Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-30T22:02:34.149Z Has data issue: false hasContentIssue false
  • English
  • Français

Thickness determination of SmCo films on silicon substrates utilizing X-ray diffraction

Published online by Cambridge University Press:  29 February 2012

Isaac Vander ,
R. W. Zuneska  and
F. J. Cadieu
Isaac Vander
Affiliation:
Physics Department, Queens College of CUNY, Flushing, New York 11367
R. W. Zuneska
Affiliation:
Physics Department, Queens College of CUNY, Flushing, New York 11367
F. J. Cadieu*
Affiliation:
Physics Department, Queens College of CUNY, Flushing, New York 11367
*
a)Author to whom correspondence should be addressed. Electronic mail: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper presents a nondestructive measurement technique for the determination of the film thicknesses of Co and SmCo based magnetic films deposited by sputtering on single-crystal silicon (100) substrates. X-ray diffraction of Cu Kα radiation has been used to measure the intensity of the (400) reflection from bare silicon substrates and as attenuated by sputter coated Co and SmCo based films on Si substrates. A four-axis research diffractometer allowed the substrate orientation to be fine adjusted to maximize the (400) diffraction intensity. The thickness of SmCo based films was in a range from 0.05 to 5 μm. Co film thicknesses on Si could be measured to a few tens of nanometers. The accuracy of the thickness measurements depends on the effective mass attenuation coefficient of the film material. For the materials considered, the thicknesses determined by the X-ray attenuation method agree within at least several percent to values determined by other methods.

Keywords

thin-film thicknessX-ray attenuationSmCo films
Type
Technical Articles
Information
Powder Diffraction , Volume 25 , Issue 2 , June 2010 , pp. 149 - 153
Copyright
Copyright © Cambridge University Press 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Azaroff, L. V. (1968). Elements of X-ray Crystallography (McGraw-Hill, New York), pp. 203–209.Google Scholar
Cadieu, Francombe F. J. (1992). Physics of Thin Films, edited by M., and Vossen, J. (Academic, San Diego), Vol. 16, pp. 203–205.Google Scholar
Cadieu, Adam F. J. (2000). Magnetic Film Devices, Handbook of Thin Film Devices Technology and Applications, edited by J. D., and Francombe, M. H. (Academic, New York), Chap. 1, pp. 8–13.Google Scholar
Chaudhuri, J. and Shah, S. (1990). “Thickness measurement of thin films by X-ray absorption,” Mater. Res. Soc. Symp. Proc. MRSPDH 161, 83–88.CrossRefGoogle Scholar
Cheng, D. I., Rumpler, J. J. II, Perkins, J. M., Zahn, M., Fonstad, C. G. Jr., Cramer, E. S., Zuneska, R. W., and Cadieu, F. J. (2009). “Use of patterned magnetic films to retain and orient micro-components during fluidic assembly,” J. Appl. Phys. JAPIAU 105, 07C123.10.1063/1.3076146CrossRefGoogle Scholar
Hegde, H., Qian, X. R., Ahn, J. -G., and Cadieu, F. J. (1996). “High-temperature magnetic properties of TbCu7-type SmCo-based films,” J. Appl. Phys. JAPIAU 79, 5961–5967.10.1063/1.362120CrossRefGoogle Scholar
Parker, R. J. (1990). Advances in Permanent Magnetism (Wiley, New York), pp. 82–86.Google Scholar