This paper presents a novel technology for the implementation of substrate-integrated waveguide (SIW) structures, based on a paper substrate and realized by an inkjet-printing fabrication process. The use of paper permits to implement low-cost microwave structures and components, by adopting a completely eco-friendly implementation technology. SIW structures appear particularly suitable for implementation on paper, due to the possibility to easily realize multilayered topologies and conformal geometries. In this paper, SIW passive components, and antennas (including straight interconnects, band-pass filters, and slotted-waveguide antennas) are proposed for the first time. The design of the components, the steps of the fabrication process, and the experimental characterization of the prototypes are reported in this paper.

We present the design, fabrication, and measurement of a 2-way modified Wilkinson divider constructed in a coplanar geometry exhibiting ultra wideband isolation, transmission, and port matching in the millimeter-wave frequency range. The proposed divider replaces the lumped resistor in the conventional Wilkinson divider with two quarter-wave length transmission lines, a phase inverter, and two 2Z0 resistors. Except for the three ports that are coplanar waveguides (CPWs), the main body of the divider uses coplanar striplines (CPS). The phase inverter is realized using a simple airbridge-based crossover which is compatible with a modern monolithic microwave integrated circuit process. The divider has a ring-like configuration fabricated on a 620 µm thick semi-insulating GaAs wafer using electron beam lithography (EBL) technology. Three-dimensional (3D) full-wave electromagnetic simulations have been carried out to optimize the design and investigate the possible effect of fabrication tolerance on the performance of the crossover and the divider. Two dividers working at center frequencies of 25 and 80 GHz have been designed, fabricated, and tested. They all show consistent performance in terms of bandwidth, isolation, and port matching. Experimental and simulation results are in excellent agreement.

The implementation and application of single-layer fully-planar extended-composite right-/left-handed transmission lines (E-CRLH TLs) in substrate-integrated waveguide (SIW) technology are presented. The multiband CRLH behavior of these artificial lines is explained by considering the lumped element equivalent circuit model. The potential of these lines for dual-band and quad-band applications is demonstrated by designing and fabricating a quad-band Y-junction power divider and two dual-band band-pass filters. The main relevant advantage of SIW-based E-CRLH TLs over other E-CRLH lines is fabrication simplicity, since only a single metal layer must be etched and lumped elements are avoided. The fabricated prototypes exhibit very reasonable performance. It is remarkable that for dual-band band-pass filters, standard Chebyshev responses can be obtained to a very good approximation.

Resonant substrate integrated near-field sensors are used for characterization of aqueous solutions at three different frequencies. In addition, Chinese hamster ovary (CHO) cells in a culture medium are characterized with the same sensors. Different concentrations as well as different vital states of cell suspensions are examined. The complex permittivity of the samples is evaluated using a linearized method based on perturbation theory. The permittivity differences between the measured cell suspensions are discussed. The resonant frequencies of the sensors are close to 3, 7, and 11 GHz, respectively.

The design and characterization of a new broadband small patch antenna, based on an innovative magneto-dielectric material and suitable for wearable applications at 868 MHz, is presented. To reduce antenna dimensions, while preserving its radiation and matching performance, a barium-strontium hexaferrite Ba0.75Sr0.25Fe12O19 has been synthesized as the antenna substrate to achieve magnetic permeability double than vacuum in the band of interest. First material realization is characterized and dispersive permittivity and permeability behaviors are included in the design of a small patch antenna with a shorting-plate. A button-size realization is obtained and its suitability for wearable applications is numerically and experimentally demonstrated on body with and without the presence of conductive shielding. Very good agreement with measurements is demonstrated for both matching and radiation performance of the antenna.

This paper presents a hybrid antenna design for an optically powered super high frequency (SHF) radio frequency identification transponder applicable for the integration into metal. The key feature of the antenna is its ability to receive microwave signals at SHF for data communication and optical signals for the power supply of the transponder. The antenna design is based on a circular waveguide which is filled with a bundle of polymer optical fibers to guide light to the photodiodes. In addition, a transition is placed within the circular waveguide to transfer the waveguide mode of the SHF signal into a microstrip mode which is a more suitable structure for the integration of electronic transponder components. This paper discusses the constraints and solutions for the aforementioned combination of SHF microwave and light. The figures of merit of the optical power supply are presented, including considerations of the light distribution and the obtained power as a function of the incident angle and the used polymer optical fiber diameter. Furthermore, the measured gain and return loss of the SHF antenna structure is compared to the simulated results.

Cognitive radio (CR) has generated a lot of interest because of the promise of wide instantaneous bandwidths which will improve data rates. Current social trends suggest that CR nodes will ultimately be mobile and handheld. This produces a need for small wideband antennas. The Chu limit imposes a restriction on what is obtainable with passive matching. In this paper, it is shown how a negative impedance converter (NIC) can be used to broadband match a chassis antenna beyond what is obtainable with passive matching. It is also shown how to predict and overcome the instabilities which have limited the top frequency achievable with NICs. The noise and linearity performance of the NIC matched antenna is also shown.

This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.

