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Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures

Published online by Cambridge University Press:  01 February 2011

Evan Pickett ,
Seth Bank ,
Homan Yuen ,
Hopil Bae ,
Tomás Sarmiento ,
Ann Marshall  and
James Harris
Evan Pickett
Affiliation:
[email protected], Stanford University, Materials Science, 126X CISX, Via Ortega, Stanford, CA, 94305, United States, 650-725-8313
Seth Bank
Affiliation:
[email protected], The University of Texas at Austin, Austin, TX, 78712, United States
Homan Yuen
Affiliation:
[email protected], Stanford University, Stanford, CA, 94305, United States
Hopil Bae
Affiliation:
[email protected], Stanford University, Stanford, CA, 94305, United States
Tomás Sarmiento
Affiliation:
[email protected], Stanford University, Stanford, CA, 94305, United States
Ann Marshall
Affiliation:
[email protected], Stanford University, Stanford, CA, 94305, United States
James Harris
Affiliation:
[email protected], Stanford University, Stanford, CA, 94305, United States
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Abstract

GaInNAsSb quantum wells with GaNAs barriers, grown via molecular beam epitaxy (MBE) on 100–oriented GaAs substrates at varying temperatures, were analyzed using photoluminescence (PL), high-resolution x-ray diffraction (XRD), transmission electron microscopy (TEM), and energy-dispersive spectrometry (EDS). Samples grown at 420 °C, 440 °C, and 470 °C were analyzed, as were two pieces of the 440 °C growth temperature sample that had been annealed at 740 °C and 820 °C.These measurements showed that the decrease in PL with higher growth temperatures was due to the onset of 3D growth and the nucleation of dislocations.The degradation associated with overannealing was likely due to dislocation nucleation.The poor PL associated with low growth temperatures was due to another mechanism, most likely arsenic anti-site defects.EDS measurements showed greater composition uniformity with lower growth temperatures, as expected, and also showed that there was no ordered indium-rich or indium-poor phase separation at any temperature.Phase separation upon annealing was not observed.

Keywords

molecular beam epitaxy (MBE)transmission electron microscopy (TEM)dislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F05-02
Copyright
Copyright © Materials Research Society 2007

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