In this study, we propose a Se-incorporated Ge10Sb90 as a phase-change material for phase-change memory (PCM) with high reliability and low operation power. We investigated the effect of the Se concentration on the thermal and electrical properties of Se-doped Ge10Sb90 films by varying the Se concentration from 0 to 20 at.%. The crystallization temperature, crystallization activation energy, and maximum ten-year data retention temperature increased with the increasing Se, thus demonstrating the improved thermal stability of Se-doped Ge10Sb90 films with higher Se contents. More Se also increased the rate factor, band gap, threshold voltage, and load resistance. In addition, the crystallization speed, programming window, and resistances of both the amorphous and crystalline states increased with the increasing Se concentration. In contrast, the reset current decreased with the increasing Se concentration. These results demonstrate that Se-doped Ge10Sb90 is a highly promising material for PCM applications.

With the rapid development of electronic information and technology, especially the explosive advance of novel electronic devices, ultra-wideband radar detector and satellite communication, the elimination of adverse electromagnetic waves (EWs) effectively is very necessary both for electronic safety and national defense security. As one of the important material basis for controlling adverse EW pollution, compatibility, shielding, and stealth capability of weaponry, microwave absorbing materials has long been an area of intense research activity. Graphene-based materials have attracted great interests for microwave absorption in recent years due to the unique structure and physicochemical properties of graphene, such as high specific surface area, ultrathin thickness, large interface, optical transmittance, and tunable conductive properties, etc. In this paper, the properties and absorption behavior of different kinds of microwave absorbing materials based on graphene were reviewed and discussed in detail. In addition, the perspective of the current challenges and key issues for achieving better microwave absorption performance of the graphene-based materials are provided.

First-principles calculations are performed to investigate the structural, elastic, and thermodynamic properties of Ni3SnP, Ni2SnP, Ni10SnP3, and Ni2P (here, Ni2P is used for comparison with Ni2SnP). Through calculation, the three ternary Ni–Sn–P intermetallics are all thermodynamic stable but Ni3SnP is elastically unstable. Ni2SnP has the largest degree of elastic anisotropy and is more brittle than Ni2P while Ni10SnP3 is close to be isotropic. The Debye temperature together with the Cahill’s model and Clark’s model are used to investigate the thermal conductivity of the compounds. The Debye temperature follows the sequence of Ni10SnP3 > Ni2SnP > Ni2P. Based on the Clark’s model, the minimum thermal conductivity is ranked as Ni10SnP3 > Ni2P > Ni2SnP which means the heat transfer property of Ni2SnP is lower than Ni2P when the temperature is higher than Debye temperature. The electronic density of states is analyzed. The origin of the elastic anisotropy of Ni2SnP is investigated.

Polycrystalline copper (99.9%) was fatigued at a total strain amplitude of 0.1 and 0.2%, respectively. The tests were performed in situ under vacuum in a Large Chamber-Scanning Electron Microscope. By a repeated combination of in situ fatigue testing and ex situ focused ion beam milling, a deep insight into the mechanism of fatigue crack initiation and early stages of crack initiation at persistent slip bands (PSBs) and their interaction with grain boundaries was obtained. The EBSD-technique showed early slip activation and the exclusive formation of extrusions in favorably oriented grains until a certain extrusion height was reached. At the total strain amplitude of 0.2%, extrusions are formed not only in favorably oriented grains but also in grains with a lower Schmid factor due to high compatibility stresses at the grain boundaries. Extrusion growth through grain boundaries is affected by the orientation of the primary slip systems in the neighboring grains and the additional anisotropy stresses. It is concluded that early stages of crack initiation are the consequence of the formation of extrusions at PSBs in combination with the clustering of vacancies along the PSB boundaries, as it was proposed by the well-known Essmann–Gösele–Mughrabi model.

