The effect of nanoscale Pt particles embedded in ferroelectric matrix on the polarization switching characteristics of Pb(Zr0.5Ti0.5)O3 (PZT) thin films of low thickness was investigated. Two different nanocomposite structures of PZT-Pt thin films were fabricated for the study. The first one incorporated a single layer of Pt nano-particles embedded in the PZT film, which was formed by annealing an ultrathin Pt layer that had been inserted into the middle of the deposited PZT. The other one had Pt nano-particles embedded uniformly and coherently in the lattice of the PZT matrix, which was generated by annealing the cosputtered films of PZT and Pt. The electric field applied on the films can be locally intensified near the embedded Pt particles, which markedly enhances the polarization switching characteristic of the above PZT-Pt nanocomposite films. Accordingly, a satisfactorily higher remanent polarization was obtained than exhibited by normal PZT films, but the coercive field was only slightly higher. However, adding an excess of Pt made the nanocomposite films too leaky to exhibit the enhancement. Moreover, the nanocomposite PZT-Pt films in the capacitor configuration of Pt/LaNiO3/PZT-Pt/LaNiO3/Pt also exhibited highly reliable polarization retention and fatigue resistance.

A Co–Ag potential in the form of TB-SMA (the second moment approximation of the tight-binding scheme) is derived based on some ab initio calculated physical properties. Applying the derived potential, molecular dynamics simulations reveal that a Co-/Ag-based solid solution retains its atomic homogeneity up to a critical ratio of9 Ag/12 Co at.%, over which the Ag/Co solute atoms begin to segregate. Correspondingly, a cage-like configuration is proposed to have 1 Ag/Co atom isotropically surrounded by 9 Co/7 Ag atoms for the homogeneous solid solution. Moreover, when the solute atoms exceed 12 Ag/18 Co at.%, the solid solution turns into an amorphous phase with inhomogeneous atomic structure.

Described is a method for preparing crystalline silver nanorods in water, in the absence of a surfactant or polymer to direct nanoparticle growth, and without externally added seed crystallites. The procedure used is one in which a silver salt is reduced to silver metal by sodium citrate under the influence of microwave irradiation. Key aspects for the production of these nanorods are the use of a closed-chamber microwave heating system that allows precise temperature control and judicious choice of the citrate concentration. This novel finding demonstrates the utility of microwave-assisted synthesis and provides a promising method for the preparation of silver nanorods.

Molecular dynamics simulations of approximately 15 Å thick intergranular films (IGFs) containing SiO2 and CaO in contact with two surface terminations of the prism (10¯10) and basal planes (0001) of Si3N4 were performed using a multibody interatomic potential. Samples with the same composition (1.5 mol% CaO) and number of atoms but different crystal planes (i.e., the prism and basal planes of Si3N4) were studied. In both the prism and basal cases, the IGF in the final configuration is well-ordered in the interface region. A small number of N ions from the crystal moved into the IGF near the interface, and O ions moved into the N sites in the crystal, indicating the formation of a Si–O–N interface. In addition, Ca ions do not segregate to the IGF–crystal interface. The bonding characteristics of the O ions at the interface with neighbor Si ions are different in the prism and basal cases. Such difference may be explained by the difference in the two crystal Si3N4 surfaces. The Si–O bond length of the IGF has a range from 1.62 Å to 1.64 Å, consistent with recent experimental findings.

In view of obtaining a Si:H network at the onset of microcrystallinity at a high deposition rate, we have adopted an intelligent approach to find out a tricky plasma condition in radio frequency (rf) plasma-enhanced chemical vapordeposition that provides a better control on growth introducing retarded microcrystallization. The deposition parameter includes a combination of high electrical power applied to the (SiH4+H2)-plasma and high gas pressure in thereaction chamber. High rf power increases the number density of film-forming precursors as well as atomic H density in the plasma, which helps to increase thefilm deposition rate and to promote microcrystallinity, respectively. In addition,high pressure helps not only to increase the film-growth rate by producing a dense plasma but also retards the microcrystallization process by increasing significantlythe gas phase collision frequency and consequently reducing the effective reactivityof atomic H on the surface of a fast-growing Si:H network. A combination of high-power and high-pressure plasma conditions provides a reasonably wide rangeof H2 dilution to work with and better control in producing a Si:H network at theonset of microcrystallinity, while increasing the film-growth rate.