A polar transmitter driven by digital input signals for envelope and phase is demonstrated, using a band-switching output resonator to achieve multiband operation. A new digital pulse width modulation algorithm is also shown to partially suppress spurious signals associated with the digital input envelope signal. The transmitter consists of a current-mode class-D (CMCD) CMOS power amplifier (PA), together with a buck converter with a dead-time generator for improved efficiency. The CMCD PA is tuned by band-switching capacitors that can handle up to 9 V, and is measured to have approximately 30 dBm output power with 31–35% drain efficiency under single-tone testing. The proposed spurious signal reduction technique works to partially suppress quantization noise without increasing power consumption. Overall efficiencies of 27.1/25.6% are obtained at 30.2/28.9 dBm continuous wave (CW) output powers and 0.85/1.75 GHz carrier frequencies, respectively. Spur suppression of 9–10 dB peak is achieved when the proposed algorithm is applied with wideband code division multiple access (WCDMA) modulation.

This paper reports on digital transmitter architecture for the 450 MHz band using an envelope delta-sigma modulator realized in CMOS and a voltage-mode class-S (VMCS) power amplifier (PA) based on GaN monolithic microwave integrated circuits (MMICs). The class-S PA is characterized for narrowband single-tone signals and a single- as well as a four-carrier downlink wideband code division multiple access (WCDMA) signal with a peak-to-average power ratio of 7.5 dB. Using single-tone excitation the PA shows a maximum drain efficiency of 86% and a peak output power of 4.4 W. At 6 and 10 dB back-off, 59 and 36% efficiency are achieved, respectively. With the single- and four-carrier WCDMA input signals maximum drain efficiencies of 64 and 53% are reached, respectively, and peak output power is 0.7 W. The adjacent channel leakage ratio shows values of about −34 dBc (5 MHz) and −38 dBc (10 MHz) for single-carrier WCDMA excitation. This is the first complete VMCS PA chain characterized with standard communication signals.

A millimeter-wave monolithic integrated circuit consisting of a W-band (75–100 GHz) single-pole-five-throw (SP5T) switch and multiple internal active and passive loads for radiometer calibration was designed and manufactured in a low noise 50 nm GaAs metamorphic high electron mobility transistor technology. This highly compact and integrated front-end device for radiometer systems is capable of ultra fast switching between two identical input ports (e.g. for polarimetric applications) and three internal calibration references. It allows an accurate multi-load calibration with noise temperatures between 220 and 1750 K at the output of the device. Compared to conventional calibration methods this marks a substantial advantage in terms of size, mass, power consumption, complexity, and repetition rate.

In this paper, we present a non-resonant high impedance reflectometer with a reference impedance close to one of the tip probe of a near-field microwave microscope. We show that for an apex of the tip probe of 100 µm there is an optimum reference impedance close to 1 kΩ. To validate this approach a microwave circuit that makes use of lumped elements has been fabricated. A proof of concept is also explored for capacitance measurements between the tip probe and a metal plate.

In this paper a monostatic frequency-modulated continuous-wave (FMCW) radar system around a center frequency of 24 GHz with a wide tuning range of 8 GHz (≈33%) is presented. It is based on a fully integrated single-channel SiGe transceiver chip. The chip architecture consists of a fundamental VCO, a receive mixer, a divider chain, and coupling/matching networks. All circuits, except for the divider, are designed with the extensive use of on-chip monolithic integrated spiral inductors. The chip is fabricated in a SiGe bipolar production technology which offers an fT of 170 GHz and fmax of 250 GHz. The phase noise at 1 MHz offset is better than −100 dBc/Hz over the full-tuning range of 8 GHz and a phase noise of better than −111 dBc/Hz is achieved at 27 GHz. The peak output power of the chip is −1 dBm while the receive mixer offers a 1 dBm input referred compression point to keep it from being saturated. The chip has a power consumption of 245 mW and uses an area of 1.51 mm2. The FMCW radar system achieves a power consumption below 1.6 W. Owing to the high stability of the sensor, high accuracy mesaurements with a range error <±250 µm were achieved. The standard deviation between repeated measurements of the same target is 0.6 µm and the spatial resolution is 28 mm.

This paper presents a novel, compact, single-sideband (SSB) subharmonically-pumped (SHP) direct upconverter developed in a uniplanar 0.18 μm GaAs technology. A total of 100 MHz in-phase and quadrature signals directly modulate the second harmonic of a 30 GHz carrier signal, producing a 60.1 GHz output. Two pairs of antiparallel diodes reduce feed-through of the 30 GHz local oscillator (LO) signal to the mixer's RF output. Novel structures patterned in the center conductor of a coplanar waveguide (CPW) provide matching and size-reduction simultaneously. The 2.1mm2 circuit also uses a miniaturized Wilkinson divider based on asymmetric coplanar stripline and a standard CPW 90° coupler. The SSB SHP direct upconverter exhibits a conversion loss of 10 dB, a lower-sideband rejection of 15 dB and 2fLO suppression of approximately 25 dB over a wide frequency range from 52–61 GHz.

