Heterostructures formed by nanoparticles hybridized with porous hosts are of great potential in many practical applications such as catalysis, adsorption, and environmental remediation, based on their intrinsic properties. The objectives of this study were to synthesize zerovalent iron nanoparticles/montmorillonite heterostructures and to investigate their textural evolution under different Fe loadings. Iron nanoparticles were hybridized with montmorillonite by impregnation of montmorillonite by ferric ions followed by chemical reduction with sodium borohydride in solution. These hybridized Fe nanoparticles were well dispersed on the montmorillonite surface, size adjustable, and resistant to oxidation under the protection of native Fe-oxide shells. The textural evolution of these heterostructures under various Fe loadings was investigated using nitrogen physisorption, X-ray diffraction, electron microscopy, and elemental analyses. As the Fe loadings increased, the total pore and mesopore volumes were almost unchanged; the total, micropore, and external surface areas as well as the micropore volume decreased; and the average pore diameter increased. These textural changes could be attributed to the filling of the interparticle pores of montmorillonite by a variable amount of Fe nanoparticles. In addition, with increasing Fe loadings, the mesoporous character was enhanced for these heterostructures. These fundamental results are important in understanding the structure of these heterostructures as well as in developing some novel applications in related fields.

Various approaches have been used for the preparation of heterostructured materials based on clay minerals, with numerous potential applications offered by the resulting functional materials. In this study, a fibrous clay mineral (palygorskite) and a tetraethyl orthosilicate reagent were used to obtain silica–palygorskite heterostructures. The aim was to highlight the influence of two factors during the preparation process: the effect of acid activation pre-treatment of the palygorskite with HCl and the effect of varying the length of the amine chains used – dodecylamine and butylamine – on the formation and development of silica nanoparticles on the surface of the palygorskite fibres. The silica–palygorskite heterostructures were obtained after the removal of the organic templates by calcination at 500°C. The textural and structural properties of the silica–palygorskite heterostructured samples were determined using various experimental characterization techniques, such as X-ray diffraction, transmission electron microscopy, gas adsorption and Fourier-transform infrared spectroscopy. The experimental variables targeted in this study appeared to have a significant effect on the textural properties of the silica–palygorskite heterostructure obtained. The great specific surface area and the mesoporous, microporous and ultramicroporous volumes as determined using nitrogen and/or carbon dioxide gas adsorption confirm the benefit of combining the acid activation pre-treatment of the fibrous clay mineral with the use of a long-chain amine co-surfactant (dodecylamine). The resulting silica–palygorskite heterostucture has a great specific surface area (628 m2 g–1) and a well-developed total pore network (VN2 = 0.24 cm3 g–1; Vultra (CO2) = 0.18 cm3 g–1). This material will be tested for the removal of volatile organic compounds at low concentrations.

The occurrence of multi-hit events and the separation distance between multi-hit ion pairs field evaporated from III-nitride semiconductors can potentially provide insights on neighboring chemistry, crystal structure, and field conditions. In this work, we quantify the range of variation in major III-N and III-III ion-pair separation to establish correlations with bulk composition, growth method, and ion-pair chemistry. The analysis of ion-pair separation along the AlGaN/GaN heterostructure system allows for comparison of Ga-N and Ga-Ga ion-pair separation between events evaporated from pure GaN and Al0.3Ga0.7N. From this, we aim to define a relative measure for the bond length of ion pairs within an AlGaN/GaN heterostructure. The distributions of pair separation revealed a distinct bimodal behavior that is unique to Al-N2+ ion pairs, suggesting the occurrence of both co-evaporation and molecular dissociation. Finally, we demonstrated that the two modes of ion-pair events align with the known variation in the surface electric field of the AlGaN(0001) structure. These findings demonstrate the utility of atom probe tomography in studying the crystallographic nature of nitride semiconductors.

In this work, the correlation between composition and relative evaporation field was investigated by tracking the statistics of multi-hit detector events in atom probe tomography (APT). This approach is applied systematically to a GaN-based nitride heterostructure with five AlxGa1−xN layers of varying Al composition. The relative field evaporation and the percentage of multi-hit events were found to increase with higher Al concentration. Furthermore, the comparison of the relative evaporation fields of AlN with respect to the constituent ions is found to be less than GaN with respect to its constituent ions. Despite equivalent compositions between opposing interfaces of the same AlxGa1−xN interlayer, the rate of change in multiplicity exhibits a consistent asymmetric trend with a steeper slope across the AlxGa1−xN/GaN interface compared to the GaN/AlxGa1−xN interface. The AlxGa1−xN/GaN heterostructure serves as a test structure for exploring field evaporation and neighborhood chemistry, which can be applied to any material chemistry and particularly other nitride systems.

Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.

Molybdenum disulphide (MoS2) is one of the transition metal dichalcogenide (TMD) materials which has attracted attention due to its various interesting properties. MoS2 is very promising for electronic and optoelectronic devices due to its indirect band gap (∼1.2 eV) for few layer and direct band gap (∼1.8 eV) for monolayer MoS2. In MoS2 based Schottky devices, Schottky barrier height depends on the thickness of MoS2 because of its tunable electronic properties. Here, we have used DC sputtering technique to fabricate metal-semiconductor junction of MoS2 with platinum (Pt) metal contacts. In this work, MoS2 thin film (∼10 nm) was deposited on p-Silicon (111) using DC sputtering technique at optimized parameters. Schottky metallization of Pt metal (contact area ∼ 0.785x10-2 cm2) was also done using DC sputtering. Current-voltage (I-V) characteristics of the Pt/MoS2 Schottky junction have been investigated in the temperature range 80-350K. Forward I-V characteristics of Pt/MoS2 junction are analysed to calculate different Schottky parameters. Schottky barrier height increases and ideality factor decreases on increasing the temperature from 80-350K. The I-V-T measurements suggest the presence of local inhomogeneities at the Pt/MoS2 junction. Schottky barrier inhomogeneities occur in case of rough interface. In such cases, the Schottky barrier height does not remain constant and vary locally. Current transport through the Schottky junction is a thermally activated process. As temperature increases, more and more electrons overcome the spatially inhomogeneous barrier height. As a result, the ideality factor becomes close to unity and apparent barrier height increases due to increase in temperature.

The electrical properties of Radio Frequency Sputtered NiFeO and NiO films deposited on n and p-type Silicon is investigated for two different oxygen flows. Rectifying properties for Ni0.8Fe0.2O1+ α on n-Si showed Iforward/Ireverse >10,000 for α>0 and Iforward/Ireverse >50 for α<0. Both types of devices have opposite forward biases. Results suggest that NiFeO sputtered at high oxygen flow is p-type. For NiO and NiFeO on p-Si no strong rectifying properties were observed. The specific contact resistivity of Pt/Ni0.9Fe0.1O1+ α (α>0) was estimated from the difference between the two and four-point probe resistances (0.0007 ± 0.0003 Ω cm2). Using density functional theory calculations, density of state and charge density plots were obtained for systems modelled after experiment, showing that states introduced by O vacancies in NiFeO are localized and prefer locations near Ni explaining the observed hysteresis effects in the IV curves of devices sputtered at low oxygen flow.

We examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induced heating as a function of the microwave power. The study shows that microwaves produce a small discernable increase in the electron temperature both at null magnetic field and at finite magnetic fields in the GaAs/AlGaAs 2DES. The heating effect at null field appears greater in comparison to the examined finite field interval, although the increase in the electron temperature in the zero-field limit appears smaller than theoretical predictions.

We report on the time-resolved measurements of photocarrier dynamics in InGaAs/InAlAs superlattices with epitaxial stresses in a wide range of optical pump fluences. We demonstrated that the contribution of free carrier absorption and two-photon absorption to the carrier dynamics decreases with an increase of epitaxial stresses. The lowest relaxation times of 1.7 and 8.3 ps, respectively attributed to carrier trapping and carrier recombination, were obtained for the structure with maximum epitaxial stresses.

We have investigated the chemical and electrical properties of a thin SiO2/TiO2 stacking layer deposited on n-Si and heavily phosphorus-doped n++ Si substrates to elucidate effects of phosphorus doping of Si absorbers on the band alignment and electrical performance of a SiO2/TiO2 stack-based electron-selective contact deposited on the differently doped Si substrates. From our XPS study, we show a shift of the TiO2 energy levels up to ∼0.13 eV with respect to those of Si as the doping level of Si substrates changes. We also show that the conduction band offset of the SiO2/TiO2 stacking layer at the interface with the n++ Si substrate seems to smaller than that of the SiO2/TiO2 stacking layer at the interface with n-Si substrate. Finally, from our electrical transport measurements, we could conclude that the thinner tunneling barrier, the increased electron density in front of the SiO2 layer in the n++ Si surface, and/or the reduced barrier height by heavy doping, seem to enhance the majority electron transport property of the SiO2/TiO2/n++ Si samples compared to that of the SiO2/TiO2/n-Si samples.