A three-dimensional finite element analysis (FEA) model with elastic–plastic anisotropy was built to investigate the effects of anisotropy on nanoindentation measurements for cortical bone. The FEA model has demonstrated a capability to capture the cortical bone material response under the indentation process. By comparison with the contact area obtained from monitoring the contact profile in FEA simulations, the Oliver–Pharr method was found to underpredict or overpredict the contact area due to the effects of anisotropy. The amount of error (less than 10% for cortical bone) depended on the indentation orientation. The indentation modulus results obtained from FEA simulations at different surface orientations showed a trend similar to experimental results and were also similar to moduli calculated from a mathematical model. The Oliver–Pharr method has been shown to be useful for providing first-order approximations in the analysis of anisotropic mechanical properties of cortical bone, although the indentation modulus is influenced by anisotropy.

Nanocrystalline yttria-doped ceria powder, with the composition Ce0.55Y0.45O1.775, was synthesized by a combustion technique using citric acid as the fuel and the corresponding metal nitrates as oxidants. This process involves mild conditions as the external temperature required to initiate the combustion is only approximately 250 °C. The product was characterized by x-ray diffraction (XRD) to ascertain the phase purity. The crystallite size of these calcined samples, as seen by transmission electron microscopy, was found to be in the range 6 nm to 50 nm. The surface area of the fine powder, as obtained from the Brunauer–Emmett–Teller technique, was about 140 m2/g. The agglomeration behavior as a function of temperature and the lattice thermal expansion studies were carried out using high-temperature XRD. This nanocrystalline powder resulted in nearly theoretical bulk density at a relatively lower temperature, which is attributed to the superior powder properties. The sintered microstructure, as studied by scanning electron microscopy, revealed the presence of fine grains.

A simple and inexpensive method to modify the surface of a Ti3Al-based alloy, liquid-phase siliconizing and aluminizing by an Al-Si alloy, has been proposed. The surface modification at 1013 K for 10 min using Al-10 wt% Si melt resulted in a modified layer with a thickness of about 21 μm, composed of TiAl3 and TiSi2. The coating improved the isothermal oxidation resistance of the Ti3Al-based alloy at 1073 K. A continuous alumina-rich scale was formed at the outermost surface after oxidation. SiO2 was detectable in the oxide scale. The results of x-ray diffraction and x-ray energy dispersive spectrometer analysis showed that during oxidation, some of the TiSi2 in the coating was oxidized to SiO2. In the meantime, the TiSi2 was reduced to a lower silicide, Ti5Si4. The change of the surface microstructure after oxidation and the diffusion reaction between the coating and the Ti3Al substrate were also discussed.

A new nano-ternary Mg–8 mol% LaNi0.5 was prepared by melted and subsequent mechanical alloying technique for hydrogen storage. It was found from our experiments that, this kind of alloy had superior hydriding/dehydriding characteristics in comparison with conventional materials for hydrogen storage. It possessed large hydrogen capacity at a lower temperature, which could absorb 4.55–7.01 mass% H under 3 MPa hydrogen pressure and desorb 4.40–6.90 mass% H under 0.0133 MPa in 600 s above 423 K without any activation requirement drawn from our pressure-composition isotherm and kinetic experiments. Through the x-ray diffraction and transmission electron microscopy experiments, we further found that these superior characteristics could be attributed to the multiphase structure and a catalytic effect of LaH3 and Mg2Ni that were formed in the material preparation of mechanical alloying process. Finally, based on these data the relationships between equilibrium pressure of hydrogen and temperature were obtained, they were lgp(0.1 MPa) = −3985/T + 7.188(553 K ⩽ T ⩽ 573K) for hydriding and lgp(0.1 MPa) = −3804/T + 6.770 (553 K ⩽ T ⩽ 573 K) for dehydriding.

Polycrystalline diamond films with a predominant (100) texture were deposited onto silicon substrates using hot-filament chemical vapor deposition. During film deposition, different temperature gradients were created and imposed laterally across the substrate materials. Films grown under a gradient of 100 °C cm−1 displayed large (100) oriented grains. No crystallite (100) orientation was observed in the as-grown films prepared without a temperature gradient. It was observed that the diamond grain size varied as a function of the gradient. The lower gradient resulted in smaller grains and vice versa. Furthermore, the size of the grains was a function of the deposition time. The orientation of the diamond grains changed gradually across the substrate from (100) to (110) orientation as we scanned from the high-temperature to the low-temperature zone. The films were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy. XRD showed strong (400) reflections in the oriented samples. SEM results indicated the presence of smooth diamond surfaces consisting of predominantly (100) oriented platelets. As the (100) oriented diamond grains were grown on top of the (100) oriented silicon substrates, the faces were mostly aligned parallel to the substrate surface resulting in the deposition of a smooth diamond surface. AFM observations revealed the presence of steps located at the boundaries of the oriented grains. FTIR results showed the characteristic difference in hydrogen bonding in the oriented samples and gave useful information about mechanisms responsible for the orientation. Quantitative analysis was carried out to measure the H content in the films, and it was found that the oriented films contained less hydrogen. Our findings suggest that high saturation of carbon and a concentration gradient of sp3 CH2 species can be the key factor in the oriented growth of (100) diamond grains.

