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Post-annealed silicon nanocrystal formation on substoichiometric SiOx Ny (x < 2, y < 1) layers deposited in SiH4-N2O radiofrequency discharges

Published online by Cambridge University Press:  25 May 2006

M. Bedjaoui ,
B. Despax ,
M. Caumont  and
C. Bonafos
M. Bedjaoui*
Affiliation:
LGET, 118 route de Narbonne, 31062 Toulouse, France
B. Despax
Affiliation:
LGET, 118 route de Narbonne, 31062 Toulouse, France
M. Caumont
Affiliation:
LGET, 118 route de Narbonne, 31062 Toulouse, France
C. Bonafos
Affiliation:
CEMES, 29 rue J. Marvig, 31055 Toulouse, France
*
[email protected]
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Abstract

In this work is presented a detailed physicochemical, structural and optical characterization of SiOx Ny thin films. The films deposited using PECVD in SiH4-N2O-He discharges were thermally annealed at 1273 K for 1 hour in ambient nitrogen. The film stochiometry was measured by Rutherford Backscattering Spectroscopy. The chemical composition was dominated by silicon suboxide containing some Si-N and Si-H bonds. Raman scattering measurements suggest the formation of nanocrystallite silicon in the annealed films. The Raman observation is strongly supported by Transmission Electron Microscopy analysis which shows a high density of silicon nanocrystals, having a mean radius ranging between 3 and 6 nm. Using Spectroscopic Ellipsometry, we discussed the dielectric function evolution as a function of the deposition parameters.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 34 , Issue 2: 15th International Colloquium on Plasma processes (CIP 2005) , May 2006 , pp. 147 - 150
Copyright
© EDP Sciences, 2006

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