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Effect of Epitaxial Stresses on the Time Dynamics of Photoexcited Charge Carriers in InGaAs−Based Superlattices

Published online by Cambridge University Press:  19 March 2019

Arseniy Buryakov Open the ORCID record for Arseniy Buryakov [Opens in a new window] ,
Dinar Khusyainov ,
Elena Mishina ,
Alexandr Yachmenev ,
Rustam Khabibullin  and
Dmitriy Ponomarev
Arseniy Buryakov*
Affiliation:
MIREA Russian Technological University (RTU MIREA), 78 Vernadsky Ave., Moscow, 119454, Russia.
Dinar Khusyainov
Affiliation:
MIREA Russian Technological University (RTU MIREA), 78 Vernadsky Ave., Moscow, 119454, Russia.
Elena Mishina
Affiliation:
MIREA Russian Technological University (RTU MIREA), 78 Vernadsky Ave., Moscow, 119454, Russia.
Alexandr Yachmenev
Affiliation:
Institute of Ultra High Frequency Semiconductor Electronics of the Russian Academy of Science, 7/5 Nagornyi proezd, Moscow, 117105, Russia. Prokhorov General Physics Institute of the Russian Academy of Science, Moscow, 119991, Russia.
Rustam Khabibullin
Affiliation:
Institute of Ultra High Frequency Semiconductor Electronics of the Russian Academy of Science, 7/5 Nagornyi proezd, Moscow, 117105, Russia. Prokhorov General Physics Institute of the Russian Academy of Science, Moscow, 119991, Russia.
Dmitriy Ponomarev
Affiliation:
Institute of Ultra High Frequency Semiconductor Electronics of the Russian Academy of Science, 7/5 Nagornyi proezd, Moscow, 117105, Russia. Prokhorov General Physics Institute of the Russian Academy of Science, Moscow, 119991, Russia.
*
*(Email: [email protected])
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Abstract

We report on the time-resolved measurements of photocarrier dynamics in InGaAs/InAlAs superlattices with epitaxial stresses in a wide range of optical pump fluences. We demonstrated that the contribution of free carrier absorption and two-photon absorption to the carrier dynamics decreases with an increase of epitaxial stresses. The lowest relaxation times of 1.7 and 8.3 ps, respectively attributed to carrier trapping and carrier recombination, were obtained for the structure with maximum epitaxial stresses.

Keywords

stress/strain relationshipepitaxyphotoconductivityheterostructure
Type
Articles
Information
MRS Advances , Volume 4 , Issue 1: Characterization, Mechanical Properties and Structure-Property Relationships , 2019 , pp. 15 - 20
Copyright
Copyright © Materials Research Society 2019 

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References

REFERENCES

Globisch, B., Dietz, R. J. B., Kohlhaas, R. B., Göbel, T., Schell, M., Alcer, D., Semtsiv, M., and Masselink, W. T., J. Appl. Phys. 121, 53102 (2017).CrossRefGoogle Scholar
Roehle, H., Dietz, R. J. B., Hensel, H. J., Böttcher, J., Künzel, H., Stanze, D., Schell, M., and Sartorius, B., Opt. Express 18, 2296 (2010).CrossRefGoogle Scholar
Galiev, G. B., Pushkarev, S. S., Buriakov, A. M., Bilyk, V. R., Mishina, E. D., Klimov, E. A., Vasil’evskii, I. S., and Maltsev, P. P., Semiconductors 51, 503 (2017).CrossRefGoogle Scholar
Wells, N. P., Belden, P. M., Demers, J. R., and Lotshaw, W. T., J. Appl. Phys. 116, 73506 (2014)CrossRefGoogle Scholar
Alfaro-Gomez, M. and Castro-Camus, E., Appl. Phys. Lett. 110, 42101 (2017).CrossRefGoogle Scholar
Globisch, B., Dietz, R. J. B., Stanze, D., Göbel, T., and Schell, M., Appl. Phys. Lett. 104, (2014).CrossRefGoogle Scholar
Ponomarev, D. S., Yachmenev, A. E., Pushkarev, S. S., Khabibullin, R. A., Grekhov, M. M., Gorodetsky, A., Zaytsev, K. I., Khusyainov, D. I., Buryakov, A. M., and Mishina, E. D., arXiv:1808.03144. 1 (2018).Google Scholar
Khusyainov, D. I., Buryakov, A. M., Bilyk, V. R., Mishina, E. D., Ponomarev, D. S., Khabibullin, R. A., and Yachmenev, A. E., Tech. Phys. Lett. 43, 1020 (2017).CrossRefGoogle Scholar
Grishunin, K. A., Brehov, K. A., and Samotokhin, O. V., Russian Technological J . 2, 134 (2015).Google Scholar
Shah, J., Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures (Springer Berlin Heidelberg, Berlin, Heidelberg, 1999).CrossRefGoogle Scholar
Prabhu, S.S., Vengurlekar, A.S., J. Appl. Phys. 95, 7803 (2004).CrossRefGoogle Scholar
Joschko, M., Langlois, P., Thoen, E. R., Koontz, E. M., Ippen, E. P., and Kolodziejski, L. A., Appl. Phys. Lett. 76, 1383 (2000).CrossRefGoogle Scholar
Bennett, B. R., Soref, R. A., and Del Alamo, J. A., IEEE J. Quantum Electron. 26, 113 (1990).CrossRefGoogle Scholar
Ortiz, V., Nagle, J., Lampin, J.-F., Péronne, E., and Alexandrou, A., J. Appl. Phys. 102, 43515 (2007).CrossRefGoogle Scholar
Khusyainov, D. I., Dekeyser, C., Buryakov, A. M., Mishina, E. D., Galiev, G. B., Klimov, E. A., Pushkarev, S. S., and Klochkov, A. N., Int. J. Mod. Phys. B 31, 1 (2017).CrossRefGoogle Scholar