We performed first-principles calculations to obtain the phonon deformation potential (PDP) constants of wurtzite ZnO. The results are in good agreement with available experimental data except for a few PDP constants. We also found that the phonon frequencies of the A1 and B2 modes have relatively stronger nonlinear characteristics than the other modes.

This paper investigated the silicon substrate orientation dependence on the electrical properties of high-κ HfN gate insulator formed by electron-cyclotron-resonance (ECR) plasma sputtering. The effect of N2/4.9%H2 forming-gas annealing (FGA) was studied. By using N2/4.9%H2 FGA at 500°C for 20 min, the interfacial layer (IL) formation was not formed and led to the zero-interface layer (ZIL). The EOTs of 0.47 and 0.51 nm with leakage current of 1.1 and 1.4 A/cm2 (@VFB -1 V) were obtained on p-Si(100) and p-Si(110), respectively. The density of interface states (Dit) with the order of 1011 cm-2eV-1 was obtained on both p-Si(100) and p-Si(110). This suggests that the direct deposition of HfN film with ZIL prevented the degradation of electrical characteristics on the p-Si(100) and p-Si(110) substrate in comparison to the case of oxide-based hafnium gate insulator.