickness of the specimen. Due to the dynamic scattering by polar structure, the convergent beam electron diffraction patterns lose inversion symmetry and become in fact fingerprints of the structure carrying information about crystal polarity. In this study, we have used the thinnest regions of the specimens (<15 nm) and multiple diffraction spots in high-symmetry orientation for polarity determination. The films were found to have Ga-polar surfaces, either being unipolar, or containing thin (10-30 nm in diameter) columnar inversion domains (IDs) of N-polarity. The occurrence of IDs was correlated with specific types of dislocation distribution in the films.

The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K) is found to be dominated by the release of a free exciton with thermal activation energy consistent with the exciton localization energy. At higher temperatures a second dissociation channel with activation energy EA = 28 ± 2 meV is observed. The dissociation of a bound exciton complex with exciton localization energy EXloc = 11.7 meV is also dominated by the release of a free exciton. In contrast to previous studies evidence is presented against the hypothesis of this emission being due to the exciton bound to an ionized donor. We find that it originates most likely from an exciton bound to a neutral acceptor.

Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5- and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnification optical system using a high density pulsed excitation source. We suggest that the cavity formed in a pyramid is of a ring type, formed by total internal reflections of light off the pyramids’ surfaces. The mode spacing of the laser emission was found to be correlated to the size of pyramids. The effects of pyramid geometry and pulse excitation on the nature of laser oscillations inside of the pyramids is discussed. Practical applications of the results for the development of light-emitting pixels and laser arrays are suggested.

Based on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound NiIn as a possible ohmic contact. The contacts were fabricated by depositing NiIn on p-GaN films (p ∼ 2 × 1017 cm−3) using RF sputtering from a compound target. The as-deposited, NiIn contacts were found to be rectifying and using I-V characterization a Schottky barrier height of 0.82 eV was measured. Rapid thermal annealing of the contacts was shown to significantly decrease their resistance, with contacts annealed at 800 °C for 1 min yielding the lowest resistance. When annealed at 800 °C for 1 min NiIn contacts exhibited a specific contact resistance of 8-9 × 10−3 Ω cm2 as measured by the circular transmission line model. To allow a more universal comparison the more traditional Ni/Au contacts, processed under the same conditions, were used as a standard. Their measured specific contact resistance (ρc = 1.2 − 2.1 × 10−2 Ωcm2) was significantly higher than that of the NiIn contacts. Demonstrating that NiIn has promise as an ohmic contact to p-GaN and should be studied in greater detail.

In this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2×1016 cm−2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high energy peak was observed to always be lower than that of the low energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region.

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AlN were obtained.

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson’s equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

The quasi-LO and quasi-TO modes of AlN crystallite were investigated. The analysis indicates that the Raman mode behavior concurs with Loudons’ model of mode-mixing in wurtzite (WZ) structure crystals which is due to the long-range electrostatic field. Phononlifetimes of GaN and AlN crystallites were studied via Raman lineshape. It was found that the low energy E2 mode lifetime is about an order of magnitude longer than that of the other modes, and that impurities impact significantly the phonon-lifetimes.