Highly in-plane aligned α-axis YBa2Cu3O7−x thin films deposited on (100) LaSrGaO4 substrates by a self-template method were studied by high-resolution electron microscopy along three orthogonal 〈100〉 axes of the substrate. Plan-view images confirm that the majority of the film preferentially aligns across the entire substrate except for very few misaligned domains with average size 10 nm2. Cross-sectional images along the [100] orientation of YBa2Cu3O7−x reveal that in-plane aligned α-axis YBa2Cu3O7−x is grown on a template layer dominated by c-axis oriented film. This strongly suggests that the in-plane alignment of α-axis YBa2Cu3O7−x thin films on (100) LaSrGaO4 substrates is governed by the different stresses along the b and c axes of the substrate. Cross-sectional images along [001] of the YBa2Cu3O7—x thin film reveal that the 90° domains easily nucleate in the region between α-axis YBa2Cu3O7—x and the YBa4Cu3Ox phase. Cracks along the (001) plane of YBa2Cu3O7−x are found to be due to the large mismatch between the c parameters of the thin film and substrate.

A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.

A new designed reaction chamber with new relative distribution of filament and substrates has been adopted in order to increase the deposition area of diamond films and thus increase the deposition efficiency in conventional hot filament chemical vapor deposition (HFCVD) systems. The relatively small reaction chamber was cuboid shaped (50 × 25 × 25 mm3) and composed of molybdenum wafers. It was established in the vacuum chamber. A tungsten filament was hung up vertically in the center of the small chamber and parallel to the gas flow path. At the four inner sides of the reaction chamber, four Si(100) substrates (30 × 10 × 0.5 mm3) were installed to grow diamond films. The deposition results indicate that uniform diamond films can be obtained on the four substrates, and the film growth rate is the same at both ends of the substrates. The diamond film growth rate was about 1−2 μm/h, which is similar to those of the conventional HFCVD method. Thus, the deposition area and efficiency can be increased four times in the case without the filament number, gas flow rate, and power consumption.

The HOMO-LUMO gaps have been estimated in a graphite-like sp2 carbon network with a progressive increase in the fraction of sp3 carbons, taking into account several possible structural alternatives for each composition. The gap is shown to increase exponentially with the fraction of sp3 carbons. Accordingly, the gap in a diamond-like sp3 network decreases with the increase in the fraction of sp2 carbons.

A new semiempirical formula is developed for the hardness determination of the materials from depth sensing indentation tests. The indentation works measured both during loading and unloading periods are used in the evaluation. The values of the Meyer hardness calculated in this way agree well with those obtained by conventional optical observation, where this latter is possible. While the new hardness formula characterizes well the behavior of the conventional hardness number even for the ideally elastic material, the mean contact pressure generally used in hardness determination differs significantly from the conventional hardness number when the ideally elastic limiting case is being approached.

The feasibility of synthesizing silicon nitride-silicon carbide-titanium carbonitride composites by combustion reactions is demonstrated. With titanium carbonitride taken to be an ideal solid solution, its composition is determined as TiC0.36N0.64. Thermodynamic analysis supports the experimental results.

The growth process of a YBCO/LaAlO3/YBCO trilayered film made by pulsed laser deposition has been studied by high resolution transmission electron microscopy (HRTEM). The high resolution images of the cross-section samples have shown that a 7 nm layer of LaAlO3 has been grown epitaxially between c-axis oriented YBCO layers having the nominal thickness of 250 nm. A stacking fault in the LaAlO3 layer may introduce a stacking fault into the YBCO layer, which may form nucleation sites for α-axis oriented grains. A second phase had been formed at the interface between the LaAlO3 layer and the lower YBCO layer, which has been identified by image simulation and energy dispersive x-ray (EDX) analysis as a new tetragonal La–Al–Cu–O phase based on LaAlO3 in which some of Al atoms have been replaced by Cu. The approximate lattice parameters of the new phase are a = 0.38 nm and c = 0.76 nm. However, no second phase was found at the interface between the lower YBCO layer and the LaAlO3 substrate.

