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X-RAY Double Crystal Analysis of Structure and Stress Relaxation in Solid Phase Epitaxial CaF2 and Ge/CaF2 Films on (111) Si by in Situ Rapid Isothermal Processing

Published online by Cambridge University Press:  25 February 2011

J. Chaudhuri ,
F. Hashmi ,
R. Singh  and
R. P. S. Thakur
J. Chaudhuri
Affiliation:
Mechanical Engineering Dept., Wichita State University, Wichita, KS 67208
F. Hashmi
Affiliation:
Mechanical Engineering Dept., Wichita State University, Wichita, KS 67208
R. Singh
Affiliation:
Dept. of Elect. and Computer Eng., Clemson Univ., Clemson, SC 29634
R. P. S. Thakur
Affiliation:
School of Elect. Eng. and Computer Sc., Univ. of Oklahoma, Norman, OK 73019
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Abstract

Planar strain in CaF2 and Ge/CaF2 films grown on (111) Si substrate has been measured by an x-ray double crystal diffraction technique using rocking curves. The films grown by a solid phase epitaxial approach using in situ rapid isothermal processing are found to have small tensile planar strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 199
Copyright
Copyright © Materials Research Society 1991

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References

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