Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T04:54:56.506Z Has data issue: false hasContentIssue false

Microstructural study of growth of a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x trilayered film by pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

Y. H. Li
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
A. Staton-Bevan
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
J. A. Kilner
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
Z. Trajanovic
Affiliation:
Department of Physics, University of Maryland, College Park, Maryland 20742
T. Venkatesan
Affiliation:
Department of Physics, University of Maryland, College Park, Maryland 20742
Get access

Abstract

The growth process of a YBCO/LaAlO3/YBCO trilayered film made by pulsed laser deposition has been studied by high resolution transmission electron microscopy (HRTEM). The high resolution images of the cross-section samples have shown that a 7 nm layer of LaAlO3 has been grown epitaxially between c-axis oriented YBCO layers having the nominal thickness of 250 nm. A stacking fault in the LaAlO3 layer may introduce a stacking fault into the YBCO layer, which may form nucleation sites for α-axis oriented grains. A second phase had been formed at the interface between the LaAlO3 layer and the lower YBCO layer, which has been identified by image simulation and energy dispersive x-ray (EDX) analysis as a new tetragonal La–Al–Cu–O phase based on LaAlO3 in which some of Al atoms have been replaced by Cu. The approximate lattice parameters of the new phase are a = 0.38 nm and c = 0.76 nm. However, no second phase was found at the interface between the lower YBCO layer and the LaAlO3 substrate.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Lee, L.P., Char, K., Colclough, M.S., and Zaharchuk, G., Appl. Phys. Lett. 59, 3051 (1991).CrossRefGoogle Scholar
2.Miklich, A.H., Kingsten, J.J., Wellstood, F.C., Clark, J., Colclough, M.S., Char, K., and Zaharchuk, G., Appl. Phys. Lett. 59, 988 (1991).Google Scholar
3.Pond, J. M., Carroll, K.R., Horwitz, J.S., Chrisey, D.B., Osofsky, M.S., and Cestone, V.C., Appl. Phys. Lett. 59, 3033 (1991).CrossRefGoogle Scholar
4.Chim, D.K. and Van Duzer, T., Appl. Phys. Lett. 58, 753 (1991).CrossRefGoogle Scholar
5.Michikami, O. and Asahi, M., Jpn. J. Appl. Phys. 30, 466 (1991).CrossRefGoogle Scholar
6.Lee, A.E., Burch, J.F., Simon, R.W., Luine, J.A., Hu, R., and Schwarzbek, S.M., IEEE Trans. Magn. MAG-27, 1365 (1991).CrossRefGoogle Scholar
7.Wang, S.Z., Olsson, E., Alarco, J.A., Ivanov, Z.G., Winkler, D., Langer, V., and Berastegui, P., J. Appl. Phys. 73, 7543 (1993).Google Scholar
8.Brorsson, G., Nilsson, P.A., Olsson, E., Wang, S.Z., Claeson, T., and Lofgren, M., Appl. Phys. Lett. 61 486 (1992).CrossRefGoogle Scholar
9.Rauch, W., Behner, H., Gieres, G., Sipos, B., Seebock, R.J., Eibl, O., Kerner, R., Solkner, G., and Gornik, E., Appl. Phys. Lett. 60, 3304 (1992).Google Scholar
10.Simon, R.W., Platt, C.E., Lee, A.E., Lee, G.S., Daly, K.P., Wire, M.S., and Luine, J.A., Appl. Phys. Lett. 53, 2677 (1988).CrossRefGoogle Scholar
11.Trajanovic, Z., Senapati, L., Sharma, R.P., and Venkatesan, T., Appl. Phys. Lett. 66, 2418 (1995).CrossRefGoogle Scholar
12.Demazeau, G., Parent, C., Pouchard, M., and Hagenmuller, P., Mater. Res. Bull. 7, 913 (1972).CrossRefGoogle Scholar
13.Stadelmann, P. A., Ultramicroscopy 21, 131 (1987).CrossRefGoogle Scholar
14.Li, Y.H., Chen, Z., and Loretto, M.H., J. Microsc. 170 259 (1993).CrossRefGoogle Scholar
15.Li, Y.H., Leach, C., and Quincey, P., J. Mater. Sci. Lett. 14, 670 (1995).CrossRefGoogle Scholar