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Uniform and Directed Crystallization of Deposited a­Si on Glass Substrates at Linear Velocities Of 1 to 20 Meters Per Second

Published online by Cambridge University Press:  15 February 2011

D. Bensahel ,
G. Auvert ,
V. T. Nguyen  and
G. A. Rozgonyi
D. Bensahel
Affiliation:
Centre National d'Etudes des Telecommunications, CNS 38240, Meylan ­ FRANCE.
G. Auvert
Affiliation:
Centre National d'Etudes des Telecommunications, CNS 38240, Meylan ­ FRANCE.
V. T. Nguyen
Affiliation:
Centre National d'Etudes des Telecommunications, CNS 38240, Meylan ­ FRANCE.
G. A. Rozgonyi
Affiliation:
Centre National d'Etudes des Telecommunications, CNS 38240, Meylan ­ FRANCE.
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Abstract

It has been found that careful control of the laser power and scan speed will convert deposited a­Si into continuous lines of uniformly crystallized silicon. Two solid phase “explosive” crystallization front velocities of 1000 cm/sec and 1400 cm/sec have been experimentally determined by matching the laser scan velocity with the runaway a–c phase boundary. If solid phase explosive crystallization is suppressed by pre-annealing, then a liquid assisted runaway crystallization velocity of 220 cm/sec is observed, as well as a continuous furnace-like crystallization process at 250 cm/sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 541
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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