Thick oxide MOS transistors for ionizing radiation dose measurement

G. SARRABAYROUSE; F. GESSINN

doi:10.1051/radiopro/1994006

Abstract

Les principales propriétés des dosimètres de rayonnement métal-oxyde-semi-conducteur (MOS) sont décrites. Nous présentons les résultats obtenus pour la sensibilité et la stabilité des dosimètres à oxyde de grille épais qui montrent que ce composant a des applications en dosimétrie des personnels et en médecine. Nous discuterons brièvement les améliorations possibles de la sensibilité.

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Thick oxide MOS transistors for ionizing radiation dose measurement

Abstract

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This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Article contents

Thick oxide MOS transistors for ionizing radiation dose measurement

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