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Theory and experimental validation of a Class E PA above theoretical maximum frequency

Published online by Cambridge University Press:  19 June 2009

Elisa Cipriani ,
Paolo Colantonio ,
Franco Giannini  and
Rocco Giofré
Elisa Cipriani*
Affiliation:
Electronic Engineering Department, Università di Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy.
Paolo Colantonio
Affiliation:
Electronic Engineering Department, Università di Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy.
Franco Giannini
Affiliation:
Electronic Engineering Department, Università di Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy.
Rocco Giofré
Affiliation:
Electronic Engineering Department, Università di Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy.
*
Corresponding author: E. Cipriani E-mail: [email protected]
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Abstract

This paper reports an investigation and a proposed solution to design Class E power amplifiers above the theoretical maximum frequency allowed by the adopted active device. Starting from the traditional time domain analysis, a numerical algorithm has been developed and presented in order to extend Class E feasibility through the optimization of the output voltage waveform. A hybrid Class E amplifier in laterally diffused metal oxide semiconductor (LDMOS) technology has been designed and measured. The final amplifier shows an output power of more than 10 W with an associated efficiency of 49% (power added efficiency (PAE) = 45%) over a 100-MHz bandwidth around 2.14 GHz.

Keywords

Class EPower amplifierHigh efficiencyHigh frequencyLDMOS
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 4: European Microwave Week 2008 , August 2009 , pp. 293 - 299
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

REFERENCES

[1]Sokal, N.O.; Sokal, A.D.: Class E – a new class of high efficiency tuned single ended switching power amplifiers. IEEE J. Solid State Circuits, 10 (1975), 168–176.Google Scholar
[2]Ui, N.; Sano, S.: A 45% drain efficiency, −50 dBc ACLR GaN HEMT Class-E amplifier with DPD for W-CDMA base station, in 2006 IEEE International Microwave Symposium Digest, June 2006, 718–721.CrossRefGoogle Scholar
[3]Wang, Narisi; Peng, Xinli; Yousefzadeh, V.; Maksimovic, D.; Pajic, S.; Popovic, Z.: Linearity of X-band class-E power amplifiers in EER operation. IEEE Trans. Microwave Theory Tech., MTT-53, 3 (Part 2) (2005), 1096–1102.CrossRefGoogle Scholar
[4]Mader, T.B.; Bryerton, E.W.; Markovic, M.; Forman, M.; Popovic, Z.: Switched-mode high-efficiency microwave power amplifiers in a free-space power-combiner array. IEEE Trans. Microwave Theory Tech., MTT-46, 10 (Part 1) (1998), 1391–1398.CrossRefGoogle Scholar
[5]Popp, J.; Lie, D.Y.C.; Wang, Feipeng; Kimball, D.; Larson, L.: Fully-integrated highly-efficient RF Class E SiGe power amplifier with an envelope-tracking technique for EDGE applications, in Proc. Radio and Wireless Symp., January 2006, 231–234.Google Scholar
[6]Milosevic, D.; van der Tang, J.; van Roermund, A.: A high-efficiency HBT-based class-E power amplifier for 2 GHz, in Proc. Gallium Arsenide and Other Semiconductor Application Symp., 2005, EGAAS 2005, Paris, France, October 2005, 45–48.Google Scholar
[7]Litwin, A.; Chen, Q.; Johansson, J.; Ma, G.; Olofsson, L.A.; Perugupalli, P.: High power LDMOS technology for wireless infrastructure, in Proc. Gallium Arsenide Applications Symp., GAAS 2001, London, September 2001.Google Scholar
[8]Colantonio, P.; Giannini, F.; Giofrè, R.; Yarleque Medina, M.A.; Schreurs, D.; Nauwelaers, B.: High frequency Class E design methodologies, in Proc. Gallium Arsenide Applications Symp., GAAS 2005, Paris, France, October 2005, 329–331.Google Scholar
[9]Raab, F.H.: Class-E, Class-C and Class-F power amplifiers based upon a finite number of harmonics. IEEE Trans. Microwave Theory Tech., MTT-49 (2001), 1462–1468.CrossRefGoogle Scholar
[10]Cipriani, E.; Colantonio, P.; Giannini, F.; Giofrè, R.: Optimization of Class E power amplifiers above theoretical maximum frequency, in Proc. European Microwave Conf., EuMC 2008, Amsterdam, The Netherland, October 2008, 1541–1544.CrossRefGoogle Scholar