We propose the techniques for automatic processing of measurement results in the context of golden (typical) device selection and noise figure measurement. These techniques are for golden (typical) device selection and noise figure measurement processing. Automation of measurement result processing and microwave element modeling speeds up a modeling routine and decreases the risk of possible errors. The techniques are validated through modeling of 0.15 μm GaAs pHEMTs with 4 × 40 μm and 4 × 75 μm total gate widths. Two test amplifiers were designed using the developed models. The amplifier modeling results agree well with measurements which confirms the validity of the proposed techniques. The proposed algorithm is potentially applicable to other circuit types (switches, digital, power amplifiers, mixers, oscillators, etc.) but may require different settings in those cases. However, in the presented work, we validated the algorithm for the linear and low-noise amplifiers only.

In this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

We present a novel bonding process for gallium nitride-based electronic devices on diamond heat spreaders. In the proposed technology, GaN devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD heat spreaders at 3 GHz and 50 V drain bias show comparable power-added-efficiency and output power (Pout) levels. A thermal analysis of the hybrids was performed by comparison of 2 × 1mm2 AlGaN/GaN Schottky diodes on Si, PCD, and SCD, which exhibit a homogeneous field in the channel in contrast to gated transistors. Significantly different currents are observed due to the temperature dependent mobility in the 2DEG channel. These measurements are supported by a 3D thermal finite element analysis, which suggests a large impact of our transfer technique on the thermal resistance of these devices. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN device applications.

This paper reports scanning microwave microscopy of CMOS interconnect aluminum lines both bare and buried under oxide. In both cases, a spatial resolution of 190 ± 70 nm was achieved, which was comparable or better than what had been reported in the literature. With the lines immersed in water to simulate high-k dielectric, the signal-to-noise ratio degraded significantly, but the image remained as sharp as before, especially after averaging across a few adjacent scans. These results imply that scanning microwave microscopy can be a promising technique for non-destructive nano-characterization of both CMOS interconnects buried under oxide and live biological samples immersed in water.

In this paper, the resonant frequencies, quality factors and bandwidths of high Tc superconducting circular microstrip patches in the presence of a dielectric superstrate loading have been studied using Galerkin testing procedure in the Hankel transform domain. The exact Green's function of the grounded dielectric slab is used to derive an electric field integral equation for the unknown current distribution on the circular disc. Thus, surface waves, as well as space wave radiation, are included in the formulation. London's equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disc. Galerkin testing is used in the resolution of the electric field integral equation. Two solutions using two different basis sets to expand the unknown disk currents are developed. The first set of basis functions used is the complete set of transverse magnetic and transverse electric modes of a cylindrical cavity with magnetic side walls. The second set of basis functions used employ Chebyshev polynomials and enforce the current edge condition. The computed values for a wide range of variations of superstrate thickness and dielectric constant are compared with different theoretical and experimental values available in the open literature, showing close agreement. Results are showing that the superstrate parameters should always be kept into account in the design stage of the superconducting microstrip resonators.

The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance simulations using the model are used to predict the efficiency of a millimeter-wave balanced doubler from room to cryogenic temperatures. The estimation is verified experimentally using a 188 GHz balanced doubler cooled down to 77 K. The model has been further verified down to 14 K using a 78 GHz balanced doubler.

High-performance SiGe HBTs and advancements in packaging processes have enabled system-in-package (SiP) designs for millimeter-wave applications. This paper presents a 122-GHz bistatic frequency modulated continuous wave (FMCW) radar SiP. The intended applications for the SiP are short-range distance and angular position measurements as well as communication links between cooperative radar stations. The chip is realized in a 130-nm SiGe BiCMOS technology and is based on a fully differential frequency-multiplier chain with in phase quadrature phase receiver and a binary phase shift keying modulator in the transmit chain. On-wafer measurement results show a maximum transmit output power of 2.7 dBm and a receiver gain of 11 dB. The chip consumes a DC power of 570 mW at a supply voltage of 3.3 V. The fabricated chip is integrated in an embedded wafer level ball grid array (eWLB) package. Transmit/receive rhombic antenna arrays with eight elements are designed in two eWLB packages with and without backside metal, with a measured peak gain of 11 dBi. The transceiver chip size is 1.8 mm × 2 mm, while the package size is 12 mm × 6 mm, respectively. FMCW measurements have been conducted with a sweep bandwidth of up to 17 GHz and a measured range resolution of 1.5 cm has been demonstrated. 2D positions of multiple targets have been computed using two coherently linked radar stations.