We report on a high-efficiency, high-power tandem Ho:YAG single-crystal fiber (SCF) laser in-band pumped by a Tm-doped fiber laser at 1907 nm. In addition to the uniform heat distribution resulting from the large surface-to-volume ratio of this fiber-like thin-crystal rod, the long gain region provided by the tandem layout of two SCFs enables high lasing efficiency and power handling capability. More than 100 W output power is achieved at 2.1 μm, corresponding to a slope efficiency of 70.5% and an optical-to-optical efficiency of 67.6%. To the best of our knowledge, this is the highest output power and efficiency ever reported from SCF lasers in the 2-μm spectral range.

We present an effective approach to realize a highly efficient, high-power and chirped pulse amplification-free ultrafast ytterbium-doped yttrium aluminum garnet thin-disk regenerative amplifier pumped by a zero-phonon line 969 nm laser diode. The amplifier delivers an output power exceeding 154 W at a pulse repetition rate of 1 MHz with custom-designed 48 pump passes. The exceptional thermal management on the thin disk through high-quality bonding, efficient heat dissipation and a fully locked spectrum collectively contributes to achieving a remarkable optical-to-optical efficiency of 61% and a near-diffraction-limit beam quality with an M2 factor of 1.06. To the best of our knowledge, this represents the highest conversion efficiency reported in ultrafast thin-disk regenerative amplifiers. Furthermore, the amplifier operates at room temperature and exhibits exceptional stability, with root mean square stability of less than 0.33%. This study significantly represents advances in the field of laser amplification systems, particularly in terms of efficiency and average power. This advantageous combination of high efficiency and diffraction limitation positions the thin-disk regenerative amplifier as a promising solution for a wide range of scientific and industrial applications.

For future fifth-generation (5G) smartphones, a high-efficiency multiple-input/multiple-output (MIMO) antenna system capable of operating in Long Term Evolution (LTE) 42/43/46 is suggested. A pair of small microstrip-fed slot antenna and inverted F antenna is part of the single antenna design structure. They are positioned on the longer side of the FR-4 printed circuit board. In an effort to lessen the mutual coupling, two antenna elements have a U-shaped rectangular slot inserted between them. The detailed study of the suggested MIMO system includes measurement of the reflection parameter, analyzing the radiation performance, performing envelope correlation coefficient (ECC) and channel capacity calculations, and analyses of the effects of user’s hand in the vicinity of the antenna array. Simulation and measurement results demonstrate the required performance of the proposed design, that is, greater than 80% of total efficiency, isolation >12 dB, and ECC <0.15. The suggested antenna has the benefits of multiband operation, high efficiency, good isolation, and a small footprint.

The analytical expression of driving force is helpful to quickly plan the kinematic trajectory of parallel mechanism for automatic drilling and riveting. For parallel posture alignment mechanism, because of its closed-loop characteristics, the inverse dynamic solution is more complex, especially for parallel bracket with actuation redundancy. Considering that the telescopic rods are actually flexible parts, the dynamic analytical modeling is carried out with deformation supplementary equation. Taking the force at the spherical joint as the intermediate variable and the driving force of each active prismatic pair are analytically analyzed by vector cross-product. The modeling was verified by experiment. Compared with previous research methods, the analytical method proposed improves the solution accuracy of driving force slightly and reduces the driving force solution time by 56.28%, which is high efficiency. The maximum error percentage is 1.61%, and the experimental results show that the method of inverse dynamics modeling is practical. This paper can be used for driving force analysis of parallel posture alignment mechanism based on positioner in the field of aircraft assembly.

In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 ${\rm \mu}$m gate lengths are characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC is designed, which has a measured gain higher than 19.3 dB across the frequency band of 33–36 GHz. The driver amplifier exhibits 31.9 dB output power and 26.5% power-added efficiency (PAE) at 35 GHz using 20 V supply voltage with 30% duty cycle. Another two-stage MMIC is realized as a power amplifier with a total output gate periphery of 1.8 mm. The output power and PAE of the power amplifier are measured as 3.91 W and 26.3%, respectively, at 35 GHz using 20 V supply voltage with 30% duty cycle. The high efficiency MMICs presented in this paper exhibit the capabilities of NANOTAM's 0.2 $\rm\mu$m AlGaN/GaN on SiC technology.

In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz.

