Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-18T08:04:17.846Z Has data issue: false hasContentIssue false
  • English
  • Français

A proof of concept of a non-resonant near-field microwave microscope based on a high impedance reflectometer

Published online by Cambridge University Press:  03 June 2013

David Glay ,
Adelhatif El Fellahi  and
Tuami Lasri
David Glay*
Affiliation:
IEMN – University of Lille 1, Av. Poincaré – CS 60069, 59652 Villeneuve d'Ascq, France. Phone: +33 (0)320197941
Adelhatif El Fellahi
Affiliation:
IEMN – University of Lille 1, Av. Poincaré – CS 60069, 59652 Villeneuve d'Ascq, France. Phone: +33 (0)320197941
Tuami Lasri
Affiliation:
IEMN – University of Lille 1, Av. Poincaré – CS 60069, 59652 Villeneuve d'Ascq, France. Phone: +33 (0)320197941
*
Corresponding author: D. Glay Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

In this paper, we present a non-resonant high impedance reflectometer with a reference impedance close to one of the tip probe of a near-field microwave microscope. We show that for an apex of the tip probe of 100 µm there is an optimum reference impedance close to 1 kΩ. To validate this approach a microwave circuit that makes use of lumped elements has been fabricated. A proof of concept is also explored for capacitance measurements between the tip probe and a metal plate.

Keywords

Characterization of material parametersCircuit design and applicationsNear-field microwave microscopy
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 3: European Microwave Week 2012 , June 2013 , pp. 301 - 308
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Gao, C.; Xiang, X.-D.: Quantitative microwave near-field microscopy of dielectric properties. Rev. Sci. Instrum., 69 (11) (1998), 3846–3851.Google Scholar
[2]Anlage, S.M.; Talanov, V.V.; Schwartz, A.R.: Principles of Near-Field Microwave Microscopy, Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale, vol. I, Kalinin, S.K. and Gruverman, A. (Ed.), Springer–Verlag, New York, ISBN: 978-0-387-28667-9, 2007, 215–253.Google Scholar
[3]Rouhi, N.; Jain, D.; Burke, P.J.: Nanoscale devices for large-scale applications. IEEE Microw. Mag., 11 (7) (2010), 72–80.Google Scholar
[4]Imtiaz, A.; Pollak, M.; Anlage, S.M.: Near-field microwave microscopy on nanometer length scales. J. Appl. Phys., 97 (4) (2005), 044302.1–044302.6.Google Scholar
[5]Weber, J.C. et al. : A near-field scanning microwave microscope for characterization of inhomogeneous photovoltaics. Rev. Sci. Instrum., 83 (2012), 083702.1–083702.7.Google Scholar
[6]Kharkovsky, S. et al. : Microwave resonant switched-slot probe with perpendicular coaxial feed, in Proc. of IEEE Instrumentation and Measurement Technology Conf. (I2MTC), May 2010, 1299–1303.Google Scholar
[7]Chisum, J.D.; Popović, Z.: Performance limitations and measurement analysis of a near-field microwave microscope for nondestructive and subsurface detection. IEEE Trans. Microw. Theory Tech., 60 (8) (2012), 2605–2615.Google Scholar
[8]Randus, M.; Hoffmann, K.: A method for direct impedance measurement in microwave and millimeter-wave bands. IEEE Trans. Microw. Theory Tech., 59 (8) (2011), 2123–2130.Google Scholar
[9]Huber, H.P. et al. : Calibrated nanoscale dopant profiling using a scanning microwave microscope. J. Appl. Phys., 111 (2012), 014301.1–014301.9.Google Scholar
[10]Nougaret, L. et al. : Gigahertz characterization of a single carbon nanotube. Appl.Phys. Lett., 96 (4) (2010), 042109.1–042109.3.Google Scholar
[11]Chen, F.; Chandrakasan, A.; Stojanovic, V.: An oscilloscope array for high-impedance device characterization. IEEE Proc. ESSCIRC, 11 (7) (2009), 112–115.Google Scholar
[12]Usanov, D.A. et al. : Microwave imaging of the ceramic plate surface with the nanometer metal layer by means of the near-field microscope based on the gunn-diode oscillator, in Proc. 41st European Microwave Conf. (EuMC), October 2011, pp. 210–213.Google Scholar
[13]Imtiaz, A.; Baldwin, T.; Nembach, H.T.; Wallis, T.M.; Kabos, P.: Near-field microwave microscope measurements to characterize bulk material properties. Appl. Phys. Lett., 90 (2007), 243105.1–243105.3.Google Scholar
[14]Imtiaz, A. et al. : Frequency-Selective Contrast on Variably Doped P-Type Silicon with a Scanning Microwave Microscope. J. Appl. Phys., 111 (2012) 093727.1–093727.6.Google Scholar
[15]El Fellahi, A.; Glay, D.; Haddadi, K.; Lasri, T.: High impedance RF four-port reflectometer, in Proc. 41st European Microwave Conf. (EuMC), October 2011, 491–494.Google Scholar
[16]Owen, C.: Owen Resistive Splitter, May 2007. [Online] http://www.microwaves101.com/encyclopedia/Resistive_splitter2.cfmGoogle Scholar
[17]Glay, D.; El Fellahi, A.; Lasri, T.: High impedance reflectometer dedicated to non-resonant near-field microwave microscopy, in Proc. 42nd European Microwave Conf. (EuMC), November 2012.Google Scholar