Magneto polymer matrix composites (MPMC) is a new class of magnetic polymer materials which are being developed and under investigation as potential materials for tomorrow’s aircraft structures. It encompasses magnetic, particulate strengthening (dispersion strengthening) as well as fiber reinforcement/strengthening characteristics which are sought out to be utilized toward making efficient future aerospace composite materials. Various types of ferrites including barium, cobalt, iron, and strontium were explored for being used in making new composites. Here a comprehensive review of the synthesis, structure, properties, thermodynamics, surface chemistry, and phase transformations of individual ferrites and clusters of ferrites as fillers is presented. In particular a discussion about the rational control of the mechanical, physical, thermal, electrical, and magnetic properties of magneto polymer matrix composites through surface functionalization, modification, emulsification/compounding/blending, heat treatment (phase transformation and separation), and control of processing conditions (temperature, pressure and geometry of mold) is provided. These smart materials have a wide range of potential applications in medicine, drug delivery, bio imaging, bio marking, tissue engineering, electromagnetic interference (EMI) and electromagnetic force (EMF) shielding, and as competent materials for aerospace structural applications.

The present status of R&D for various types of solar cells is presented by overviewing research and development projects for solar cells in Japan as the PV R&D Project Leader of the New Energy and Industrial Technology Development Organization (NEDO) and the Japan Science and Technology Agency (JST). Developments of high-efficiency solar cells such as 44.4% (under concentration) and 37.9% (under 1-sun) InGaP/GaAs/InGaAs 3-junction solar cells by Sharp, 26.6% crystalline Si heterojunction back-contact (HBC) solar cells by Kaneka, 22.3% CIGS solar cells by Solar Frontier have been demonstrated under the NEDO PV R&D Project. 15.0% efficiency has also been attained with 1 cm2 perovskite solar cell by NIMS under the JST Project. This article also presents analytical results for efficiency potential of high-efficiency solar cells based on external radiative efficiency (ERE), open-circuit voltage loss and fill factor loss. Crystalline Si solar cells, GaAs, III–V compound 3-junction and 5-junction, CIGSe, and CdTe solar cells have efficiency potential of 28.5%, 29.7%, 42%, 43%, 26.5%, and 26.5% under 1-sun condition, respectively, by improvements in ERE.

The integration of dissimilar materials is highly desirable for many different types of device applications but often challenging to achieve in practice. The unrivalled imaging capabilities of the aberration-corrected electron microscope enable enhanced insights to be gained into the atomic arrangements across heterostructured interfaces. This paper provides an overview of our recent observations of oxide-semiconductor heterostructures using aberration-corrected high-angle annular-dark-field and large-angle bright-field imaging modes. The perovskite oxides studied include strontium titanate, barium titanate, and strontium hafnate, which were grown on Si(001) and/or Ge(001) substrates using the techniques of molecular-beam epitaxy or atomic-layer deposition. The oxide layers displayed excellent crystallinity and sharp, abrupt interfaces were observed with no sign of any amorphous interfacial layers. The Ge(001) substrate surfaces invariably showed both 1× and 2× periodicity consistent with preservation of the 2 × 1 surface reconstruction following oxide growth. Overall, the results augur well for the future development of functional oxide-based devices integrated on semiconductor substrates.

A free standing 2D PS colloidal crystal with Au nanoshells/hydrogel composite film (CAuHCF) was fabricated by embedding a 2D PS colloidal crystal with Au nanoshells into a polyacrylic acid (PAA) hydrogel film. This CAuHCF can act as a visualized sensor with high diffraction intensity. The 2D PS colloidal crystal with Au nanoshells was prepared by depositing an Au layer on PS colloidal crystal obtained by interfacial self-assembly. The diffraction intensity of the CAuHCF was increased by about 30-fold than that of traditional 2D PS colloidal crystal/hydrogel composite film on transparent substrate due to large scattering cross section of Au shell. Such sensors based Au nanoshells array with the simple preparation process and the strong diffraction signal are promising ones for practical applications in visual detection. Additionally, with the simple preparation process and high diffraction intensity, other visualized sensors based different hydrogel matrix and the 2D PS colloidal crystal with Au nanoshells could be synthesized for monitoring various analysts.

