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Theoretical energy yield of GaAs-on-Si tandem solar cells

Published online by Cambridge University Press:  13 February 2014

Haohui Liu
Affiliation:
Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, Singapore (117574) NUS Graduate School for Integrative Sciences & Engineering (NGS), 28 Medical Drive, Singapore (117456)
Zekun Ren
Affiliation:
Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, Singapore (138602)
Zhe Liu
Affiliation:
Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, Singapore (117574)
Riley E. Brandt
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, U.S.A
Jonathan P. Mailoa
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, U.S.A
Sin Cheng Siah
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, U.S.A
Armin G. Aberle
Affiliation:
Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, Singapore (117574)
Tonio Buonassisi
Affiliation:
Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, Singapore (138602) Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, U.S.A
Ian Marius Peters
Affiliation:
Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, Singapore (117574)
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Abstract

III-V on Si multijunction solar cells represent an alternative to traditional compound III-V multijunction cells as a promising way to achieve high efficiencies. A theoretical study on the energy yield of GaAs/Si tandem solar cells is performed to assess the performance potential and sensitivity to spectral variations. Recorded time-dependent spectral irradiance data in two locations (Singapore and Denver) were used. We found that a 4-terminal contact scheme with thick top cell confers distinctive advantages over a 2-terminal scheme, giving a yield potential 21% higher than the 2-terminal scheme in Singapore and 17% higher in Denver. The theoretical energy yield benefit of a 4-terminal device emphasizes the need for further technology development in this design space.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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