This paper outlines an original shape optimization library backed by a three dimensional (3D) full-wave electromagnetic (EM) simulator, combining several efficient structural optimization techniques and suitable for viable computer-aided design (CAD) of complex microwave components. The microwave components are modeled by finite element method (FEM) and their dimensions and shape are optimized using four techniques: design of experiments (DOE), level-set method (LS), topology gradient (TG) method, and genetic algorithm (GA). The various methods allow determining the optimal geometry, shape or topology of 2D or 3D objects within the microwave device, by minimizing iteratively a cost function related to the desired specifications. Typical demonstration illustrates the versatility of the proposed library based on the design of a dual mode dielectric resonator filter in order to improve its unloaded quality factor by keeping the same frequency isolation, their accuracy and efficiency are verified by the available measured results.

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

An optoelectronic oscillator (OEO) under the influence of a weak interference has been investigated. The system equation of the OEO under the influence of interference has been derived. A novel technique for calculating the lock range of the oscillator using the harmonic balance method in presence of interference has been demonstrated. Theoretical analysis coupled with experimental results has been presented.

This paper presents a radio frequency micro-electro-mechanical-systems (RF MEMS) fabrication process based on a stacked structural layer and Au–Au thermocompression bonding, and reports on the performance of a sample RF MEMS switch design implemented with this process. The structural layer consists of 0.1 µm SiO2/0.2 µm SixNy/1 µm Cr–Au layers with a tensile stress less than 50 MPa deposited on a silicon handle wafer. The stacked layer is bonded to a base wafer where the transmission lines and the isolation dielectric of the capacitive switch are patterned. The process flow does not include a sacrificial layer; a recess etched in the base wafer provides the air gap instead. The switches are released by thinning and complete etching of the silicon handle wafer by deep reactive ion etching (DRIE) and tetramethylammonium hydroxide (TMAH) solution, respectively. Millimeter-wave measurements of the fabricated RF MEMS switches demonstrate satisfactory up-state performance with the worst-case return and insertion losses of 13.7 and 0.38 dB, respectively; but the limited isolation at the down-state indicates a systematic problem with these first-generation devices. Optical profile inspections and retrospective electromechanical analyses not only confirm those measurement results; but also identify the problem as the curling of the MEMS bridges along their width, which can be alleviated in the later fabrication runs through proper mechanical design.

Ultra-compact band-pass filters with Nth-order pseudoelliptic response are presented allowing dramatic volume and mass savings (up to about 90%) compared to conventional filters at the price of a modest Q-factor reduction. TM dual-mode cavities loaded with high-permittivity (εr > 30) ceramic cylinders are employed, while non-resonating modes are used to create N transmission zeros symmetrically or non-symmetrically located in the pass-band. A single cavity behaves as a generalized doublet generating two transmission poles and two transmission zeros and is used as a basic building block for N-pole and N-zero filters with symmetric or asymmetric response. To prove the effectiveness of the approach, a very compact fourth-order filter with 4.35 GHz center frequency, four transmission zeros has been designed, fabricated, and tested showing an unloaded Q close to 2000. It is finally shown that the filter response can be shifted in frequency by simply replacing the dielectric material with another having different εr, so that the same metal enclosure can be used to realize various filters operating at different frequency bands.

This paper presents a band-notched ultra-wideband bandpass filter by loading a short stub and an asymmetric step impedance stub in a uniform impedance resonator. The passband extends from 3.04 to 10.8 GHz frequency. The multimode resonator provides a sharp band edge with measured transmission zeros at 2.59 and 13 GHz. The later one is due to source load coupling. The passband insertion loss is within 1.5 dB. The embedded spiral resonator introduces a notch at 5.25 GHz with attenuation of 15 dB. The filter exhibits a wide stop band till 15 GHz. The in band and out of band performance obtained from full-wave electromagnetic simulation and measurement are in close agreement.

The silicon/porous silicon (PS) hybrid substrate is an interesting candidate for the monolithic integration of radiofrequency (RF) circuits. Thus, passive components can be integrated on the insulating PS regions close to the active devices integrated on silicon. Regarding silicon, hybrid substrates allow the improvement of RF circuits performances. To demonstrate it, coplanar waveguides have been integrated on glass, silicon, and localized PS substrates. The characterization results show that the substrate losses are reduced with PS.

