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Thermoelectric Properties of the Half-Heusler Compound (Zr,Hf)(Ni,Pd)Sn

Published online by Cambridge University Press:  10 February 2011

V. M. Browning ,
S. J. Poon ,
T. M. Tritt ,
A. L Pope ,
S. Bhattacharya ,
P. Volkov ,
J. G. Song ,
V. Ponnambalam  and
A. C. Ehrlicha
V. M. Browning
Affiliation:
Naval Research Laboratory, Washington, DC 20375
S. J. Poon
Affiliation:
University of Virginia, Charlottesville, VA 22904
T. M. Tritt
Affiliation:
Clemson University, Clemson, SC 29634
A. L Pope
Affiliation:
Clemson University, Clemson, SC 29634
S. Bhattacharya
Affiliation:
Clemson University, Clemson, SC 29634
P. Volkov
Affiliation:
University of Virginia, Charlottesville, VA 22904
J. G. Song
Affiliation:
University of Virginia, Charlottesville, VA 22904
V. Ponnambalam
Affiliation:
University of Virginia, Charlottesville, VA 22904
A. C. Ehrlicha
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Recent measurements of the thermoelectric transport properties of a series of the half- Heusler compound ZrNiSn are presented. These materials are known to be bandgap intermetallic compounds with relatively large Seebeck coefficients and semimetallic to semiconducting transport properties. This makes them attractive for study as potential candidates for thermoelectric applications. In this study, trends in the thermoelectric power, electrical conductivity and thermal conductivity are examined as a function of chemical substitution on the various fcc sub-lattices that comprise the half-Heusler crystal structure. These results suggest that the lattice contribution to the thermal conductivity may be reduced by increasing the phonon scattering via chemical substitution. The effects of these substitutions on the overall power factor and figure-of-merit will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 403
Copyright
Copyright © Materials Research Society 1999

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