Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
  1. Home
  2. Search

Refine search

Refine search

Access:
Content type:
Publication date:
Apply   From and To filters
Subject: Show more
Journals Show more
Publishers: Show more
Societies Show more
Series: Show more
Collections: Show more

Actions for selected content:

Select all | Deselect all
  • View selected items
  • Export citations
  • Download PDF (zip)
  • Save to Kindle
  • Save to Dropbox
  • Save to Google Drive

Save Search

You can save your searches here and later view and run them again in "My saved searches".

Please provide a title, maximum of 40 characters.
Cancel
×

1 results

  • Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance

  • Ali Alaeddine, Moncef Kadi, Kaouther Daoud, Hichame Maanane, Philippe Eudeline
  • Journal:
    International Journal of Microwave and Wireless Technologies / Volume 1 / Issue 6 / December 2009
    Published online by Cambridge University Press:
    07 January 2010, pp. 475-482

  • This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupling phenomenon between the electromagnetic field and the micro-strip lines connecting the transistor are evaluated by electromagnetic and electrical simulations. After stress, the input and the transmission scattering parameters are affected. This is primarily due to the deviation of the input impedance and the reduction of the transconductance, respectively. The stress effects have been related to a base current degradation. This degradation is due to a hot carrier introducing generation/recombination trap centers at the Si/SiO2 interface of the emitter–base spacer oxide, which leads to an excess recombination base current.