Transition metal oxides (TMOs) have recently demonstrated to be a good alternative to boron/phosphorous doped layers in crystalline silicon heterojunction solar cells. In this work, the interface between n-type c-Si (n-Si) and three thermally evaporated TMOs (MoO3, WO3, and V2O5) was investigated by transmission electron microscopy, secondary ion-mass, and x-ray photoelectron spectroscopy. For the oxides studied, surface passivation of n-Si was attributed to an ultra-thin (1.9–2.8 nm) SiOx∼1.5 interlayer formed by chemical reaction, leaving oxygen-deficient species (MoO, WO2, and VO2) as by-products. Carrier selectivity was also inferred from the inversion layer induced on the n-Si surface, a result of Fermi level alignment between two materials with dissimilar electrochemical potentials (work function difference Δϕ ≥ 1 eV). Therefore, the hole-selective and passivating functionality of these TMOs, in addition to their ambient temperature processing, could prove an effective means to lower the cost and simplify solar cell processing.

The spectrally and temporally resolved luminescence of three-dimensional (3D) InGaN/GaN microrods and planar light emitting diode (LED) structures is studied for different energy densities of fs-laser excitation pulses and for different sample temperatures. We find an energy density threshold above which irreversible modifications of the structures take place, which leads to a decrease of the luminescence intensity and a change in the intensity ratio of the GaN to the InGaN luminescence. Due to the quantum confined Stark effect, a biexponential decay characteristic is found in the planar structure, while the 3D microrods with nonpolar InGaN quantum wells on their sidewalls show a monoexponential decay of the InGaN luminescence. For both structures, the decay of the luminescence becomes faster with increasing energy density per pulse. However, the luminescence of the planar LED decays faster with increasing temperature, while the opposite trend is found for the 3D sample.

This manuscript describes, defines, and discusses the process of cold sintering, which can consolidate a broad set of inorganic powders between room temperature and 300 °C using a standard uniaxial press and die. This temperature range is well below that needed for appreciable bulk diffusion, indicating immediately the distinction from the well-known and thermally driven analogue, allowing for an unconventional method for densifying these inorganic powders. Sections of this report highlight the general background and history of cold sintering, the current set of known compositions that exhibit compatibility with this process, the basic experimental techniques, the current understanding of physical mechanisms necessary for densification, and finally opportunities and challenges to expand the method more generically to other systems. The newness of this approach and the potential for revolutionary impact on traditional methods of powder-based processing warrants this discussion despite a nascent understanding of the operative mechanisms.

The research and development of novel photovoltaic technologies is going through a golden era, thanks to the demonstration of remarkable efficiencies across a broad range of semiconductor classes and device architectures. In parallel with these developments, the opportunities for characterizing the structure of a semiconductor film in situ of a processing step have also increased, to the extent that in situ and in operando experiments are becoming readily accessible to researchers. These combined advances represent the subject matter of this article, wherein studies that improve our understanding of structure formation and evolution in perovskite and organic semiconductor films for innovative solar cells are reviewed. Although focus is placed on the dynamics of semiconductor film formation, the review also highlights recent research on environmental testing, a key component in the development of materials with high intrinsic stability.

Mechanical integrity of the interfacial region between ceramic coatings and substrates is critical to high performance coated mechanical components and manufacturing tools. Mechanical failure of the coating/substrate interfacial region often leads to catastrophic failure of the coated system as a whole. Despite extensive research over the past two decades, quantitative assessment of the mechanical response of coating/substrate interfacial regions remains a challenge. The lack of reliable protocols for measuring the mechanical response of coating/substrate interfacial regions quantitatively hampers the understanding of key factors controlling the mechanical integrity of coating/substrate interfaces. In this paper, we describe a new micro-pillar testing protocol for quantitative measurement of critical stresses for inducing shear failure of interfacial regions in ceramic-coating/metal-adhesion-layer/substrate systems. We observe significant differences in the critical stress for shear failure of interfacial regions in CrN/Cu/Si, CrN/Cr/Si, and CrN/Ti/Si systems. The present testing protocol has general applicability to a wide range of coating/interlayer/substrate systems.

The advent of containerless processing techniques has opened the possibility of high quality measurements of equilibrium and metastable liquids. This review focuses on the structure and dynamics of metallic liquids at high temperature. A clear connection between structure, viscosity, and fragility has emerged from recent containerless experiments and molecular dynamics simulation studies. The temperature-dependent changes of liquid structures are smaller for the stronger liquids. The onset of cooperativity usually occurs above the liquidus temperature at a characteristic temperature T A, where the dynamics change from Arrhenius to non-Arrhenius behavior; this is accompanied by the onset of development of more spatially extended structural order in the liquids. Several metrics for fragility, consistent with the traditional fragility parameter, can be developed from the structural and dynamical properties at high temperature. It is becoming increasingly evident from theory and experiments that the fundamental properties that determine fragility are the repulsive part of the interatomic potential and the anharmonicity.