In this paper, the concept of load-modulated power amplifiers (PAs) is studied. Two GaN-HEMT power amplifiers (PAs), targeted for high efficiency at maximum and output back-off (OBO) power levels, are designed, implemented, and tested across 1.8–2.2 GHz. The load modulation in the first design is realized by tuning the shunt capacitors in the output matching network. A novel method is employed in the second design, where barium–stronrium–titante is used for the realization of load modulation. The large-signal measurement results across the desired band show 59–70% drain efficiency at 44–44.5 dBm output power for both designs. Using the available tunable technique, the drain efficiency of the PAs is enhanced by 4–20% at 6 dB OBO across the bandwidth.

This paper presents a method for automatic construction of stable and passive scalable macromodels for parameterized frequency responses. The method requires very little prior knowledge to build the scalable macromodels thereby considerably reducing the burden on the designers. The proposed method uses an efficient scattered sequential sampling strategy with as few expensive simulations as possible to generate accurate macromodels for the system using state-of-the-art scalable macromodeling methods. The scalable macromodels can be used as a replacement model for the actual simulator in overall design processes. Pertinent numerical results validate the proposed sequential sampling strategy.

This paper reports on the ohmic contacts of an radio-frequency micro-electro-mechanical-system (RF MEMS) switch. The structure of the MEMS is described briefly to give information about the organization of the switch device. The most significant performance data are reported, indicating very low actuation voltage below 5 V, switching time of <10 µs and good RF performance for frequencies up to 5 GHz. Since the contact performance is a key for excellent RF performance in the actuated state and for high reliability as well the article is focused on the contacts. It is supposed that asperities are building the current path in a closed contact, which is proved by measurements of the closing process with high time resolution. The measurements exhibit very good power-handling capabilities of the contacts. The reported findings render prior theoretical experiments with a physical device.

This paper presents an optimization circuit model of multiconductor transmission lines in the time domain. Several methods allow calculation of the currents and the tensions distributed on the uniform transmission line. Most of these methods are limited to lines with constant losses, and only for linear loads. The macro-model we propose, using Pade approximant, employs more variables and allows it to reduce the necessary cells' number in modelization than the traditional cells cascade method. This macro-model, using the Modified Nodal Analysis method (MNA), is suitable for an inclusion in circuit simulator, such as Esacap, Spice, and Saber. The MNA method offers an efficient means to discretize transmission lines on real and complex cells compared to the conventional lumped discretization. In addition, the model can directly handle frequency-dependent line parameters in the time domain. An example, with experimental measures taken from literature, is presented to validate the model we propose, and show its importance. It is necessary for assuring the results validity obtained from Pade macro-model to study its stability and passivity.

This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable matching networks for a multi-band gallium nitride (GaN) power amplifer (PA) application. In the frequency range from 3.5–8.5 GHz return losses of 5–10 dB were measured for the input network, matching impedances close to the border of the Smith chart. For the output matching network return losses of 10–20 dB and insertion losses of 1.3–2 dB were measured. The matching networks can tune the PA to four different operating frequencies, as well as changing the transistor's mode of operation from maximum delivered-output-power to maximum power-added-efficiency (PAE), while keeping the operating frequency constant. Furthermore, different single pole double throw (SPDT)-switches are designed and characterized, to be used in frequency-agile transmit/receive-modules (T/R modules).

A novel coplanar waveguide fed Industrial, Scientific, and Medical (ISM) band implantable crossed-type triangular slot antenna is proposed for biomedical applications. The antenna operates at the center frequency of 2450 MHz, which is in ISM band, to support GHz wideband communication for high-data rate implantable biomedical application. The size of the antenna is 78 mm3 (10 mm × 12 mm × 0.65 mm). The simulated and measured bandwidths are 7.9 and 8.2% at the resonant frequency of 2.45 GHz. The specific absorption rate distribution induced by the implantable antenna inside a human body tissue model is evaluated. The communication between the implanted antenna and external device is also examined. The proposed antenna has substantial merits such as miniaturization, lower return loss, better impedance matching, and high gain over other implanted antennas.

