Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-24T08:30:23.386Z Has data issue: false hasContentIssue false
  • English
  • Français

Genetic-based optimization of a multi insulator tunneling diode for THz energy harvesting

Published online by Cambridge University Press:  17 March 2020

Mazen Shanawani Open the ORCID record for Mazen Shanawani [Opens in a new window] ,
Diego Masotti  and
Alessandra Costanzo Open the ORCID record for Alessandra Costanzo [Opens in a new window]
Mazen Shanawani*
Affiliation:
Department of Electrical, Electronic and Information Engineering, Edificio Storico, via. del Risorgimento 2, 40136, Bologna, Italy
Diego Masotti
Affiliation:
Department of Electrical, Electronic and Information Engineering, Edificio Storico, via. del Risorgimento 2, 40136, Bologna, Italy
Alessandra Costanzo
Affiliation:
Department of Electrical, Electronic and Information Engineering, Edificio Storico, via. del Risorgimento 2, 40136, Bologna, Italy
*
Author for correspondence: Mazen Shanawani, E-mail: [email protected]
Get access

Abstract

The deployment of multi-insulator tunneling diodes has recently had more attention to be used as rectifiers in energy harvesting rectennas with good potentiality for a millimeter and terahertz range. However, with the rather complicated math to obtain the current–voltage relation, it is difficult to evaluate the design figures of merit (FOM)s such as asymmetry, nonlinearity, responsivity, and dynamic resistance and monitor the impact of changing physical parameters on them. This complicates the decision-making process for the required physical parameters. In this work, a heuristic optimization framework using genetic algorithm is suggested using the transfer matrix method to find the combination of physical parameters which satisfies the minimum required FOM set by users and weighted by their preference.

Keywords

Energy harvestingrectennasmm waveTHztunnel diodes
Type
Research Article
Information
Wireless Power Transfer , Volume 7 , Issue 1 , March 2020 , pp. 60 - 64
Copyright
Copyright © The Author(s), 2020. Published by Cambridge University Press

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

5GAmericas (2017) White paper on 5g spectrum recommendations. Available at https://www.5gamericas.org/wp-content/uploads/2019/07/5GA_5G_Spectrum_Recommendations_2017_FINAL.pdf.Google Scholar
Arrow Magazine (2019) What frequency spectrum will 5G technology use and how does this compare to 4G?. Available at https://www.arrow.com/en/research-and-events/articles/what-frequency-spectrum-will-5g-technology-use-and-how-does-this-compare-to-4g.Google Scholar
Hossain, E, Rasti, M, Tabassum, H and Abdelnasser, A (2014) Evolution toward 5g multi-tier cellular wireless networks: an interference management perspective. IEEE Wireless Communications 21, 118–127. ISSN .CrossRefGoogle Scholar
Moulin, N, Amara, M, Mandorlo, F and Lemiti, M (2019) Tunnel junction I(V) characteristics: review and new model for p-n homojunction. Journal of Applied Physics 126, 033105.CrossRefGoogle Scholar
Shanawani, M, Masotti, D and Costanzo, A (2017) THz rectennas and their design rules. Electronics 6, 99.CrossRefGoogle Scholar
Hayt, WH and Buck, JA (2001) Engineering Electromagnetics, vol. 6. McGraw-Hill, New York.Google Scholar
Moddel, G (2013) Will rectenna solar cells be practical? In Moddel, G and Grover, S (eds), Rectenna Solar Cells. New York, NY: Springer, pp. 3–24.CrossRefGoogle Scholar
Ghatak, AK, Thyagarajan, K and Shenoy, MR (1988) A novel numerical technique for solving the one-dimensional Schrodinger equation using matrix approach-application to quantum well structures. IEEE Journal of Quantum Electronics 24, 1524–1531.CrossRefGoogle Scholar
Grover, S and Moddel, G (2012) Engineering the current–voltage characteristics of metal–insulator–metal diodes using double-insulator tunnel barriers. Solid-State Electronics 67, 94–99.CrossRefGoogle Scholar
Hashem, IE, Rafat, NH and Soliman, EA (2013) Theoretical study of metal-insulator-metal tunneling diode figures of merit. IEEE Journal of Quantum Electronics 49, 72–79.CrossRefGoogle Scholar
Mitrovic, IZ, Weerakkody, AD, Sedghi, N, Hall, S, Ralph, JF, Wrench, JS, Chalker, PR, Luo, Z and Beeby, S (2016) Tunnel-barrier rectifiers for optical nantennas. ECS Transactions 72, 287–299.CrossRefGoogle Scholar
Herner, SB, Belkadi, A, Weerakkody, A, Pelz, B and Moddel, G (2018) Responsivity–resistance relationship in MIIM diodes. IEEE Journal of Photovoltaics 8, 499–504.CrossRefGoogle Scholar
Slater, JC (1964) Atomic radii in crystals. The Journal of Chemical Physics 41, 3199–3204.CrossRefGoogle Scholar
Grover, S (2013) Metal-insulator diode simulator. Available at http://ecee.colorado.edu/~moddel/QEL/MIMDiodeSim.zip.Google Scholar
Jonsson, B and Eng, ST (1990) Solving the Schrödinger equation in arbitrary quantum-well potential profiles using the transfer matrix method. IEEE Journal of Quantum Electronics 26, 2025–2035. ISSN .CrossRefGoogle Scholar
Li, W (2010) Generalized free wave transfer matrix method for solving the Schrödinger equation with an arbitrary potential profile. IEEE Journal of Quantum Electronics 46, 970–975. ISSN .CrossRefGoogle Scholar
Pujol, O, Carles, R and Pérez, J-P (2014) Quantum propagation and confinement in 1d systems using the transfer-matrix method. European Journal of Physics 35, 035025.CrossRefGoogle Scholar
Simmons, JG (1963) Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film. Journal of applied physics 34, 1793–1803.CrossRefGoogle Scholar
Probst, OM (2002) Tunneling through arbitrary potential barriers and the apparent barrier height. American Journal of Physics 70(11), 1110–1116.CrossRefGoogle Scholar
The MathWorks, Inc (2018) MATLAB R2018b Optimization Toolbox 8.1. Available at https://uk.mathworks.com/help/gads/genetic-algorithm.html.Google Scholar
Aldrigo, M, Dragoman, M, Modreanu, M, Povey, I, Iordanescu, S, Vasilache, D, Dinescu, A, Shanawani, M and Masotti, D (2018) Harvesting electromagnetic energy in the V-band using a rectenna formed by a bow tie integrated with a 6-nm-thick au/hfo2/pt metal–insulator–metal diode. IEEE Transactions on Electron Devices 65, 2973–2980. ISSN .CrossRefGoogle Scholar