Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-21T10:11:48.075Z Has data issue: false hasContentIssue false
  • English
  • Français

Semiconducting properties of Tm doped Yb-ZnO films by spray pyrolysis

Published online by Cambridge University Press:  25 November 2014

Imane Chaki ,
Azzam Belayachi ,
Toufik El Bahraoui ,
Mohamed Regragui  and
Mohamed Abd-Lefdil
Imane Chaki
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
Azzam Belayachi
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
Toufik El Bahraoui
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
Mohamed Regragui
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
Mohamed Abd-Lefdil*
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
*
ae-mail: [email protected]
Get access

Abstract

In this work, we have investigated the structural, optical and electrical properties of rare earth co-doped zinc oxide thin films prepared by spray pyrolysis technique. X-ray diffraction has shown that the films are polycrystalline and textured with the c-axis of the wurtzite structure along the growth direction. Scanning electronic microscopy and transmission electronic microscopy were used to study the films composition and morphology. Photoluminescence measurements showed that all the films have a strong emission band at around 380 nm. Layers with electrical resistivity values as low as 5.7 × 10−2 Ω cm were obtained.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 68 , Issue 3 , December 2014 , 30301
Copyright
© EDP Sciences, 2014

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Li, Y., Zhao, X., Fan, W., J. Phys. Chem. C 115, 3552 (2011)CrossRef
Li, L., Wang, W., Liu, H., Liu, X., Song, Q., Ren, S., J. Phys. Chem. C 113, 8460 (2009)CrossRef
Chakraborty, R., Das, U., Mohanta, D., Choudhury, A., Indian J. Phys. 83, 553 (2009)CrossRef
Lee, S.W., Cho, H.D., Panin, G., Kang, T.W., Appl. Phys. Lett. 98, 1 (2011)
Yang, W. et al., Appl. Surf. Sci. 255, 5669 (2009)CrossRef
Balestrieri, M., Ferblantier, G., Colis, S., Schmerber, G., Ulhaq-Bouillet, C., Muller, D., Slaoui, A., Dinia, A., Sol. Energy Mater Sol. Cells 117, 363 (2013)CrossRef
Douayar, A., Belayachi, A., Abd-Lefdil, M., Nouneh, K., Laghfour, Z., Kityk, I.V., Slezak, A., Miedzisnki, R., J. Alloys Compd. 550, 345 (2013)CrossRef
Douayar, A., Prieto, P., Schmerber, G., Nouneh, K., Diaz, R., Chaki, I., Colis, S., El Fakir, A., Hassanain, N., Belayachi, A., Sekkat, Z., Slaoui, A., Dinia, A., Abd-Lefdil, M., Eur. Phys. J. Appl. Phys. 61, 10304 (2013)CrossRef
Qu, X., Lü, S., Jia, D., Zhou, S., Meng, Q., Mater. Sci. Semicond. Process 16, 1057 (2013)CrossRef
Kenyon, A.J., Prog. Quantum Electron. 26, 225 (2002)CrossRef
Shinde, S.S., Shinde, P.S., Pawar, S.M., Moholkar, A.V., Bhosale, C.H., Rajpure, K.Y., Solid State Sci. 10, 1209 (2008)CrossRef
Soumahoro, I., Schmerber, G., Douayar, A., Colis, S., Abd-Lefdil, M., Hassanain, N., Berrada, A., Muller, D., Slaoui, A., Rinnert, H., Dinia, A., J. Appl. Phys. 109, 033708 (2011)CrossRef
Scherrer, P., Göttinger Nachrichten Gesell. 2, 98 (1918)
Shannon, R.D., Acta Cryst. A 32, 751 (1976)CrossRef
Prabahar, S., Dhanam, M., J. Cryst. Growth 285, 41 (2005)CrossRef
Behera, D., Acharya, B.S., J. Lumin. 128, 1577 (2008)CrossRef
Petersen, J., Brimont, C., Gallart, M., Crégut, O., Schmerber, G., Gilliot, P., Hönerlage, B., Ulhaq-Bouillet, C., Rehspringer, J.L., Leuvrey, C., Colis, S., Slaoui, A., Dinia, A., Microelectronics J. 40, 239 (2009)CrossRef
Behera, D., Acharya, B.S., J. Lumin. 128, 1577 (2008)CrossRef
Reynolds, D.C., Look, D.C., Jogai, B., Litton, C.W., Collins, T.C., Harsch, W., Cantwell, G., Phys. Rev. B: Condens. Matter 57, 12151 (1998)CrossRef
Thonke, K., Gruber, T., Teofilov, N., Schönfelder, R., Waag, A., Sauer, R., Phys. B: Condens. Matter 945, 308 (2001)
Kong, Y.C., Yu, D.P., Zhang, B., Fang, W., Feng, S.Q., Appl. Phys. Lett. 78, 407 (2001)CrossRef
Teng, X.M., Fan, H.T., Pan, S.S., Ye, C., Li, G.H., J. Phys. D: Appl. Phys. 39, 471 (2006)CrossRef
Xu, P.S., Sun, Y.M., Shi, C.S., Xu, F.Q., Pan, H.B., Nucl. Instrum. Methods Phys. Res. B 199, 286 (2003)CrossRef
Mahamuni, S., Borgohain, K., Bendre, B.S., Leppert, V.J., Risbud, S.H., J. Appl. Phys. 85, 2861 (1999)CrossRef
Srinet, G., Varshneya, P., Kumar, R., Sajal, V., Kulriya, P.K., Knobel, M., Sharma, S.K., Ceram. Int. 39, 6077 (2013)CrossRef
Zeferino, R.S., Flores, M.B., Pal, U., J. Appl. Phys. 109, 014308 (2011)CrossRef
Ellmer, K., J. Phys. D: Appl. Phys. 34, 3097 (2001)CrossRef
Gu, X.Q., Zhu, L.P., Ye, Z.Z., Ma, Q.B., He, H.P., Zhang, Y.Z., Zhao, B.H., Sol. Energy Mater Sol. Cells 92, 343 (2008)CrossRef