This paper presents a radio frequency (RF) continuous-time band-pass delta sigma modulator (CT BP DSM) receiver realized in a 180 nm SiGe BiCMOS technology. It also provides an introduction to active antenna systems (AAS) for cellular infrastructure base stations, which is the target application for this RF integrated circuit (IC). The internal quantizer and feedback digital to analog converter (DAC) resolution of the CT BP DSM is 2 bit. Without applying DAC linearization techniques such as trimming or dynamic element matching being utilized, measured performance parameters include an SNR and SNDR in 35 MHz bandwidth of 56.7 and 53.7 dB, respectively. IIP3 and noise figure are −6.6 dBm and 10 dB, respectively. No image reception is noticeable within a measurement dynamic range of 83 dB. When driven by single-carrier and three-carrier W-CDMA signals, adjacent channel leakage ratio (ACLR) is −62.6 and −52.1 dB, respectively, making the design also suitable as a modulator for a class-S power amplifier.

In this work, the possibility of achieving GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables us to significantly improve electron confinement under high electric field as compared to single heterostructure while delivering high carrier density (>2 × 1013 cm−2). Subsequently, trapping effects can be minimized resulting in the highest GaN-on-Si output power density up to 40 GHz and at a drain bias of 15 V together with a record fmax close to 200 GHz. At higher bias, infrared camera analysis clearly shows that these devices are mainly limited by self-heating effects. Furthermore, low noise figure has been assessed on this heterostructure, promising integration of cost effective low noise and high power millimeter wave amplifiers.

This paper presents for the first time a novel concept of a microelectromechanical systems (MEMS) waveguide switch based on a reconfigurable surface, whose working principle is to block the wave propagation by short-circuiting the electrical field lines of the TE10 mode of a WR-12 rectangular waveguide. The reconfigurable surface is only 30 µm thick and consists of up to 1260 micromachined cantilevers and 660 contact points in the waveguide cross-section, which are moved simultaneously by integrated MEMS comb-drive actuators. Measurements of fabricated prototypes show that the devices are blocking wave propagation in the OFF-state with over 30 dB isolation for all designs, and allow for transmission of less than 0.65 dB insertion loss for the best design in the ON-state for 60–70 GHz. Furthermore, the paper investigates the integration of such microchips into WR-12 waveguides, which is facilitated by tailor-made waveguide flanges and compliant, conductive-polymer interposer sheets. It is demonstrated by reference measurements where the measured insertion loss of the switches is mainly attributed to the chip-to-waveguide assembly. For the first prototypes of this novel MEMS microwave device concept, the comb-drive actuators did not function properly due to poor fabrication yield. Therefore, for measuring the OFF-state, the devices were fixated mechanically.

This paper presents the design and measurement of two different switch matrix modules based on Radio Frequency Microelectromechanical System (RF MEMS) switches. The operational frequency range is between 25.5 GHz and 26.5 GHz for data links between a Geostationary Earth Orbit (GEO) relay satellite and Low Earth Orbit (LEO) satellites. The switch matrix implements a key functionality for tracking the incident signals of the LEO satellites on the receive feed antenna array of the GEO satellite's reflector antenna. Two different technologies are used to build simplified switch matrix modules suitable for realizing the full functionality switching matrix. Rogers RT/Duroid 5880 with commercially available RF MEMS is used to build the first module, while EADS in house RF MEMS are integrated in Rogers Ultralam 3850 Liquid Crystal Polymer (LCP) for the second module. Maximum insertion losses of 8.5 dB and 10.2 dB have been measured for the Rogers RT/Duroid 5880 and the LCP module, respectively. Isolation is higher than 45 dB and a minimum return loss of 15 dB is shown. Finally, the measured losses in the LCP module are analyzed and suitable improvements are discussed.

Emerging intrinsically tunable film bulk acoustic wave(BAW) resonators allow the development of new generation reconfigurable and agile microwave circuits. In this paper, we demonstrate the enhancement of tunable performance of the high Q-factor BaxSr1−xTiO3 BAW – solidly mounted resonators (BAW–SMR) by varying Ba concentration. The Ba0.5Sr0.5TiO3 BAW–SMR reveal tunability of series resonance frequency up to 2.4%, electromechanical coupling coefficient up to 7.5% and rather high Q-factor, up to 250 at 5.3 GHz. Correlations between the measured electroacoustic parameters are analyzed using the theory of dc field-induced piezoelectric effect in paraelectric phase ferroelectrics. Higher coupling coefficient and tunability of resonance frequency of the Ba0.5Sr0.5TiO3 BAW–SMR are associated with higher tunability of permittivity. Strong anisotropy in field-induced piezoelectric effect is predicted with highest coupling coefficient in (001) direction of the BaxSr1−xTiO3 films. It is also shown that the tunability of series resonance frequency of Ba0.5Sr0.5TiO3 BAW–SMR is limited by relatively high and negative nonlinear electrostriction coefficient which is found to be m ≈ −4·1010 m/F. The BAW–SMR Q-factor is limited significantly by extrinsic acoustic loss associated with wave scattering at reflection from relatively rough top interface. The results of analysis show possible ways of further improvement of the performance of tunable BAW–SMR.