This paper presents a novel miniaturized substrate integrated waveguide filter by combining both half-mode resonators and capacitive loading on a conventional two-layer printed circuit board (PCB) process. The resulting synthesis is successfully demonstrated in an long-term evolution application by means of a third-order filter of <225 mm2 in size while featuring 2.3 dB insertion loss over a 5.5% fractional bandwidth at 3.7 GHz. Good first-iteration agreement between simulated and measured results, both in center frequency and bandwidth, are achieved.

This paper presents the work carried out to assess the feasibility of miniature directive antennas. It is based on an analysis of the physical limits of antenna directivity in general and in particular as a function of their compact dimensions. A state of the art is done to identify and classify techniques to increase the directivity of compact antennas.

In this paper, a uniplanar RF-MEMS second-order bandpass filter with reconfigurable center frequency is presented. It is based on quarter-wavelength slotline resonators and coplanar waveguide (CPW)-to-slotline multimodal immitance inverters (MIIs), which are reconfigured using RF-MEMS switchable CPW air-bridges (SABs). The filter can be adequately explained and designed using multimodal theory and circuit models. A surface micromachining process on high-resistivity silicon substrate was used to fabricate the filter. Experimental results show frequency reconfiguration from 12 to 13 GHz, maintaining the same relative bandwidth, and insertion losses of 4.6 and 4.7 dB, respectively.

In this paper, a new multi-layered triple-passband bandpass filter using embedded and stub-loaded stepped impedance resonators (SIRs) is proposed. The filter is designed to have triple-passband at 1.8, 2.4, and 3.5 GHz. The 1st and 2nd passbands (1.8/2.4 GHz) are simultaneously generated by controlling the impedance and length ratios of the embedded SIRs (on top layer). The 3rd passband (3.5 GHz) is generated by using the stub-loaded SIR (on bottom layer). Using the embedded SIR, the even modes can be tuned within very wide frequency range and without affecting the odd modes. Therefore, the design of multi-band filters with very close passbands can be easily achieved and having a high isolation between the passbands. The filter can provide the multi-path propagation to enhance the frequency response and achieving the compact circuit size. The measured results are in good agreement with the full-wave electromagnetic simulation results.

This paper presents the design and development of an X-band microstrip gap-coupled sectoral patch array antenna for application in wireless systems. A novel concept of bandwidth enhancement is considered for gap-coupled sectoral microstrip patch array antenna, which uses one active receiving antenna and multiple parasitic elements with finite ground plane. The parasitic elements give the possibility of creating a directive antenna beam. A broadband of 1 GHz with a return loss of −50 dB has been achieved in X-band along with a directivity of 11.1 dBi and reduced side lobe level to −23.7 for 3 dB angular width.

A design of low mutual coupling between two microstrip patch antennas for multi input multi output antenna is presented. The two antenna elements operate at 5.8 GHz for wireless applications. The reduction of mutual coupling between the antenna elements is achieved by using a defected ground structure (DGS). The DGS is inserted between the microstrip patch antenna elements to limit the surface waves between them. The separation between the edges of the two elements has been achieved to be only 0.058λ0. The analysis of the correlation coefficient, diversity gain and total active reflection coefficient is presented to validate the performance of the multiple-input–multiple-output (MIMO) antenna. The isolation of the proposed MIMO antenna is 28 dB at 5.8 GHz and the envelope correlation equals 0.003. Owing to these good performances each antenna can operate almost independently. A good agreement is achieved between the simulated and the measured results.

A high-directivity switched-beam antenna in the V-band is presented and includes a circularly-polarized transmit-array realized in a low-cost printed technology associated with a focal source array integrated on high-resistivity silicon. The measurements show a maximum gain of 12.1 dBi, a 3-dB gain-bandwidth of 57.8–70 GHz, and an axial ratio below 5 dB. The antenna exhibits five beams pointing from −22° to +23° in one plane, its size of 25 × 25 × 10 mm3 is compatible with the integration in different multimedia communication devices.