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1 - Semiconducting materials

Published online by Cambridge University Press:  10 September 2009

D. B. Holt  and
B. G. Yacobi
D. B. Holt
Affiliation:
Imperial College of Science, Technology and Medicine, London
B. G. Yacobi
Affiliation:
University of Toronto
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Summary

Materials development and crystal growth techniques

This chapter outlines the nature and importance of semiconductors. The industrially important semiconductors are tetrahedrally coordinated, diamond and related structure IVB, III-V and related materials. The sp3 tetrahedral covalent bonding is stiff and brittle, unlike the metallic bond, which merely requires closest packing to minimize the energy. The atomic core structures of extended defects in semiconductors depend on this stiff, brittle bonding and in turn give rise to the electrical and optical properties of defects.

The semiconductors' closely related adamantine (diamond-like) crystal structures and energy band diagrams are outlined. There are a large number of families of such semiconducting compounds and alloys, some of which are non-crystalline. However, only a few have been developed to the highest levels of purity and perfection so that single crystal wafers are available. Instead, with modern epitaxial growth techniques, thin films, quantum wells, wires and dots and artificial superlattices can be produced. This can be done with many semiconductor materials, including alloys of continuously variable composition, with the necessary quality on one of the few available types of wafer. These epitaxial materials have ‘engineered’ energy band structures and hence electronic and optoelectronic properties and can be designed for incorporation into devices to meet new needs. It is largely to this field that materials development has moved, except for the occasional development of an additional material like GaN.

The chapter closes with a brief account of the way that competitive materials development, responding to economic demand, determines which materials enter production.

Type
Chapter
Information
Extended Defects in Semiconductors
Electronic Properties, Device Effects and Structures
 , pp. 1 - 72
Publisher: Cambridge University Press
Print publication year: 2007

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Yu, P. Y. and Cardona, M. (1996). Fundamentals of Semiconductors: Physics and Materials Properties. New York: Springer.CrossRefGoogle Scholar
Brice, J. C. (1986). Crystal Growth Processes. New York: Wiley.Google Scholar
Davies, G. J. and Williams, R. H. (eds.) (1994). Semiconductor Growth, Surfaces and Interfaces. London: Chapman & Hall.Google Scholar
Herman, M. A. and Sitter, H. (1989). Molecular Beam Epitaxy: Fundamentals and Current Status. New York: Springer-Verlag.CrossRefGoogle Scholar
Lewis, B. and Anderson, J. C. (1978). Nucleation and Growth of Thin Films. New York: Academic Press.Google Scholar
Pamplin, B. R. (1975). Crystal Growth, International Series of Monographs in The Science of the Solid State, Volume 6. New York: Pergamon Press.Google Scholar
Parker, E. H. C. (ed.) (1985). The Technology and Physics of Molecular Beam Epitaxy. New York: Plenum Press.CrossRefGoogle Scholar
Stradling, R. A. and Klipstein, P. C. (eds.) (1990). Growth and Characterization of Semiconductors. New York: Adam Hilger.Google Scholar
Stringfellow, G. B. (1989). Organometallic Vapor-Phase Epitaxy: Theory and Practice. Boston: Academic Press.Google Scholar
Mayer, J. W. and Lau, S. S. (1990). Electronic Materials Science: For Integrated Circuits in Si and GaAs. New York: Macmillan Publishing.Google Scholar
Pierret, R. F. and Neudeck, G. W. (eds.) (1989). Modular Series on Solid State Devices. Reading, Mass.: Addison-Wesley.Google Scholar
Seeger, K. (1999). Semiconductor Physics: An Introduction. New York: Springer-Verlag.CrossRefGoogle Scholar
Streetman, B. G. (1995). Solid State Electronic Devices. Englewood Cliffs, N.J.: Prentice-Hall.Google Scholar
Sze, S. M. (1981). Physics of Semiconductor Devices. New York: Wiley.Google Scholar
Wilson, J. and Hawkes, J. F. B. (1998). Optoelectronics: An Introduction. Englewood Cliffs, N.J: Prentice-Hall.Google Scholar
Yu, P. Y. and Cardona, M. (1996). Fundamentals of Semiconductors: Physics and Materials Properties. New York: Springer.CrossRefGoogle Scholar
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Davies, G. J. and Williams, R. H. (eds.) (1994). Semiconductor Growth, Surfaces and Interfaces. London: Chapman & Hall.Google Scholar
Herman, M. A. and Sitter, H. (1989). Molecular Beam Epitaxy: Fundamentals and Current Status. New York: Springer-Verlag.CrossRefGoogle Scholar
Lewis, B. and Anderson, J. C. (1978). Nucleation and Growth of Thin Films. New York: Academic Press.Google Scholar
Pamplin, B. R. (1975). Crystal Growth, International Series of Monographs in The Science of the Solid State, Volume 6. New York: Pergamon Press.Google Scholar
Parker, E. H. C. (ed.) (1985). The Technology and Physics of Molecular Beam Epitaxy. New York: Plenum Press.CrossRefGoogle Scholar
Stradling, R. A. and Klipstein, P. C. (eds.) (1990). Growth and Characterization of Semiconductors. New York: Adam Hilger.Google Scholar
Stringfellow, G. B. (1989). Organometallic Vapor-Phase Epitaxy: Theory and Practice. Boston: Academic Press.Google Scholar

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  • Semiconducting materials
  • D. B. Holt, Imperial College of Science, Technology and Medicine, London, B. G. Yacobi, University of Toronto
  • Book: Extended Defects in Semiconductors
  • Online publication: 10 September 2009
  • Chapter DOI: https://doi.org/10.1017/CBO9780511534850.002
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  • Semiconducting materials
  • D. B. Holt, Imperial College of Science, Technology and Medicine, London, B. G. Yacobi, University of Toronto
  • Book: Extended Defects in Semiconductors
  • Online publication: 10 September 2009
  • Chapter DOI: https://doi.org/10.1017/CBO9780511534850.002
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  • Semiconducting materials
  • D. B. Holt, Imperial College of Science, Technology and Medicine, London, B. G. Yacobi, University of Toronto
  • Book: Extended Defects in Semiconductors
  • Online publication: 10 September 2009
  • Chapter DOI: https://doi.org/10.1017/CBO9780511534850.002
Available formats
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