Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
  1. Home
  2. Search

Refine search

Refine search

Access:
Content type:
Publication date:
Apply   From and To filters
Subject: Show more
Journals Show more
Publishers: Show more
Societies Show more
Series: Show more
Collections: Show more

Actions for selected content:

Select all | Deselect all
  • View selected items
  • Export citations
  • Download PDF (zip)
  • Save to Kindle
  • Save to Dropbox
  • Save to Google Drive

Save Search

You can save your searches here and later view and run them again in "My saved searches".

Please provide a title, maximum of 40 characters.
Cancel
×

1 results

  • Silicon Carbide Power Field-Effect Transistors

  • Jian H. Zhao
  • Journal:
    MRS Bulletin / Volume 30 / Issue 4 / April 2005
    Published online by Cambridge University Press:
    31 January 2011, pp. 293-298
    Print publication:
    April 2005

  • Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.