Age-related macular degeneration (AMD), a retinal degenerative disease that results in a continuous degeneration of photoreceptors in the retina, which eventually leads to complete blindness. One approach to combat AMD is through the use of artificially implantable photodetectors that are physically placed on the retina. Interestingly, 2D materials such as photosensitive and semiconducting molybdenum disulfide (MoS2) and electrically conducting graphene have recently received tremendous promise due to their unique photonic and optoelectronic properties and their potential in various types of micro and nano-devices. In this study, a highly biocompatible 2D graphene-MoS2 photodetectors on a flexible polyimide substrate were designed, fabricated using inkjet printing to form photosensitive pixels and tested as a function of photo intensity and strain. The inkjet printed 2D heterostructure devices were photoresponsive and the photocurrent scaled proportionally with the incident light intensity, exhibiting a photoresponsivity R ∼ 0.30 A/W at room temperature. The strain-dependent measurements of photocurrent with bending showed a photocurrent of Iph ∼ 1.16 μA with strain levels for curvature up to ∼ 0.262 cm-1. Inkjet printed graphene and MoS2 inks were also characterized using techniques such as Raman Spectroscopy, Photoluminescence (PL) and Scanning Electron Microscopy (SEM).

Heat is the most ubiquitous form of energy on planet Earth. Every day, the sun continuously strikes the Earth’s surface with 120,000 Terawatts of energy. This solar energy is more than 10,000 times the amount of energy produced worldwide. With the scarcity of fossil fuels looming on the horizon and its adverse effect on the environment many researchers, from academia to industry, are exploring cleaner, greener and more efficient renewable energy technologies. Thermoelectricity can provide an alternative to hazardous fossil fuels as its electricity is produced directly from heat with no moving parts or working fluid. The efficiency of any thermoelectric material is given by a quantity called the figure of merit ZT. For thermoelectric (TE) devices to be competitive with fluid-based and other energy related devices, ZT greater than 2 is usually sought. Here, we report on the fabrication of thin film thermoelectric materials based on Bi2Te3/WS2 superlattice layer structure using RF magnetron sputtering deposition method. Quantum confinement in these low dimensional and ultrathin superlattices can enhance the density of states near the fermi level resulting in higher ZT value. The thermoelectric figure of merit can be enhanced by controlling the layer thickness close to the phonons mean free path. This way heat carrying phonons with different wavelengths can be scattered efficiently resulting in lower lattice thermal conductivity.

Atomically thin transition metal dichalcogenides (TMDCs), such as WS2 and MoS2, have opened up new opportunities for the next generation of optoelectronics owing to their unique properties such as optical transparency, high carrier mobility, widely tunable band gap, and strong light–matter interaction. The photodetection performance relies primarily on the light absorption efficiency and separation efficiency of photoexcited electron–holes. The photodetectors with all broadband response, high photoconductive gain, high response speed, and high detectivity is arduous challenge to realize using one photo-active material. Building of photodetectors composed of two or more light absorber materials of different band gaps was an efficient route to realize high performance light detection. The application of a thin sensitizing layer atop the TMDCs has proven to be a viable route to improve the photodetection performance due to the efficient charge separation at the interface, and fast charge transfer process due to the high carrier mobility. In this article, we review the progress made toward hybrid photodetector based on TMDCs with various sensitizers from metal to large band-gap semiconductor in architectures from zero-dimensional quantum dot to two-dimensional crystal.

In this paper, the Ni-decorated ZnO photocatalysts with magnetic separable characteristics were prepared by a simple replacing-hydrothermal process for the first time. The as-synthesized composites were characterized by powder x-ray diffraction, UV–visible diffuse reflectance spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscope, transmission electron microscopy, and so on. It is found that the introduction of Ni (as Ni0 and Ni2+ forms) turned the morphologies of ZnO photocatalysts, enhanced photoabsorption in a visible light region, and increased amount of surface adsorbed oxygen. The photodegradation test of anthraquinone dye (reactive brilliant blue KN-R) indicated that the Ni-decorated ZnO photocatalysts have better activities as compared to the ZnO reference. The enhancement of photocatalytic activity of Ni-decorated ZnO photocatalysts can be attributed to the existence of Ni2+ doping, Ni0/ZnO heterostructure, and abundant-adsorbed oxygen (as the electronic scavenges), which caused efficient separation of electron–hole pairs in Ni-decorated ZnO photocatalysts. Furthermore, the introduction of metallic Ni also endued ZnO with good magnetic recoverability. The re-collected experiments by external magnetic field indicated that Ni-decorated ZnO as a magnetically recoverable photocatalyst is acceptable.