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MEMS reconfigurable millimeter-wave surface for V-band rectangular-waveguide switch

Published online by Cambridge University Press:  23 April 2013

Zargham Baghchehsaraei ,
Umer Shah ,
Jan Åberg ,
Göran Stemme  and
Joachim Oberhammer
Zargham Baghchehsaraei*
Affiliation:
Micro and Nanosystems, School of Electrical Engineering, KTH Royal Institute of Technology, 100 44 Stockholm, Sweden
Umer Shah
Affiliation:
Micro and Nanosystems, School of Electrical Engineering, KTH Royal Institute of Technology, 100 44 Stockholm, Sweden
Jan Åberg
Affiliation:
MicroComp Nordic, Friparksvägen 3, 146 38 Tullinge, Sweden
Göran Stemme
Affiliation:
Micro and Nanosystems, School of Electrical Engineering, KTH Royal Institute of Technology, 100 44 Stockholm, Sweden
Joachim Oberhammer
Affiliation:
Micro and Nanosystems, School of Electrical Engineering, KTH Royal Institute of Technology, 100 44 Stockholm, Sweden
*
Corresponding author: Z. Baghchehsaraei Email: [email protected]
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Abstract

This paper presents for the first time a novel concept of a microelectromechanical systems (MEMS) waveguide switch based on a reconfigurable surface, whose working principle is to block the wave propagation by short-circuiting the electrical field lines of the TE10 mode of a WR-12 rectangular waveguide. The reconfigurable surface is only 30 µm thick and consists of up to 1260 micromachined cantilevers and 660 contact points in the waveguide cross-section, which are moved simultaneously by integrated MEMS comb-drive actuators. Measurements of fabricated prototypes show that the devices are blocking wave propagation in the OFF-state with over 30 dB isolation for all designs, and allow for transmission of less than 0.65 dB insertion loss for the best design in the ON-state for 60–70 GHz. Furthermore, the paper investigates the integration of such microchips into WR-12 waveguides, which is facilitated by tailor-made waveguide flanges and compliant, conductive-polymer interposer sheets. It is demonstrated by reference measurements where the measured insertion loss of the switches is mainly attributed to the chip-to-waveguide assembly. For the first prototypes of this novel MEMS microwave device concept, the comb-drive actuators did not function properly due to poor fabrication yield. Therefore, for measuring the OFF-state, the devices were fixated mechanically.

Keywords

RF-MEMS and MOEMSPassive components and circuits
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 3: European Microwave Week 2012 , June 2013 , pp. 341 - 349
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

