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Study of porous silicon substrates for the monolithic integration of radiofrequency circuits

Published online by Cambridge University Press:  13 December 2013

Marie Capelle ,
Jérome Billoué ,
Patrick Poveda  and
Gael Gautier
Marie Capelle
Affiliation:
GREMAN, Université François Rabelais, 16 Rue Pierre et Marie Curie, 37071 Tours, France STMicroelectronics, 16 rue Pierre et Marie Curie, 37071 Tours, France
Jérome Billoué*
Affiliation:
GREMAN, Université François Rabelais, 16 Rue Pierre et Marie Curie, 37071 Tours, France
Patrick Poveda
Affiliation:
STMicroelectronics, 16 rue Pierre et Marie Curie, 37071 Tours, France
Gael Gautier
Affiliation:
GREMAN, Université François Rabelais, 16 Rue Pierre et Marie Curie, 37071 Tours, France
*
Corresponding author: J. Billoué Email: [email protected]
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Abstract

The silicon/porous silicon (PS) hybrid substrate is an interesting candidate for the monolithic integration of radiofrequency (RF) circuits. Thus, passive components can be integrated on the insulating PS regions close to the active devices integrated on silicon. Regarding silicon, hybrid substrates allow the improvement of RF circuits performances. To demonstrate it, coplanar waveguides have been integrated on glass, silicon, and localized PS substrates. The characterization results show that the substrate losses are reduced with PS.

Keywords

Si-based devices and IC technologiesNew and emerging technologies and materials
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 1: IJMWT Special Issue on the 2013 National Microwave Days in France , February 2014 , pp. 39 - 43
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

REFERENCES

[1]Balagurov, L.A.: Electronic transport in porous silicon of low porosity made on a p+ substrate. Mater. Sci. Eng. B, 69–70 (2000), 127.Google Scholar
[2]Yu, V.: Timoshenko: free charge carriers in mesoporous silicon. Phys. Rev. B, 64 (8) (2001), 1.Google Scholar
[3]Ben-Chorin, M.: Hopping transport on a fractal: ac conductivity of porous silicon. Phys. Rev. B, 51 (4) (1995), 2199.CrossRefGoogle ScholarPubMed
[4]Issa, H.: On-chip high-performance millimeter-wave transmission lines on locally grown porous silicon areas. IEEE Trans. Electron Devices, 58 (11) (2011), 3720.CrossRefGoogle Scholar
[5]Capelle, M.: RF performances of inductors integrated on localized p+-type porous silicon regions. Nanoscale Res. Lett., 7 (2012), 523.CrossRefGoogle ScholarPubMed
[6]Sarafis, P.: Dielectric permittivity of porous Si for use as substrate material in Si-integrated RF devices. IEEE Trans. Electron Devices, 60 (4) (2013), 1436.CrossRefGoogle Scholar
[7]Lee, J.S.: MCM technology for RF tunable band pass filters implemented by integration of GaAs FETs and selectively oxidized porous silicon (SOPS), in IEEE, Electronic Components & Technology Conf., 2010, 426.Google Scholar
[8]Chong, K.: Low capacitance and high isolation bond pad for high-frequency RFICs. IEEE Electron Device Lett., 26 (10) (2005), 746.Google Scholar
[9]Kim, H.S.: Effective crosstalk isolation through p+ Si substrates with semi-insulating porous Si. IEEE Electron Device Lett., 23 (3) (2002), 160.Google Scholar
[10]Hedrich, F.: Structuring of membrane sensors using sacrificial porous silicon. Sens. Actuators A, 84 (3) (2000), 315.CrossRefGoogle Scholar
[11]Brumhead, D.: Gravimetric analysis of pore nucleation and propagation in anodised silicon. Electrochim. Acta, 38 (2) (1993), 191.CrossRefGoogle Scholar
[12]Defforge, T.: Plasma deposited fluoropolymer film mask for local porous silicon formation. Nanoscale Res. Lett., 7, (2012), 344.CrossRefGoogle ScholarPubMed
[13]Astrova, E.V.: Anisotropy effects in electrochemical etching of p+-Si. J. Electrochem. Soc., 159 (3) (2012), D172.CrossRefGoogle Scholar
[14]Mangan, A.M.: De-embedding transmission line measurements for accurate modeling of IC designs. IEEE Trans. Electron Devices, 53 (2) (2006), 235.CrossRefGoogle Scholar
[15]Dworsky, L.N.: Modern Transmission Line Theory and Applications, vol. 260, Wiley, New York, 1979.Google Scholar
[16]Bahl, I.J.: Lumped Elements for RF and Microwave Circuits, Artech House, New York, 2003.Google Scholar
[17]Welty, R.J.: Porous silicon technology for RF integrated circuit applications, in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, IEEE, 1998.Google Scholar