Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-24T07:46:26.447Z Has data issue: false hasContentIssue false
  • English
  • Français

X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

Published online by Cambridge University Press:  06 March 2012

G. Juárez-Díaz ,
H. Solache-Carranco ,
G. Romero-Paredes R. ,
R. Peña-Sierra ,
J. Martínez-Juárez ,
R. Galeazzi ,
A. Esparza-García ,
M. Briseño-García  and
J. A. Henao
G. Juárez-Díaz
Affiliation:
Depto. de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apartado Postal 14-740, 07000 Ciudad de México, Distrito Federal, México
H. Solache-Carranco
Affiliation:
Depto. de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apartado Postal 14-740, 07000 Ciudad de México, Distrito Federal, México
G. Romero-Paredes R.
Affiliation:
Depto. de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apartado Postal 14-740, 07000 Ciudad de México, Distrito Federal, México
R. Peña-Sierra
Affiliation:
Depto. de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apartado Postal 14-740, 07000 Ciudad de México, Distrito Federal, México
J. Martínez-Juárez
Affiliation:
Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, 14 Sur y Av. San Claudio, 72570 Puebla, Puebla, Mexico
R. Galeazzi
Affiliation:
Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, 14 Sur y Av. San Claudio, 72570 Puebla, Puebla, Mexico
A. Esparza-García
Affiliation:
Centro de Ciencias Aplicadas y Desarrollo de Tecnología-UNAM, Ciudad Universitaria, Apartado Postal 04510, Ciudad de México, Distrito Federal, México
M. Briseño-García
Affiliation:
Centro de Ciencias Aplicadas y Desarrollo de Tecnología-UNAM, Ciudad Universitaria, Apartado Postal 04510, Ciudad de México, Distrito Federal, México
J. A. Henao
Affiliation:
Grupo de Investigación en Química Estructural (GIQUE), Escuela de Química, Universidad Industrial, de Santander (UIS), Apartado Aéreo 678, Bucaramanga, Colombia
Get access Rights & Permissions [Opens in a new window]

Abstract

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

Keywords

ZnOpolycrystalline filmssputteringX-ray diffractionphotoluminescence
Type
Technical Articles
Information
Powder Diffraction , Volume 23 , Special Issue S1 , March 2008 , pp. S94 - S97
Copyright
Copyright © Cambridge University Press 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Cohen, D.J., Ruthe, K.C., and Barnett, S.A. (2004). “Transparent conducting Zn1−xMgxO:(Al,In) thin films,” J. Appl. Phys.JAPIAU 96, 459–467. jap, JAPIAU CrossRefGoogle Scholar
Ellmer, K. (2000). “Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties,” J. Phys. DJPAPBE 33, R17–R32. jpd, JPAPBE CrossRefGoogle Scholar
Esparza, A. (2004). “Síntesis y caracterización de películas delgadas de oxido de titanio y oxido de tungsteno, por la técnica de erosión catódica para su aplicación al sensado de gases,” Magíster thesis, Electric Engineering Department, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), IPN No. 2508, Ciudad de México, México (in Spanish).Google Scholar
Hao, X.-T., Tan, L.-W., Ong, K.-S., and Zhu, F. (2006). “High-performance low-temperature transparent conducting aluminum-doped ZnO thin films and applications,” J. Cryst. GrowthJCRGAE 287, 44–47. jcr, JCRGAE CrossRefGoogle Scholar
ICDD (2006). “Powder Diffraction File,” International Centre for Diffraction Data, edited by McClune, W. F., Newtown Square, PA, 19073-3272.Google Scholar
Jeong, T.S., Han, M.S., Youn, C.J., and Park, Y.S. (2004). “Raman scattering and photoluminescence of As ion-implanted ZnO single crystal,” J. Appl. Phys.JAPIAU 96, 175–179. jap, JAPIAU CrossRefGoogle Scholar
Lee, S.Y., Shim, E.S., Kang, H.S., Pang, S.S., and Kang, J.S. (2005). “Fabrication of ZnO thin film diode using laser annealing,” Thin Solid FilmsTHSFAP 473, 31–34. tsf, THSFAP CrossRefGoogle Scholar
Nomura, K., Kamiya, T., Ohta, H., Ueda, K., Hirano, M., and Hosono, H. (2004). “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films,” Appl. Phys. Lett.APPLAB 85, 1993–1995. apl, APPLAB CrossRefGoogle Scholar
Özgür, Ü., Alivov, Y.I., Liu, C., Teke, A., Reshchikov, M.A., Dog˘an, S., Avrutin, V., Cho, S.-J., and Morkoç, H. (2005). “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.JAPIAU 98, 041301–041404. jap, JAPIAU CrossRefGoogle Scholar
Reynolds, D.C., Look, D.C., Jogai, B., Litton, C.W., Collins, T.C., Harsch, W., and Cantwell, G. (1998). “Neutral-donor-bound-exciton complexes in ZnO crystals,” Phys. Rev. B: Condens. Matter 57, 12151–12155.CrossRefGoogle Scholar
Vanheusden, K., Warren, W.L., Seager, C.H., Tallant, D.R., Voigt, J.A., and Gnade, B.E. (1996). “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys.JAPIAU 79, 7983–7990. jap, JAPIAU CrossRefGoogle Scholar