REFERENCES

[1]Kich, R.; Ando, M.N.: Compact waveguide “T” switch, U.S. Patent 6 201 906 B1, March 13, 2001.Google Scholar
[2]Henry, R.; Heitzmann, M.; Sillard, G.: PIN diode switch mounted in a ridge waveguide, U.S. Patent 4 660 008, April 21, 1987.Google Scholar
[3]Craven, G.F.: Waveguide switch, U.S. Patent 3 979 703, September 7, 1977.Google Scholar
[4]Rebeiz, G.M.: RF MEMS: Theory, Design, and Technology, John Wiley & Sons Inc., New York, Ny, USA, 2003.Google Scholar
[5]Yao, J.J.: RF MEMS from a device perspective. J. Micromech. Microeng., 10 (2000), R9–R38.CrossRefGoogle Scholar
[6]Lucyszyn, S.: Review of radio frequency microelectromechanical systems technology. IEE Proc., Sci. Meas. Technol., 151 (2004), 93–103.Google Scholar
[7]Rebeiz, G.M.; Muldavin, J.B.: RF MEMS switches and switch circuits. IEEE Microw. Mag., 2 (2001), 59–71.Google Scholar
[8]Brown, E.R.: RF-MEMS switches for reconfigurable integrated circuits. IEEE Trans. Microw. Theory Tech., 46 (1998), 1868–1880.Google Scholar
[9]Oberhammer, J.; Stemme, G.: Active opening force and passive contact force electrostatic switches for soft metal contact materials. Int. J. Microelectromech. Syst., 15 (2006), 1235–1242.Google Scholar
[10]Liu, A.Q.; Tang, M.; Agarwal, A.; Alphones, A.: Low-loss lateral micromachined switches for high frequency applications. J. Micromech. Microeng., 15 (2005), 157–167.Google Scholar
[11]Mahameed, R.; Rebeiz, G.M.: RF MEMS capacitive switches for wide temperature range applications using a standard thin-film process. IEEE Trans. Microw. Theory Tech., 59 (2011), 1746–1752.Google Scholar
[12]Nieminen, H.; Ermolov, V.; Nybergh, K.; Silanto, S.; Ryhänen, T.: Microelectromechanical capacitors for RF applications. J. Micromech. Microeng., 12 (2002), 177–186.Google Scholar
[13]Dec, A.; Suyama, K.: Micromachined electro-mechanically tunable capacitors and their applications to RF IC's. IEEE Trans. Microw. Theory Tech., 46 (1998), 2587–2596.Google Scholar
[14]Borwick, R.L. III.; Stupar, P.A.; DeNatale, J.; Anderson, R.; Tsai, C.; Garrett, K.; Erlandson, R.: A high Q, large tuning range MEMS capacitor for RF filter systems. Sens. Actuators A, Phys., 103 (2003), 33–41.Google Scholar
[15]Lakshminarayanan, B.; Weller, T.M.: Optimization and implementation of impedance-matched true-time-delay phase shifters on quartz substrate. IEEE Trans. Microw. Theory Tech., 55 (2007), 335–342.Google Scholar
[16]Hung, J.-J.; Dussopt, L.; Rebeiz, G.M.: Distributed 2- and 3-bit W-band MEMS phase shifters on glass substrates. IEEE Trans. Microw. Theory Tech., 52 (2004), 600–606.Google Scholar
[17]Somjit, N.; Stemme, G.; Oberhammer, J.: Binary-coded 4.25-bit W-band monocrystalline–silicon MEMS multistage dielectric-block phase shifters. IEEE Trans. Microw. Theory Tech., 57 (2009), 2834–2840.Google Scholar
[18]Jiang, H.; Wang, Y.; Yeh, J.-L.A.; Tien, N.C.: On-chip spiral inductors suspended over deep copper-lined cavities. IEEE Trans. Microw. Theory Tech., 48 (2000), 2415–2423.Google Scholar
[19]Herrick, K.J.; Schwarz, T.A.; Katehi, L.P.B.: Si-micromachined coplanar waveguides for use in high-frequency circuits. IEEE Trans. Microw. Theory Tech., 46 (1998), 762–768.CrossRefGoogle Scholar
[20]Hong-Teuk, K.; Sanghwa, J.; Jae-Hyoung, P.; Chang-Wook, B.; Yong-Kweon, K.; Youngwoo, K.: A new micromachined overlay CPW structure with low attenuation over wide impedance ranges and its application to low-pass filters. IEEE Trans. Microw. Theory Tech., 49 (2001), 1634–1639.Google Scholar
[21]Daneshmand, M.; Mansour, R.R.; Sarkar, N.: RF MEMS waveguide switch. IEEE Trans. Microw. Theory Tech., 12 (2004), 2651–2657.Google Scholar
[22]Legtenberg, R.; Groeneveld, A.W.; Elwenspoek, M.: Comb-drive actuators for large displacements. J. Micromech. Microeng., 6 (1996), 320–329.CrossRefGoogle Scholar
[23]Hou, M.T.-K.; Huang, G.K.-W.; Huang, J.-Y.; Liao, K.-M.; Chen, R.; Yeh, J.-L.A.: Extending displacements of comb drive actuators by adding secondary comb electrodes. J. Micromech. Microeng., 16 (2006), 684–691.Google Scholar
[24]Sterner, M.; Roxhed, N.; Stemme, G.; Oberhammer, j.: Static zero-power-consumption coplanar waveguide embedded DC-to-RF metal-contact MEMS switches in two-port and three-port configuration. IEEE Trans. Electron Devices, 7 (2010), 1659–1669.CrossRefGoogle Scholar