In the present work, classical electron–ion scattering, Coulomb logarithm, and stopping power are studied taking into account the quantum mechanical diffraction effect and the dynamic screening effect separately and together. The inclusion of the quantum diffraction effect is realized at the same level as the well-known first-order gradient correction in the extended Thomas–Fermi theory. In order to take the effect of dynamic screening into account, the model suggested by Grabowski et al. in 2013 is used. Scattering as well as stopping power of the external electron (ion) beam by plasma ions (electrons) and scattering of the plasma's own electrons (ions) by plasma ions (electrons) are considered differently. In the first case, it is found that in the limit of the non-ideal plasma with a plasma parameter Γ → 1, the effects of quantum diffraction and dynamic screening partially compensate each other. In the second case, the dynamic screening enlarges scattering cross-section, Coulomb logarithm, and stopping power, whereas the quantum diffraction reduces their values. Comparisons with the results of other theoretical methods and computer simulations indicate that the model used in this work gives a good description of the stopping power for projectile velocities $v\,{\rm \lesssim}\, 1.5 v_{{\rm th}}$, where vth is the thermal velocity of the plasma electrons.

Sample thickness is a decisive parameter for any quantification of image information and composition in transmission electron microscopy. In this context, we present a method to determine the local sample thickness by scanning transmission electron microscopy at primary energies below 30 keV. The image intensity is measured with respect to the intensity of the incident electron beam and can be directly compared with Monte Carlo simulations. Screened Rutherford and Mott scattering cross-sections are evaluated with respect to fitting experimental data with simulated image intensities as a function of the atomic number of the sample material and primary electron energy. The presented method is tested for sample materials covering a wide range of atomic numbers Z, that is, fluorenyl hexa-peri-hexabenzocoronene (Z = 3.5), carbon (Z = 6), silicon (Z = 14), gallium nitride (Z = 19), and tungsten (Z = 74). Investigations were conducted for two primary energies (15 and 30 keV) and a sample thickness range between 50 and 400 nm.