Directional solidification has been shown to be a successful way of achieving high current densities in bulk YBCO. The lack of understanding of the growth kinetics, however, makes it difficult to fabricate longer samples and reduce the processing times. To study the growth kinetics, quenching experiments of undoped YBa2Cu3O7−x (Y-123) and Y-123 doped with Pt and Nd from above the peritectic temperature with different holding times, t, were conducted. The results of these experiments indicate that the average 211 particle size varies at t1/3. Growth rate experiments were also conducted on these samples to determine the maximum growth rate for plane front solidification, Rmax. This quantity was measured for undoped and doped Y-123, and it was found that the addition of Pt did not increase Rmax while the addition of Nd doubled the growth rate. Using the coarsening results together with the growth rate experiments, the diffusivity of Y in liquid and the 211-liquid interfacial energy for undoped and doped Y-123 were calculated.

The microstructure of large grain melt-processed YBa2Cu3O7−δ containing 10 molar% excess Y2BaCuO5 prepared and oxygenated under atmospheric pressure has been investigated by transmission electron microscopy (TEM) and optical microscopy. These materials always contain parallel structural and microscopic platelet-like features in the crystallographic a-b plane of a few microns spacing which have been variously described as grain boundaries or microcracks. We have observed such features, which clearly influence the flow of current in melt-processed YBCO, to consist of copper deficient, impurity phase material which can be either amorphous or crystalline in nature. A variety of defects have been observed by high-resolution electron microscopy (HREM) in the vicinity of these platelet boundaries, including double and triple CuO layer stacking faults, which may constitute effective flux pinning sites.

X-ray single crystal diffraction data were used for structural refinement of the title compounds with different x (0.15, 0.27, 0.49, and 0.89). Crystals were grown in alumina crucibles using the self-flux method. Aluminum, which originates from the crucibles, substitutes only Cu(1), and thus induces tetragonal symmetry which was observed in all four crystals. The main structural effect of praseodymium is an increased separation of superconducting layers. Substituent concentrations (x and y in the formula) have been refined and compared with the values obtained by EDX (energy dispersive x-ray analysis) in an electron microscope. It was indicated that the refined values of Y: Pr ratio and the oxygen content are more reliable than those obtained by EDX while the refinement is less sensitive for Cu(1): Al ratio, and this value is more uncertain. This is in accordance with the result of wet chemical analysis.

Compounds of the general formula M(SR)2 (M = Zn, Cd; R = i-Pr, t-Bu, Bz) have been prepared and explored as potential unimolecular starting materials for the preparation of binary group 12 metal sulfides. These new compounds have been characterized by IR spectroscopy and thermogravimetric analysis. Chemical derivatization of these insoluble metal-bis(thiolate) compounds by complexation with N-CH3 -imidazole renders them more soluble. These adducts were investigated by elemental analysis. Thermolytic decompositions of both the parent and derivatized compounds have been carried out both in the solid state and by heating a suspension of the appropriate metal-bis(thiolate) compound in an inert high boiling hydrocarbon medium. The thermolysis products have been studied by GC/MS (liquids) and x-ray powder diffraction (XRPD), scanning electron microscopy (SEM), and particle size determination (solids).

X-ray photoelectron spectroscopy (XPS) coupled with Fourier transform infrared (FTIR) and optical transmission spectroscopy (OTS) has been used for the characterization of silicon-carbon alloys (a-Si1−xCx: H, F) deposited via plasma, by varying the CH4 amount in SiF4–CH4–H2 feeding mixture. XPS measurements have shown that carbon-rich a-Si1−xCx: H, F alloys include large amounts of fluorine (>11 at. %), which make the films susceptible to the air oxidation. In addition, the effect of the alloying partner carbon on the valence band (VB) and on the VB edge position of amorphous silicon is also described.