This paper presents a study of Schottky diode rectenna (rectifying antenna) for radiofrequency (RF) energy-harvesting systems. These rectennas are suitable for wireless sensors with the rechargeable battery technology especially at low-power densities. A rectifying circuit is proposed with single high responsivity Schottky diode for RF–DC conversion. A matching circuit is optimized to improve not only the power transfer between the antenna and the diode, but also to reject harmonic signals. The radiating part is a monopole antenna, with a large bandwidth in the frequency domain and an omni-directional radiation pattern in the azimuthal plane. We show that antenna frequency response takes part in the improvement of the efficiency. The rectifier is integrated with the antenna on a printed circuit board, leading to 30% of size reduction with the same performance. The aim is to reach the highest efficiency with a single tone signal and a compact rectenna. This rectenna was simulated using both Agilent ADS and Ansoft HFSS software. An output DC voltage of 210 mV was measured inside an anechoic chamber which received a single tone signal of 2 µW/cm2 power density. The highest efficiency of 34% was obtained at a power density of 1.3 µW/cm2.

To establish the mechanism of surface change in a continuous polishing system, an ideal mathematical model is built based on Winkler’s hypothesis and the Preston equation. The basic features of the model are the change rates in the surface peak–valley (PV) values of the workpiece, conditioning disk and pitch lap, rather than the specific surface shapes. In addition, an equilibrium state exists in the system, indicating that the surface change rates are all zero. Under equilibrium, the surface of the lap could remain flat, and it is insensitive to the surface error of the workpiece. These characteristics lay the theoretical foundations for high-efficiency and high-precision polishing. The methods to obtain an equilibrium state with flat surfaces are then proposed and confirmed experimentally. High-precision surfaces better than $\frac{{\it\lambda}}{10}~({\it\lambda}=632.8~\text{nm})$ are consistently produced experimentally.

In this paper, the designs and experimental performances of wideband (higher than one octave) high-efficiency, high-power amplifiers (HPA) working in the 1–4 GHz range, using the same GaN process, are presented. They are based on the Bode–Fano integrals, which can be applied to a trade-off calculation between bandwidth and efficiency. Firstly, an microwave intregrated circuits (MIC) wideband HPA, externally matched, is presented. It generates a continuous wave (CW) output power (Pout) greater than 40 W, a power gain (GP) higher than 9.2 dB and a corresponding power added efficiency (PAE) (drain efficiency (DE)) ranged between 36 and 44% (40 and 48%) over the 1–3 GHz bandwidth. Two other amplifiers have been designed upon the same theoretical methodology, with a passive GaAs MMIC circuit technology, enabling to reduce the final size down to 420 mm2. The first internally matched Quasi monolithic microwave intergrated circuits (Quasi-MMIC) single-ended HPA generates a pulsed Pout greater than 25 W, GP higher than 9.8 dB, and a corresponding PAE (DE) ranged between 37 and 52.5% (40 and 55%) over the 2–4 GHz bandwidth. The second internally matched Quasi-MMIC HPA, based on balanced architecture, generates a pulsed Pout higher than 45 W, GP higher than 9.5 dB and PAE (DE) ranged between 33 and 44% (38 and 50%) over the 2–4 GHz bandwidth. These results are among the best ones published in terms of PAE and Pout in instantaneous octave bandwidth in the 1–4 GHz frequency range.

An analysis of operation of a modified inverse class E power amplifier is presented. The proposed amplifier that has a series tunable parallel resonant tank is similar to a hybrid of class F and inverse class E. The principles and design equations required to determine the optimum operation of the amplifier are analyzed in detail. The practical circuit using LDMOS MRF21010 is shown to be able to deliver 40.02 dBm outpout power at 155 MHz. The amplifier achieves power-added efficiency (PAE) of 78.18% and drain efficiency of 78.42%, and exhibits 25.02 dB power gain when operates from a 21 V supply voltage. Comparisons of simulated and measured results are given with good agreement between them being achieved.

This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).

The aim of the present paper is to highlight the possible benefits coming from the use of the GaN high electron-mobility transistor (HEMT) technology in the Doherty power amplifier (DPA) architecture. In particular, the attention is focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs. A deep discussion of the DPA's design guidelines is also presented through the realization of three prototypes implementing different design solutions and working at 2.14 GHz. The first example is a tuned load DPA (TL-DPA), which show an average drain efficiency of 40.7% with 3 W of saturated output power in the obtained 6 dB of output back-off. The second DPA was designed implementing a class F harmonic termination for the main device, which allows an improvement of roughly 15% in output power and efficiency behavior with respect to the TL-DPA. The last DPA was realized implementing a single output matching network for both main and auxiliary devices, which allows a relevant reduction in the size of the resulting DPA, without downgrading the overall performances.

This paper reports an investigation and a proposed solution to design Class E power amplifiers above the theoretical maximum frequency allowed by the adopted active device. Starting from the traditional time domain analysis, a numerical algorithm has been developed and presented in order to extend Class E feasibility through the optimization of the output voltage waveform. A hybrid Class E amplifier in laterally diffused metal oxide semiconductor (LDMOS) technology has been designed and measured. The final amplifier shows an output power of more than 10 W with an associated efficiency of 49% (power added efficiency (PAE) = 45%) over a 100-MHz bandwidth around 2.14 GHz.