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Growth of single-phase Cu(In, Al)S2 thin films by thermal evaporation

Published online by Cambridge University Press:  13 April 2011

F. Smaïli
F. Smaïli*
Affiliation:
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, ENIT, BP 37, Le Belvédère 1002, , ENIT, BP 37, Le Belvédère 1002, Tunis, Tunisia
*
[email protected]
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Abstract

CuIn1- x Alx S2 (CIAS) thin films with different compositions were deposited by the evaporation of the powder of CuIn1- x Alx S2 on to glass substrates heated at 200 °C. The different thin films were obtained with increasing the content aluminium in the powder. Structural, morphological and optical properties of the films were studied in function of the Al content. Polycrystalline CIAS thin films orientated preferentially along the (112) plane were obtained. Then the crystallites have a similar shape as that of all as-deposited films. The incorporation of aluminium atoms moves the main absorption on the left with varied band gap between 1.5 eV and 1.90 eV.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 54 , Issue 1 , April 2011 , 10304
Copyright
© EDP Sciences, 2011

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