It is difficult to deposit a very thin polymer layer onto a fiber-shaped substrate from solution because the high interfacial energy can lead to dewetting. This difficulty presents itself when attempting to apply a gate dielectric to conductive fiber substrates during the fabrication of fiber transistors for use in applications such as “electrotextiles” and optical switches. In this article, we present a dip coating process that applies a gate dielectric to metal-coated optical fibers with high uniformity and reproducibility, resulting in pentacene field-effect transistors with excellent transistor characteristics including mobilities up to 0.4 cm2/Vs and on/off ratios up to 7000. In one case, a memory effect was demonstrated. Several gate dielectrics were successfully applied to the optical fibers, suggesting a baseline set of suitable materials for this purpose. A thorough study of the dip coating conditions is presented, including proposed explanations of the effects of different coating procedures and solution physical properties. Finally, alternative architectures that would provide much higher W/L ratios and on-currents are described.

In this paper, we reported the rapid synthesis of disklike (ZnSe)2·EN precursor via a simple and convenient polyol method. Annealing the precursor in argon stream at 500 °C resulted in the formation of ZnSe crystals with unique quasi-network structure. The obtained samples were characterized by powder x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, infrared absorbance spectra, and thermogravimetric analysis. The influence of PEG200 on the final products in the system was also discussed.

Numerical simulations of organic field-effect transistors (OFET) of bottom and top contact (BOC, TOC) design with different source/drain contacts were carried out considering an exponential distribution of trap states in the gap of the active layer (a-Si model). For ohmic contacts, the current-voltage characteristics are similar to the trap-free case and there is not much difference between the two designs. However, the currents are lower due to immobile trapped charges, the threshold voltage is shifted, and the inverse subthreshold slope increases due to trap recharging. An analytical approximation for the effective mobility deviates from the simulation up to 20%. For low source/drain work function, there occur particular dependencies of the current on the gate voltage for the two designs, which are explained with the internal concentration and field profiles. A series resistance between source and channel causes in the TOC structure an abrupt transition from the gate voltage independent active region into saturation. In the BOC case, the reverse-biased Schottky-type source contact dominates the current. Through simulation of measured characteristics of prepared OFETs based on a modified poly-(phenylene-vinylene), the observed hysteresis is analyzed.

A nano-thin TiO2 layer was uniformly coated on spherical Ni particles for applications in multilayer ceramic capacitors via a controlled hydrolysis process using TiCl4, (C2H5)2NH (diethylamine, DEA), and C4H9OH as Ti-source, gradual (OH)- former, and solvent, respectively. At the constant [DEA]/[TiCl4] =10.6, the Ti-hydroxide could be coated uniformly using the dilute source solution ([TiCl4] ≤ 0.2 M) while the Ti-hydroxide powder in a separated form was frequently observed at [TiCl4] ≥ 0.4 M. A uniform coating was attained at the slower precipitation, and the kinetics of precipitation was controlled by tuning the trace amount of water in the solution. The TiO2-coating not only prevented Ni oxidation but also retarded the sintering between the Ni particles to a large extent.

This paper reports the preparation conditions and structure characteristics of Al–Cr–Fe very thin films (10–30 nm) obtained by the flash evaporation technique. The films are either amorphous or crystallized, depending on the thickness of the sample and temperature of the substrate. Annealing of amorphous films leads to crystallization of intermetallic phases that are all linked with quasicrystals. In particular, we have identified by transmission electron microscopy the following structures: body-centered-cubic (bcc) γ-brass phase, monoclinic λ–Al13(Cr,Fe)4 phase, and orthorhombic O1-phase, all of them already observed in this system, together with four new structures, i.e., a face-centered-cubic (fcc) γ-brass phase (superstructure of the bcc phase), monoclinic λ′-phase (related to the λ-phase) and two orthorhombic phases (1/1/; 1/1) and (1/0; 2/1) approximants of the decagonal phase). In this study, we point out the occurrence of twin defects of the λ–Al13(Cr,Fe)4 phase. Films prepared directly in the crystalline state comprise the O1 approximant. Electron energy loss spectroscopy measurements show that all films are not oxidized except for the presence of a native oxide layer that forms in ambient atmosphere with a thickness that cannot exceed 0.3 nm. Optical properties were investigated and show that films need to be large enough (>30 nm) to reproduce the properties of bulk alloys. Finally, contact angle wetting measurements reveal that the presence of such films on a substrate, even at very low thickness, considerably decreases the wetting behavior by water.

