Book contents
- Frontmatter
- Contents
- Preface
- Acknowledgments
- 1 Basic electromagnetism
- 2 Magnetic films
- 3 Properties of patterned ferromagnetic films
- 4 Magnetoresistance effects
- 5 Field-write mode MRAMs
- 6 Spin-torque-transfer mode MRAM
- 7 Applications of MTJ-based technology
- Appendix A Unit conversion table for cgs and SI units
- Appendix B Dimensions of units of magnetism
- Appendix C Physical constants
- Appendix D Gaussian distribution and quantile plots
- Appendix E Weibull distribution
- Appendix F Time-dependent dielectric breakdown (TDDB) of magnetic tunnel junction devices
- Appendix G Binomial distribution and Poisson distribution
- Appendix H Defect density and the breakdown/TMR distribution of MTJ devices
- Appendix I Fe, Ni and Co material parameters
- Appendix J Soft error, hard fail and design margin
- Index
Contents
Published online by Cambridge University Press: 06 July 2010
- Frontmatter
- Contents
- Preface
- Acknowledgments
- 1 Basic electromagnetism
- 2 Magnetic films
- 3 Properties of patterned ferromagnetic films
- 4 Magnetoresistance effects
- 5 Field-write mode MRAMs
- 6 Spin-torque-transfer mode MRAM
- 7 Applications of MTJ-based technology
- Appendix A Unit conversion table for cgs and SI units
- Appendix B Dimensions of units of magnetism
- Appendix C Physical constants
- Appendix D Gaussian distribution and quantile plots
- Appendix E Weibull distribution
- Appendix F Time-dependent dielectric breakdown (TDDB) of magnetic tunnel junction devices
- Appendix G Binomial distribution and Poisson distribution
- Appendix H Defect density and the breakdown/TMR distribution of MTJ devices
- Appendix I Fe, Ni and Co material parameters
- Appendix J Soft error, hard fail and design margin
- Index
Summary
- Type
- Chapter
- Information
- Magnetic MemoryFundamentals and Technology, pp. v - viiiPublisher: Cambridge University PressPrint publication year: 2010