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Quantitative compositional analysis of InxGa1−xN/GaN multiquantum wells in light-emitting diodes

Published online by Cambridge University Press:  06 July 2015

Youngji Cho ,
Jung Sik Park ,
Jun-Mo Yang ,
Kyung Jin Park ,
Yun Chang Park ,
Jiho Chang ,
Sang Geul Lee  and
Kwan-Young Han
Youngji Cho
Affiliation:
Department of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, Korea; and Department of Applied Science, Korea Maritime and Ocean University, Busan 606-791, Korea
Jung Sik Park
Affiliation:
Department of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, Korea
Jun-Mo Yang*
Affiliation:
Department of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, Korea
Kyung Jin Park
Affiliation:
Department of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, Korea
Yun Chang Park
Affiliation:
Department of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, Korea
Jiho Chang
Affiliation:
Department of Applied Science, Korea Maritime and Ocean University, Busan 606-791, Korea
Sang Geul Lee
Affiliation:
Daegu Center, Korea Basic Science Institute, Daegu 702-701, Korea
Kwan-Young Han
Affiliation:
Department of Display Engineering, College of Convergence Technology, Dankook University, Cheonan 330-714, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A quantitative analysis of In concentration in InGaN/GaN multiquantum wells in light-emitting diodes was carried out using high-resolution transmission electron microscopy (HRTEM) and high-angle annual dark-field scanning TEM (HAADF-STEM). The In composition in InGaN was evaluated by the precise measurement of c-lattice parameters in the HRTEM micrographs, which increase with increasing In composition. The reliability of the results was confirmed by high-resolution x-ray diffraction measurements and Rutherford backscattering spectrometry. Quantitative In compositions can, therefore, be determined using HRTEM. We tried to determine the quantitative In compositions in InGaN by analyzing the intensity profiles of the HAADF-STEM images. However, several problems were encountered, such as differences in the thickness of the region observed, carbon contamination, and ion beam damage during specimen preparation. Therefore, relative differences in composition were observed in the HAADF-STEM images.

Keywords

transmission electron microscopy (TEM)III-V
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 19: Focus Issue: Nitrides and Oxynitride Materials , 14 October 2015 , pp. 2893 - 2899
Copyright
Copyright © Materials Research Society 2015 

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