We report the synthesis of thin films of B–C–N and C–N deposited by N+ ion-beam-assisted pulsed laser deposition (IBPLD) technique on glass substrates at different temperatures. We compare these films with the thin films of boron carbide synthesized by pulsed laser deposition without the assistance of ion-beam. Electron diffraction experiments in the transmission electron microscope shows that the vapor quenched regions of all films deposited at room temperature are amorphous. In addition, shown for the first time is the evidence of laser melting and subsequent rapid solidification of B4C melt in the form of micrometer- and submicrometer-size round particulates on the respective films. It is possible to amorphize B4C melt droplets of submicrometer sizes. Solidification morphologies of micrometer-size droplets show dispersion of nanocrystallites of B4C in amorphous matrix within the droplets. We were unable to synthesize cubic carbon nitride using the current technique. However, the formation of nanocrystalline turbostratic carbo- and boron carbo-nitrides were possible by IBPLD on substrate at elevated temperature and not at room temperature. Turbostraticity relaxes the lattice spacings locally in the nanometric hexagonal graphite in C–N film deposited at 600 °C leading to large broadening of diffraction rings.

Micromachined fuel cells are among a class of microscale devices being explored for portable power generation. In this paper, we report processing and geometric design criteria for the fabrication of free-standing electrolyte membranes for microscale solid-oxide fuel cells. Submicron, dense, nanocrystalline yttria-stabilized zirconia (YSZ) and gadolinium-doped ceria (GDC) films were deposited onto silicon nitride membranes using electron-beam evaporation and sputter deposition. Selective silicon nitride removal leads to free-standing, square, electrolyte membranes with side dimensions as large as 1025 μm for YSZ and 525 μm for GDC, with high processing yields for YSZ. Residual stresses are tensile (+85 to +235 MPa) and compressive (–865 to -155 MPa) in as-deposited evaporated and sputtered films, respectively. Tensile evaporated films fail via brittle fracture during annealing at temperatures below 773 K; thermal limitations are dependent on the film thickness to membrane size aspect ratio. Sputtered films with compressive residual stresses show superior mechanical and thermal stability than evaporated films. Sputtered 1025-μm membranes survive annealing at 773 K, which leads to the generation of tensile stresses and brittle fracture at elevated temperatures (923 K).

Two-dimensional electronic and atomic superstructures (SS) on monolayer graphite (graphene) grown on a clean Ir(111) surface were observed near substrate nano-defect sites by scanning tunneling microscopy. These SS were found rotated 30° with respect to the undistorted areas (away from defects sites) of the graphene layer with a periodicity of and a(a = 2.46 Å)decay over a distance of few nanometers away from the defects. The observed SS were not due to real surface reconstruction, rather they just had an electronic nature.

A tight-binding Ni–Hf potential is constructed by fitting some of the ground-state properties, such as the cohesive energy, lattice constants, and the elastic constants of some Ni–Hf alloys. The constructed potential is verified to be realistic by reproducing some static and dynamic properties of the system, such as the melting points and thermal expansion coefficients for the pure Ni and Hf as well as some of the equilibrium compounds, through molecular dynamics simulation. Applying the constructed potential, molecular dynamics simulations are performed to compare the relative stability of the face-centered-cubic (fcc)/hexagonal close-packed (hcp) solid solutions to their disordered counterparts as a function of solute concentration. It is found that the solid solutions become unstable and transform into the disordered states spontaneously, when the solute concentrations exceed the two critical solid solubilities, i.e., 25 at.% Ni for hcp Hf-rich solid solution and 18 at.% Hf for fcc Ni-based solid solution, respectively. This allows us to determine that the glass-forming ability/range of the Ni–Hf system is within 25–82 at.% Ni. Interestingly, simulations also reveal for the first time, that two mixed regions exist in which an amorphous phase coexists with a crystalline phase, and at about 18 at.% Ni, the hcp lattice turns into a new metastable phase identified to be face-centered orthorhombic structure.

Sequential lateral solidification (SLS) is known to be a promising method to make low-temperature poly-Si thin film transistors (LTPS TFTs) with superior performance for fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display and TFT organic light-emitting diode. The dependence of TFT characteristics on the details of the SLS poly-Si microstructures was studied by varying the size, direction, and shape of the grains by applying different SLS crystallization mask patterns and processing details. The TFTs results demonstrated that various device properties and characteristics are obtained depending on the specifics of the microstructures. Nearly direction-insensitive TFTs of mobility about 300 cm2/V·s (within 5% variation of average value) were successfully fabricated by controlling the microstructures. Such a characteristic is recognized as being desirable for an optimal integration of the peripheral circuits.