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Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering

Published online by Cambridge University Press:  20 February 2014

Nithi Atthi ,
Dae-Hee Han  and
Shun-ichiro Ohmi
Nithi Atthi
Affiliation:
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Dae-Hee Han
Affiliation:
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Shun-ichiro Ohmi
Affiliation:
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Abstract

This paper investigated the silicon substrate orientation dependence on the electrical properties of high-κ HfN gate insulator formed by electron-cyclotron-resonance (ECR) plasma sputtering. The effect of N2/4.9%H2 forming-gas annealing (FGA) was studied. By using N2/4.9%H2 FGA at 500°C for 20 min, the interfacial layer (IL) formation was not formed and led to the zero-interface layer (ZIL). The EOTs of 0.47 and 0.51 nm with leakage current of 1.1 and 1.4 A/cm2 (@VFB -1 V) were obtained on p-Si(100) and p-Si(110), respectively. The density of interface states (Dit) with the order of 1011 cm-2eV-1 was obtained on both p-Si(100) and p-Si(110). This suggests that the direct deposition of HfN film with ZIL prevented the degradation of electrical characteristics on the p-Si(100) and p-Si(110) substrate in comparison to the case of oxide-based hafnium gate insulator.

Keywords

insulatorsputteringthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1588: Symposium E – Functional Oxide Thin Films and Heterostructures for Innovative Devices , 2014 , jsapmrs13-1588-6607
Copyright
Copyright © Materials Research Society 2014 

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