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Silicon Carbide Power Field-Effect Transistors

Published online by Cambridge University Press:  31 January 2011

Jian H. Zhao
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Abstract

Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

Keywords

field-effect transistorsmetal oxide semiconductor field-effect transistorsMOSFETspower switchingsilicon carbidevertical-junction field-effect transistorsVJFETs
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 293 - 298
Copyright
Copyright © Materials Research Society 2005

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