Six near stoichiometric, NiAl single-crystal alloys, with 0.05−1.5 at.% of Hf and Zr additions plus Si impurities, were microstructurally analyzed in the as-cast, homogenized, and aged conditions. Hafnium-rich interdendritic regions, containing the Heusler phase (Ni2AlHf), were found in all the as-cast alloys containing Hf. Homogenization heat treatments partially reduced these interdendritic segregated regions. Transmission electron microscopy (TEM) observations of the as-cast and homogenized microstructures revealed the presence of a high density of fine Hf (or Zr) and Si-rich precipitates. These were identified as G-phase, Ni16X6Si7, or as an orthorhombic NiXSi phase, where X is Hf or Zr. Under these conditions the expected Heusler phase (β′) was almost completely absent. The Si responsible for the formation of the G and NiHfSi phases is the result of molten metal reacting with the Si-containing crucible used during the casting process. Varying the cooling rates after homogenization resulted in the refinement or complete suppression of the G and NiHfSi phases. In some of the alloys studied, long-term aging heat treatments resulted in the formation of Heusler precipitates, which were more stable at the aging temperature and coarsened at the expense of the G-phase. In other alloys, long-term aging resulted in the formation of the NiXSi phase. The stability of the Heusler or NiXSi phases can be traced to the reactive element (Hf or Zr) to silicon ratio. If the ratio is high, then the Heusler phase appears stable after long time aging. If the ratio is low, then the NiHfSi phase appears to be the stable phase.

X-ray diffraction (XRD) and Raman spectroscopy have been used for the study of the bi-intercalation of SbCl5 into a stage 5 FeCl3-graphite intercalation compound (GIC). The stage 5 FeCl3-GIC is prepared by an ordinary two-bulb method with the temperature of graphite at 788 K and that of FeCl3 at 573 K. The FeCl3-SbCl5-graphite bi-intercalation compound (GBC) with one SbCl5 layer is obtained when the temperature of the stage 5 FeCl3-GIC is held at 443 K and the temperature of SbCl5 at 373 K in the two-zone system. The stacking sequence of the GBC is found to be an admixture of G(FeCl3)GG(SbCl5)GGG(FeCl3)G and G(FeCl3)GGG(SbCl5)GG(FeCl3)G by XRD, where G, (FeCl3), and (SbCl5) are the graphite, FeCl3, and SbCl5 layers, respectively. The Raman spectrum of the GBC shows two peaks associated with the and modes at 1588 cm−1 and 1610 cm−1, respectively. For the temperatures of stage 5 FeCl3-GIC at 443 K and SbCl5 at 403 K in the two-zone system, the FeCl3-SbCl5-GBC with two SbCl5 layers is obtained. The stacking sequence of the GBC is determined to be an admixture of G(FeCl3)GG(SbCl5)GG(SbCl5)G(FeCl3)G and G(FeCl3)G(SbCl5)GG(SbCl5)GG(FeCl3)G In the Raman spectrum of this GBC, two peaks associated with the mode are observed at 1616 and 1624 cm−1.

Ceramic (Ca1−xSrx)2PbO4 samples have been prepared with x = 0.00, 0.25, 0.50, 0.75, and 1.00 in order to study the change in lattice constants with the ratio of Ca/Sr. This phase is frequently an intermediate phase in the fabrication of Bi–Sr–Ca–Cu–O superconductors, and it is important to connect the lattice constants with stoichiometry. The behavior of the lattice constants closely follows Vegard's law.

The sheets of uranyl ions (U6+O2)2+ in the structures of all uranyl oxide hydrates (UOH) (and the structurally related α- and β-forms of U3O8) are based on only four structural unit chains. Each sheet type may be reduced to its underlying sheet anion topology to determine the chains present within each topology and to describe the structural relationships among these phases. Each sheet type is described by a chain stacking sequence. The four chain types required to construct the UOH sheet anion topologies are the H-chain, the R-chain, the P-chain, and the directional “arrowhead” chains denoted by U and D. The H-chain is found only in the sheet anion topology of α-UO2(OH)2 and consists of hexagonal sites sharing opposing edges. In α–UO2(OH)2, all hexagons are populated with uranyl ions. The “arrowhead” chain is composed of pentagonal sites populated with uranyl ions and sharing edges and alternating with vacant triangular sites. Arrowhead chains are present in the sheet anion topologies of all other UOH sheets. Arrowhead chains are directional and can occur in both U and D “senses” within a single anion topology. The P-chain consists of edge-sharing pentagonal sites populated with uranyl ions forming a zigzag chain. The P-chain is flanked on both sides by arrowhead chains of the same “sense”. The remaining structural unit is a discontinuous “chain” of rhombic sites. This “R-chain” is produced when nested; adjacent U and D “arrowhead” chains are translated diagonally. The R-chain occurs in the sheet anion topologies of sheets which contain only 4-coordinate uranyl ions and those containing both 4- and 5-coordinate uranyl ions. The rhombic sites may be populated with a uranyl ion, a U4+ or other cation and two apical oxygens, or they may be vacant.

