Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-25T02:13:56.715Z Has data issue: false hasContentIssue false
  • English
  • Français

Total Ionizing Dose and Displacement-Damage Effects in Microelectronics

Published online by Cambridge University Press:  31 January 2011

Charles C. Foster
Get access

Abstract

When exposed to radiation, the function of microelectronic devices is not only degraded by single-event phenomena but by cumulative effects. Most of the energy lost by radiation passing through semiconductors is through ionization. Buildup of charge in gate oxide layers and of interface and border traps due to ionization result in semipermanent damage to the device. These effects are known as total ionizing dose effects. A fraction of the energy of the radiation passing through semiconductors is lost to displacement of atoms from their sites in the crystal lattice structure. The buildup of displacement damage with radiation exposure causes gradual but permanent changes in device performance and limits device lifetime in a radiation environment. Displacement damage will be discussed in the context of non-ionizing energy loss.

Keywords

displacement damageelectrical propertiesmicroelectronicsnon-ionizing energy loss (NIEL)radiation effectssemiconductorssoft errorstotal ionizing dose (TID) effects
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 2: Single-Event Upsets in Microelectronics , February 2003 , pp. 136 - 140
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.O'Neill, P.M., Badhwar, G.D., and Culpepper, W.X., IEEE Trans. Nucl. Sci. 45 (1998) p. 2467.CrossRefGoogle Scholar
2.Janni, J.F., Calculations of Energy Loss, Range, Pathlength, Straggling, Multiple Scattering and the Probability of Inelastic Nuclear Collisions for 0.1 to 1000-MeV Protons, Technical Report No. AFWL-TR-65–150 (Air Force Weapons Laboratory, Kirtland Air Force Base, Albuquerque, NM, September 1996).Google Scholar
3.IEEE Nuclear and Space Radiation Effects Conference, Archive of Radiation Effects Short-Course Notebooks, 1980–2002, edited by Platteter, D.G., [CD-ROM], IEEE Product No. EC146-TBR (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2002).Google Scholar
4.Schwank, J.R., “Total-Dose Effects in MOS Devices,” IEEE NSREC Short Course Notebook, III (2002).Google Scholar
5.Dressendorfer, P.V., “Basic Mechanisms for the New Millennium,” IEEE NSREC Short Course Notebook, III (1998).Google Scholar
6.Schwank, J.R., “Basic Mechanisms of Radiation Effects in the Natural Space Environment,” IEEE NSREC Short Course Notebook, II (1994).Google Scholar
7.Winokur, P.S., “Total-Dose Radiation Effects,” IEEE NSREC Short Course Notebook, II 1–87 (1992).Google Scholar
8.Summers, G.P., “Displacement Damage: Mechanisms and Measurements,” IEEE NSREC Short Course Notebook, IV (1992).Google Scholar
9.Lindhard, J., Nielsen, V., Scharff, M., and Thomsen, P.V., Mat. Fys. Medd. Dan. Vid. Selsk. 33 (10) (1963) p. 1.Google Scholar
10.Summers, G.P., Burke, E.A., Shapiro, P., Messenger, S.R., and Walters, R.J., IEEE Trans. Nucl. Sci. 40 (1993) p. 1372.CrossRefGoogle Scholar
11.Messenger, S.R., Burke, E.A., Summers, G.P., Xapsos, M.A., Walters, R.J., Jackson, E.M., and Weaver, B.D., IEEE Trans. Nucl. Sci. 46 (1999) p. 1595.CrossRefGoogle Scholar
12.Zeigler, J.F., SRIM-2003, version 2003.05, code may be downloaded from http://www.srim.org/ (accessed November 2002).Google Scholar
13.Anspaugh, B.E., in Proc. 22nd IEEE Photovoltaic Specialists Conf. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1991) p. 1593.Google Scholar
14.Anspaugh, B.E., GaAs Solar Cell Radiation Handbook, JPL Publication 96–9 (1996).Google Scholar
15.Messenger, S.R., Walters, R.J., Burke, E.A., Summers, G.P., and Xapsos, M.A., IEEE Trans. Nucl. Sci. 48 (2001) p. 2121.CrossRefGoogle Scholar
16.Summers, G.P., Burke, E.A., and Xapsos, M.A., Radiat. Meas. 24 (1995) p. 1.CrossRefGoogle Scholar
17.Khanna, S.M., Houdayer, A., Jorio, A., Carlone, C., Parenteau, M., and Gerdes, J.W. Jr, IEEE Trans. Nucl. Sci. 43 (1996) p. 2601.CrossRefGoogle Scholar
18.Barry, A.L., Houdayer, A.J., Hinrichsen, P.F., Letourneau, W.G., and Vincent, J., IEEE Trans. Nucl. Sci. 42 (1995) p. 2104.CrossRefGoogle Scholar
19.Summers, G.P., Chrisey, D.B., Maisch, W.G., Stauss, G.H., Burke, E.A., Nastasi, M., and Tesmer, J.R., IEEE Trans. Nucl. Sci. 36 (1989) p. 1840.CrossRefGoogle Scholar