Deformation and structural behavior of an experimental γ′-strengthened Co-base alloy during creep at 800 °C and 196 MPa have been investigated. The characteristic features of this alloy are zero γ/γ′-lattice misfit and a fine γ/γ′-microstructure. In the initial condition, the γ′-precipitates in this alloy are small (size of about 100 nm), have polyhedral morphology, and are separated by the very narrow γ-channels (width of about 10 nm). The tests performed up to about 1% creep strain (about 500 h creep time) gave creep curves with a slow constant strain rate and without an apparent transient creep, typical for superalloys with nonzero misfit. In this initial stage of creep, entering of the narrow γ-channels by dislocations is blocked by a strong Orowan force. The micromechanism of creep was identified as an octahedral glide of 〈011〉 superdislocations simultaneously in two phases, γ and γ′. The γ/γ′-microstructure with zero misfit shows no rafting but rapidly coarsens isotropically. It is concluded that zero misfit is beneficial at the initial stages of the creep but is unfavourable for long-term creep because of the continuous microstructural coarsening.

Atomically thin transition metal dichalcogenides (TMDCs), such as WS2 and MoS2, have opened up new opportunities for the next generation of optoelectronics owing to their unique properties such as optical transparency, high carrier mobility, widely tunable band gap, and strong light–matter interaction. The photodetection performance relies primarily on the light absorption efficiency and separation efficiency of photoexcited electron–holes. The photodetectors with all broadband response, high photoconductive gain, high response speed, and high detectivity is arduous challenge to realize using one photo-active material. Building of photodetectors composed of two or more light absorber materials of different band gaps was an efficient route to realize high performance light detection. The application of a thin sensitizing layer atop the TMDCs has proven to be a viable route to improve the photodetection performance due to the efficient charge separation at the interface, and fast charge transfer process due to the high carrier mobility. In this article, we review the progress made toward hybrid photodetector based on TMDCs with various sensitizers from metal to large band-gap semiconductor in architectures from zero-dimensional quantum dot to two-dimensional crystal.

The codeposition characteristics of Si–B–N ceramics from the SiCl4–NH3–BCl3–H2–Ar system at lower temperatures and phase transformation of as-prepared Si–B–N ceramics at temperatures from 1200 to 1800 °C were investigated. Thermodynamic analysis results indicated that the BN + Si3N4 dual phase region existed from 800 to 1200 °C and that 800 °C was an optimum deposition temperature to deposit Si–B–N ceramic coating. Deposition efficiencies at equilibrium for Si3N4 and BN were high, particularly at temperatures below 1000 °C. Pressure and dilution ratio of H2 had little influence on deposition efficiencies of BN and Si3N4 at 800 °C. The amorphous Si–B–N ceramic coatings were successfully deposited at 800 °C from the same precursor system and contained N–B and N–Si bonds by XPS analysis. It kept amorphous below 1600 °C in N2 and partly transformed to α/β-Si3N4 when heat treated at 1600 °C in N2 for 2 h. These results demonstrated that the composite Si–B–N ceramics could be fabricated at 800 °C and used below 1600 °C.

MoS2(1−x)Te2x thin films were fabricated by high-temperature co-sputtering deposition and post-deposition tellurization annealing using novel Te precursor (i-C3H7)2Te for the first time. As a result, high crystal quality MoS2(1−x)Te2x (6.5 nm) were successfully fabricated with the Te concentration x ranging from 0.48 to 0.61 and band gap value from 0.80 to 0.87 eV. From the obtained band gap values of MoS2(1−x)Te2x , the bowing parameter b was determined to be 1.06 eV. When exploited in device use, if the required band gap value is known, the required composition can be calculated with the bowing parameter. We have also shown the compatibility of co-sputtering to alloy fabrication since the composition ratio can be easily controlled just by adjusting the radio frequency (RF) sputter power on different targets. The fabrication method can be applied to different transition metal dichalcogenide materials as well.