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Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-wave applications: proposal of reliability-aware circuit design methodology
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 10 / Issue 5-6 / June 2018
- Published online by Cambridge University Press:
- 28 August 2018, pp. 690-699
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Total Ionizing Dose and Displacement-Damage Effects in Microelectronics
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- Journal:
- MRS Bulletin / Volume 28 / Issue 2 / February 2003
- Published online by Cambridge University Press:
- 31 January 2011, pp. 136-140
- Print publication:
- February 2003
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