Research Article
Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
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- 13 June 2014, e1
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InGaN/GaN/AlGaN-Based Leds and Laser Diodes
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- 13 June 2014, pp. 1-17
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Material Properties of GaN in the Context of Electron Devices
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- 13 June 2014, pp. 18-26
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Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
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- 13 June 2014, e2
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A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
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- 13 June 2014, e3
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Near Defect Free GaN Substrates
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- 13 June 2014, pp. 27-37
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Dry and Wet Etching for Group III – Nitrides
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- 13 June 2014, pp. 38-48
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Novel approach to simulation of group-III nitrides growth by MOVPE
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- 13 June 2014, e4
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Contact Issues of GaN Technology
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- 13 June 2014, pp. 49-56
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Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
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- 13 June 2014, e5
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The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
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- 13 June 2014, e6
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Pyroelectric and Piezoelectric Properties of GaN-Based Materials
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- 13 June 2014, pp. 57-68
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Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
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- 13 June 2014, e7
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Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
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- 13 June 2014, pp. 69-74
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Growth and Device Performance of GaN Schottky Rectifiers
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- 13 June 2014, e8
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Mechanisms of Optical Gain in Cubic GaN and InGaN
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- 13 June 2014, pp. 75-80
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Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown: InGaN Epilayers and InGaN/GaN Quantum Wells
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- 13 June 2014, pp. 81-86
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Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes
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- 13 June 2014, e9
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Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures
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- 13 June 2014, pp. 87-92
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Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
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- 13 June 2014, e10
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