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Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation

Published online by Cambridge University Press:  29 February 2012

P. Zaumseil ,
A. Giussani  and
T. Schroeder
P. Zaumseil*
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt, Oder, Germany
A. Giussani
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt, Oder, Germany
T. Schroeder
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt, Oder, Germany
*
Author to whom correspondence should be addressed. Electronic mail: [email protected]
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Abstract

It is demonstrated that a complex X-ray characterization of semiconductor films epitaxially grown on metal oxide buffer layers and Si(111) substrates is possible using laboratory-based equipment. This is demonstrated with epi-germanium on Pr2O3 as buffer material. Pole figure measurements prove that epi-Ge layers are nearly single crystalline with exactly the same in-plane orientation (type A) as the Si(111) substrate, while the lattice of the oxide layer is 180° rotated around the [111] surface normal (type B). Only a small fraction (less than 0.6 vol %) of the epi-Ge exhibits type B rotation twins. The main structural defects are microtwin lamellas lying in {111} planes 70.5° inclined to the wafer surface. The different in-plane orientation of the Si substrate and epi-Ge on one side and the Pr2O3 buffer layer on the other side allows a very sensitive analysis of strain and defects even for a 10-nm oxide layer buried under a 100-nm Ge. The epi-Ge layers are nearly fully relaxed and the Pr2O3 buffer layer is compressively strained. Due to the existing defects the Ge (111) planes are tilted in a characteristic pattern relative to the Si substrate.

Keywords

XRDXRRheteroepitaxyengineered silicon waferTEM
Type
Technical Articles
Information
Powder Diffraction , Volume 25 , Issue 2 , June 2010 , pp. 92 - 98
Copyright
Copyright © Cambridge University Press 2010

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