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Use of isotopically pure silicon material to estimate silicon diffusivity in silicon dioxide

Published online by Cambridge University Press:  21 March 2011

D. Tsoukalas ,
C. Tsamis  and
P. Normand
D. Tsoukalas
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos’ 15310 Aghia Paraskevi, Greece
C. Tsamis
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos’ 15310 Aghia Paraskevi, Greece
P. Normand
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos’ 15310 Aghia Paraskevi, Greece
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Abstract

In this paper we report measurement of the silicon diffusion coefficient in silicon dioxide films using isotopically enriched 28Si silicon dioxide layers. 30Si atoms are introduced in excess in a stoichiometric isotopically pure silicon dioxide layer either by ion implantation or by a predeposition technique and the time evolution of the 30Si concentration profile under various thermal conditions is monitored using SIMS. The estimated diffusivity values are significantly higher than previouslyreported values for Si diffusion within a stoichiometric oxide and closer to reported values for excess Si diffusion within an oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J3.7
Copyright
Copyright © Materials Research Society 2001

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References

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