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Over the past twenty-five years, mathematical concepts associated with geometric phases have come to occupy a central place in our modern understanding of the physics of electrons in solids. These 'Berry phases' describe the global phase acquired by a quantum state as the Hamiltonian is changed. Beginning at an elementary level, this book provides a pedagogical introduction to the important role of Berry phases and curvatures, and outlines their great influence upon many key properties of electrons in solids, including electric polarization, anomalous Hall conductivity, and the nature of the topological insulating state. It focuses on drawing connections between physical concepts and provides a solid framework for their integration, enabling researchers and students to explore and develop links to related fields. Computational examples and exercises throughout provide an added dimension to the book, giving readers the opportunity to explore the central concepts in a practical and engaging way.
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
The field of matter transport is central to understanding the processing of materials and their subsequent mechanical properties. While thermodynamics determines the final state of a material system, it is the kinetics of mass transport that governs how it gets there. This book, first published in 2000, gives a solid grounding in the principles of matter transport and their application to a range of engineering problems. The author develops a unified treatment of mass transport applicable to both solids and liquids. Traditionally matter transport in fluids is considered as an extension of heat transfer and can appear to have little relationship to diffusion in solids. This unified approach clearly makes the connection between these important fields. This book is aimed at advanced undergraduate and beginning graduate students of materials science and engineering and related disciplines. It contains numerous worked examples and unsolved problems. The material can be covered in a one semester course.
This textbook provides students with a complete working knowledge of the properties of imperfections in crystalline solids. Readers will learn how to apply the fundamental principles of mechanics and thermodynamics to defect properties in materials science, gaining all the knowledge and tools needed to put this into practice in their own research. Beginning with an introduction to defects and a brief review of basic elasticity theory and statistical thermodynamics, the authors go on to guide the reader in a step-by-step way through point, line, and planar defects, with an emphasis on their structural, thermodynamic, and kinetic properties. Numerous end-of-chapter exercises enable students to put their knowledge into practice, and with solutions for instructors and MATLAB® programs available online, this is an essential text for advanced undergraduate and introductory graduate courses in crystal defects, as well as being ideal for self-study.