Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-12-01T01:50:00.388Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermodynamic Stability of Binary Oxides in Contact with Silicon

Published online by Cambridge University Press:  15 February 2011

K. J. Hubbard  and
D. G. Schloma
K. J. Hubbard
Affiliation:
The Pennsylvania State University, Department of Materials Science and Engineering, University Park, PA, 16802-5005, [email protected]
D. G. Schloma
Affiliation:
The Pennsylvania State University, Department of Materials Science and Engineering, University Park, PA, 16802-5005, [email protected]
Get access

Abstract

Using tabulated thermodynamic data, a comprehensive investigation of the thermodynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient thermodynamic data exists to conclude that all binary oxides except the following are unstable in contact with silicon at 1000 K: Li20, the alkaline earth oxides (BeO, MgO, CaO, SrO, and BaO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3 where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient thermodynamic data exists to conclude that BeO, MgO, CaO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 33
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fork, D. K. in Pulsed Laser Deposition of Thin Films, edited by Chrisey, D. B. and Hubler, G. K. (Wiley, New York, 1994), pp. 393–415.Google Scholar
2. Tarsa, E. J., McCormick, K. L., and Speck, J. S. in Epitaxial Oxide Thin Films and Heterostructures, edited by Fork, D. K., Phillips, J. M., Ramesh, R., and Wolf, R. M. (Mater. Res. Soc. Proc. 341, Pittsburgh, PA, 1994), pp. 73–85.Google Scholar
3. Phillips, J. M., MRS Bulletin 20, 35 (April 1995); J.M. Phillips, to be published in Processing and Properties of High Tc Superconductors, Volume 2: Thin Films, edited by S. Jin and D.K. Christen (World Scientific).Google Scholar
4. Hubbard, K. J. and Schlom, D. G. in: Structure and Properties of Interfaces in Ceramics, edited by Bonnell, D. A., Chowdhry, U., and Rühle, M., (Mater. Res. Soc. Proc. 357, Pittsburgh, PA, 1995), pp. 331–336.Google Scholar
5. Hubbard, K. J. and Schlom, D. G., to be published in J. Mater. Res.Google Scholar
6. CRC Handbook of Chemistry and Physics, 71st. ed. (CRC Press, Cleveland, Ohio, 1990/1991).Google Scholar
7. Fork, D. K., Fenner, D. B., and Geballe, T. H., J. Appl. Phys. 68, 4316 (1990).Google Scholar
8. Nagata, H., Yoshimoto, M., Tsukahara, T., Gonda, S., and Koinuma, H. in Evolution of Thin-Film and Surface Microstructure, edited by Thompson, C. V., Tsao, J. Y., and Srolovitz, D. J. (Mater. Res. Soc. Proc. 202, Pittsburgh, PA, 1991), pp. 445–450.Google Scholar
9. Nakamura, T., Nakao, Y., Kamisawa, A., and Takasu, H., Appl. Phys. Lett. 65, 1522 (1994); T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Jpn. J. Appl. Phys. 33, 5207 (1994).Google Scholar