Research Article
Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux
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- 13 June 2014, e1
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Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
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- 13 June 2014, e2
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Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
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- 13 June 2014, e3
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Wet Chemical Etching of AlN Single Crystals
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- 13 June 2014, e4
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Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
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- 13 June 2014, e5
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Hardness of bulk single-crystal GaN and AlN
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- 13 June 2014, e6
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Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
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- 13 June 2014, e7
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Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
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- 13 June 2014, e8
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Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
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- Published online by Cambridge University Press:
- 13 June 2014, e9
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