Short surface cracks were generated by Vickers indentation on the polished surface of alumina and different zirconia toughened alumina (ZTA) specimens, and their morphology was studied by serial sectioning. These cracks were grown in three-point bend tests under stepwise loading, and variation of toughness with crack extension was plotted to graphically separate the contributions from residual stress intensity and applied stress intensity factors. The plateau toughness determined from the intercept height of the crack extension plots exhibited an upward trend with zirconia content up to 15 vol % ZrO2 addition in the composition, which was proportional to the fraction of transformable tetragonal grains contributing to transformation toughening.

The addition of BaTiO3 to Pb(Ni1/3Nb2/3)O3 has been confirmed to vary the formation kinetics of the perovskite solid solutions of Pb(Ni1/3Nb2/3)O3-BaTiO3, and to suppress the generation of the pyrochlore phase. A semiquantitatively calculated reaction conversion verified that increasing the BaTiO3 content significantly accelerated the formation of the perovskite solid solutions. The formed solid solutions of Pb(Ni1/3Nb2/3)O3-BaTiO3 (up to 90 mol% of BaTiO3) exhibited a cubic symmetry at room temperature. The lattice parameter monotonously decreased with an increase in the BaTiO3 content. The structural stability of the perovskite phase was found to be enhanced by the addition of BaTiO3 as well. The formed solid solutions were able to maintain the perovskite structure without decomposition when heated up to 1250 °C. The frequency dependence of the apparent Curie temperature and the diffuseness of the dielectric peak of sintered specimens were increased with increasing the BaTiO3 content up to 50 mol%. Whereas with further addition, the relaxor characteristics in the specimens became obscure, associated with lower frequency dependence and less broadening of the dielectric maximum. The largest broadening of the dielectric peak occurred at x = 0.5, implying that this composition exhibited the most disordered structure, which is probably related to the most random arrangement of B-site cations in oxygen octahedran.

Density, grain size, lattice parameter, and dielectric properties were measured on BaTi0.8Zr0.2O3 sintered at 1100–1600 °C. The hydrothermally prepared BaTi0.8Zr0.2O3 particles of 128 nm diameter were consolidated by filtration of 2-methoxyethanol suspensions and subsequently compressed by isostatic pressing under a pressure of 294 MPa to form a uniform microstructure of high density (52% of the theoretical density). These green compacts were sintered to a relative density of above 99% in the temperature range from 1350 to 1600 °C where rapid grain growth to above 30 μm occurred. Increase of sintering temperature was accompanied by the increase of lattice parameter and dielectric constant of BaTi0.8Zr0.2O3 at room temperature. The sintered BaTi0.8Zr0.2O3 showed a diffuse phase transition from paraelectric (higher temperature) to ferroelectric state (lower temperature) at 32 °C.

The isopropyl alcohol gas sensitivity of LaCrO3 at 250 °C is found to depend on the amount of TiO2 content and cation stoichiometric ratio of the sample. The gas sensitivity enhancement is related to the defect structure and electrical conduction behavior of p-type, donor-doped semiconductive oxides. The high resistivity coupled with the increasing point defects by the donor dopants are responsible for the high gas sensitivity of TiO2 doped LaCrO3. It is believed that the positively charged ionic-type defects created by dopants act as trapping sites to adsorb oxygen.