Polysiloxene-based films have been prepared by plasma enhanced CVD in a Si2H6+O2 gas mixture at a substrate temperature of −110°C and annealed at temperatures from 700°C to 1000°C. It is found that the film annealed at 1000°C is composed of 1∼5nm Si crystallites embedded in SiO2 and exhibits stable, intense visible-luminescence at room temperature under 488nm excitation. The temperature and excitation power dependences of the steady-state and timeresolved luminescence of the annealed films suggest the radiative recombination through localized states in the Si/SiO2 interface region.

A simple apparatus is described to rapidly assess the Electrochromic effect of Alkali and Transition Metal species of intercalated Fullerene thin films. Optical transmission loss during the Coloring phase is monitored at 880, 635, 583 and 565 nm while electrochemical intercalation proceeds. The process is repeated during the reverse polarity Bleaching phase. Results are presented for electrolyte systems based on Butyrolactone or water for Ag, Cr, Cu, Mg and Ba species.

In order to elucidate the degradation of the electrical properties of AlInAs/GaInAs high electron mobility transistors during thermal treatment due to the fluorine contamination, the material dependence of this phenomenon has been investigated in AIxGayIn1−x−y As and AlxGayIn1−x−y P systems. The thermal degradation is found to be peculiar to the material containing both of AlAs and InAs, and most serious degradation occurs when the compositional ratio of AlAs to InAs is 1:1. It is also observed that donor-fluorine bonds are formed in the thermally annealed n-type AlInAs layers. The thermal degradation is thought to be due to the fscattering effect of the donorfluorine complex.